silan
Abstract: No abstract text available
Text: 2KG048075PYL 2KG048075PYL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG048075PYL is a high speed switching diode chip fabricated in planar technology. Ø This chip has several thicknesses, can suit for different plastic package. The top electrodes material is Al, and
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2KG048075PYL
2KG048075PYL
2KG048XXX
silan
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Untitled
Abstract: No abstract text available
Text: 2KG048075NYL 2KG048075NYL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG048075NYL is a high speed switching diode chip fabricated in planar technology. Ø This chip has several thicknesses, can suit for different plastic package. The top electrodes material is Al, and
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2KG048075NYL
2KG048075NYL
2KG048XXX
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pin diode microstrip
Abstract: HSMP3814 HP 5082-3081 FR4 dielectric constant at 2.4 Ghz HSMP-3814 0805Z473M2P03 HSMP-3810 HSMP-3864 HSMP-386F HSMP-386X
Text: A Low-Cost Surface Mount PIN Diode π Attenuator Application Note 1048 Introduction Analog attenuators find wide application in RF and microwave networks. Realized as either GaAs MMICs or PIN diode networks, these circuits are used to set the power level of an RF signal from a
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5965-1237E
5966-0449E
pin diode microstrip
HSMP3814
HP 5082-3081
FR4 dielectric constant at 2.4 Ghz
HSMP-3814
0805Z473M2P03
HSMP-3810
HSMP-3864
HSMP-386F
HSMP-386X
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HP 5082-3081
Abstract: Microwave PIN diode 3810 CR21-162JB1 FR4 dielectric constant vs temperature loss tangent of teflon hsmp3810 HP-5082-3081 HSMP-3814 HSMP-3810 KYOCERA RESISTOR NETWORKS
Text: A Low-Cost Surface Mount PIN Diode π Attenuator Application Note 1048 Introduction Analog attenuators find wide application in RF and microwave networks. Realized as either GaAs MMICs or PIN diode networks, these circuits are used to set the power level of an RF signal from a
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HP 5082-3081
Abstract: HSMP-3814 avago 5188 hsmp3814 HSMP-386x Series KYOCERA RESISTOR NETWORKS mcr10ezhj222 "Common rail" HSMP-38 sot-323 CR21
Text: A Low-Cost Surface Mount PIN Diode π Attenuator Application Note 1048 Introduction Background Analog attenuators find wide application in RF and microwave networks. Realized as either GaAs MMICs or PIN diode networks, these circuits are used to set the power level of an RF signal from a voltage control. In
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5966-0449E
HP 5082-3081
HSMP-3814
avago 5188
hsmp3814
HSMP-386x Series
KYOCERA RESISTOR NETWORKS
mcr10ezhj222
"Common rail"
HSMP-38 sot-323
CR21
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APSC04-41VGKWA
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY APSC04-41VGKWA GREEN Features Description !0.4INCH The Green source color devices are made with DIGIT HEIGHT. !LOW CURRENT OPERATION. !EXCELLENT InGaN on SiC Light Emitting Diode. CHARACTER APPEARANCE. !I.C. COMPATIBLE !MECHANICALLY RUGGED.
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APSC04-41VGKWA
800PCS
DSAB3035
DEC/09/2002
APSC04-41VGKWA
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APDC04-41VGKWA
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY APDC04-41VGKWA GREEN Features Description !0.4INCH The Green source color devices are made with InGaN DIGIT HEIGHT. !LOW CURRENT OPERATION. !EXCELLENT on SiC Light Emitting Diode. CHARACTER APPEARANCE. !I.C. COMPATIBLE !MECHANICALLY RUGGED.
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APDC04-41VGKWA
500PCS/REEL.
DSAC1688
DEC/15/2002
APDC04-41VGKWA
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APDA04-41VGKWA
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY APDA04-41VGKWA GREEN Features Description !0.4INCH The Green source color devices are made with InGaN DIGIT HEIGHT. !LOW CURRENT OPERATION. !EXCELLENT on SiC Light Emitting Diode. CHARACTER APPEARANCE. !I.C. COMPATIBLE. !MECHANICALLY RUGGED.
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APDA04-41VGKWA
500PCS/REEL.
