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    DIODE 4448 Search Results

    DIODE 4448 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ8V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 4448 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N4448

    Abstract: L4448
    Contextual Info: L L 4448 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the DO-35 case with the type designation 1N4448.


    Original     		DO-35 1N4448. OD-80) 100mA 150OC 100MHz, 1N4448 L4448 PDF

    Contextual Info: 1N 4448 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 100V Forward Current 150mA Features ‹ Silicon Epitaxial Planar Diode ‹ Fast switching diode ‹ This diode is also available in other case styles including the MiniMELF case with the type designation LL4448.


    Original     		150mA LL4448. DO-35 150OC 100uA 100MHz, PDF

    MINI-MELF DIODE BLACK CATHODE

    Abstract: F 407 Diode
    Contextual Info: L L 4448 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 100V Forward Current 150mA Features ‹ Silicon Epitaxial Planar Diode ‹ Fast switching diode in MiniMELF case especially suited for automatic insertion. ‹ This diode is also available in other case styles including the


    Original     		150mA DO-35 1N4448. OD-80C) 100mA 150OC 100MHz, MINI-MELF DIODE BLACK CATHODE F 407 Diode PDF

    1N4448

    Abstract: jy 1n4448 LL4448 MARK 1N p5001
    Contextual Info: 1N 4448 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode fast switching diode. max. 1.90 This diode is also available in MiniMELF case with type desigantion LL4448. Cathode M ark max. 0.520 Glass case JEDEC DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		LL4448. DO-35 1N4448 1N4448 jy 1n4448 LL4448 MARK 1N p5001 PDF

    Contextual Info: 1N 4448 Small-Si gnal D i ode Fast Swi tchi ng D i ode Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4448. Mechanical Data Case: DO-35 Glass Case


    Original     		LL4448. DO-35 500erwise 150OC 100uA 100MHz, PDF

    CDST-4448-G

    Contextual Info: SMD Switching Diode CDST-4448-G - High Speed RoHS Device + Features SOT-23 - Fast switching diode. 0.119 3.00 0.110 (2.80) - Surface mount package ideally suited for automatic insertion. - For general purpose switching applications. 3 0.056 (1.40) 0.047 (1.20)


    Original     		CDST-4448-G OT-23 MILSTD-750, QW-B0022 CDST-4448-G PDF

    1N 2002 diode

    Abstract: 1N4448 LL4448
    Contextual Info: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4448. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150


    Original     		1N4448 LL4448. 1N 2002 diode 1N4448 LL4448 PDF

    Contextual Info: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4448. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150


    Original     		1N4448 LL4448. Characte00 PDF

    1N 2002 diode

    Abstract: diode datasheet 4448 1N4448 LL4448
    Contextual Info: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4448. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150


    Original     		1N4448 LL4448. 1N 2002 diode diode datasheet 4448 1N4448 LL4448 PDF

    1N4448

    Abstract: LL4448
    Contextual Info: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast Switching Diode Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand This diode is also available in MiniMELF case with the type designation LL4448. XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35


    Original     		1N4448 LL4448. DO-35 1N4448 LL4448 PDF

    Contextual Info: Central IIV Sem i c o n d u c t o r C o r p . C M PD 4448 HIGH SPEED SWITCHING DIODE DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface


    OCR Scan     		CMPD4448 OT-23 100mA 100i2, PDF

    1N4448

    Abstract: LS4448 diode 4448
    Contextual Info: LS4448 SILICON EPITAXIAL PLANAR DIODE fast switching diode in QuadroMELF case especially LS-34 suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448. QuadroMELF Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter


    Original     		LS4448 LS-34 1N4448. 1N4448 LS4448 diode 4448 PDF

    Contextual Info: LL4448 SILICON EPITAXIAL PLANAR DIODE fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC


    Original     		LL4448 1N4448 PDF

    1N4448

    Abstract: LL4448
    Contextual Info: LL4448 SILICON EPITAXIAL PLANAR DIODE fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC


    Original     		LL4448 1N4448 1N4448 LL4448 PDF

    1N4448

    Abstract: LS4448
    Contextual Info: LS4448 SILICON EPITAXIAL PLANAR DIODE LS-34 fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC


    Original     		LS4448 LS-34 1N4448 1N4448 LS4448 PDF

    1N4448

    Abstract: LL4448
    Contextual Info: LL4448 SILICON EPITAXIAL PLANAR DIODE fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage


    Original     		LL4448 1N4448 1N4448 LL4448 PDF

    1N4448

    Abstract: LL4448
    Contextual Info: LL4448 SILICON EPITAXIAL PLANAR DIODE LL-34 Cathode band fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC


    Original     		LL4448 LL-34 1N4448 1N4448 LL4448 PDF

    1N4448

    Abstract: LL4448
    Contextual Info: LL4448 SILICON EPITAXIAL PLANAR DIODE LL-34 Cathode band fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC


    Original     		LL4448 LL-34 1N4448 1N4448 LL4448 PDF

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


    OCR Scan     		108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 PDF

    5KV fast recovery DIODE

    Abstract: 1N4448W
    Contextual Info: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot


    Original     		1N4448W OD-123 5KV fast recovery DIODE 1N4448W PDF

    1N4448W

    Abstract: 5KV fast recovery DIODE
    Contextual Info: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot


    Original     		1N4448W OD-123 1N4448W 5KV fast recovery DIODE PDF

    Contextual Info: IMBD4448 Small Signal Diodes FEATURES SOT-23 ♦ Silicon Epitaxial Planar Diodes ♦ Fast switching diode in case SOT-23, especially suited for autom atic insertion. ♦ • j| This diode is also available in other case :f styles including: the DO-35 case with the


    OCR Scan     		IMBD4448 OT-23 OT-23, DO-35 1N4448, LL4448, 1N4448W OT-23 PDF

    Contextual Info: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot


    Original     		1N4448W OD-123 PDF

    1N4448W

    Contextual Info: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot


    Original     		1N4448W OD-123 1N4448W PDF