DSAC1663
DEC/14/2002
APDA04-41VGKWA
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APSA04-41VGKWA
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY APSA04-41VGKWA GREEN Features Description !0.4INCH The Green source color devices are made with DIGIT HEIGHT. !LOW CURRENT OPERATION. !EXCELLENT InGaN on SiC Light Emitting Diode. CHARACTER APPEARANCE. !I.C. COMPATIBLE !MECHANICALLY RUGGED.
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APSA04-41VGKWA
800PCS
DSAB3022
DEC/09/2002
APSA04-41VGKWA
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY KPSA04-121 GREEN Features Description !0.4INCH The Green source color devices are made with DIGIT HEIGHT. !LOW CURRENT OPERATION. !EXCELLENT InGaN on SiC Light Emitting Diode. CHARACTER APPEARANCE. !I.C. COMPATIBLE !MECHANICALLY RUGGED.
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KPSA04-121
800PCS
DSAD0202
DEC/28/2002
KPSA04-121
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY KPDC04-121 GREEN Features Description !0.4INCH The Green source color devices are made with InGaN DIGIT HEIGHT. !LOW CURRENT OPERATION. !EXCELLENT on SiC Light Emitting Diode. CHARACTER APPEARANCE. !I.C. COMPATIBLE !MECHANICALLY RUGGED.
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KPDC04-121
500PCS/REEL.
DSAD0159
DEC/28/2002
KPDC04-121
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY KPSC04-121 GREEN Features Description !0.4INCH The Green source color devices are made with DIGIT HEIGHT. !LOW CURRENT OPERATION. !EXCELLENT InGaN on SiC Light Emitting Diode. CHARACTER APPEARANCE. !I.C. COMPATIBLE !MECHANICALLY RUGGED.
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KPSC04-121
800PCS
DSAD0205
DEC/28/2002
KPSC04-121
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Untitled
Abstract: No abstract text available
Text: 7.62mm 0.3INCH SINGLE DIGIT NUMERIC DISPLAY Part Number: SA03-11SURKWA Features Hyper Red Description 0.3 inch digit height. The Hyper Red source color devices are made with Excellent character appearance. AlGaInP on GaAs substrate Light Emitting Diode.
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SA03-11SURKWA
DSAF6214
SEP/23/2010
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY ATTENTION APDA04-41VGKWA GREEN OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description 0.4INCH DIGIT HEIGHT. The Green source color devices are made with InGaN LOW CURRENT OPERATION. on SiC Light Emitting Diode.
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APDA04-41VGKWA
500PCS/
DSAC1663
JAN/05/2005
APDA04-41VGKWA
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SA03-11SURKWA
Abstract: No abstract text available
Text: 7.62mm 0.3INCH SINGLE DIGIT NUMERIC DISPLAY Part Number: SA03-11SURKWA Hyper Red Features Description z 0.3 inch digit height. The Hyper Red source color devices are made with z Excellent character appearance. AlGaInP on GaAs substrate Light Emitting Diode.
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SA03-11SURKWA
DSAF6214
MAY/13/2010
SA03-11SURKWA
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ACSA08-51SURKWA
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY Part Number: ACSA08-51SURKWA Hyper Red Features Description z 0.8 inch digit height. The Hyper Red source color devices are made with Al- z Low current operation. GaInP on GaAs substrate Light Emitting Diode. z Excellent character appearance.
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ACSA08-51SURKWA
200pcs/
DSAG8876
MAR/22/2011
ACSA08-51SURKWA
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A2151
Abstract: No abstract text available
Text: EFC6601R Ordering number : ENA2151 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC6601R Lithium-ion battery charging and discharging switch Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance
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ENA2151
EFC6601R
PW10s,
5000mm2
A2151-8/8
A2151
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A2151
Abstract: data A2151 EFC6601R-TR Sanyo battery a215-15 ENA2151A EFCP2718-6CE-020
Text: EFC6601R Ordering number : ENA2151A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC6601R Lithium-ion battery charging and discharging switch Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance
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ENA2151A
EFC6601R
PW10s,
5000mm2
A2151-8/8
A2151
data A2151
EFC6601R-TR
Sanyo battery
a215-15
ENA2151A
EFCP2718-6CE-020
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY Part Number: ACSA08-51SURKWA Hyper Red Features Description z 0.8 inch digit height. The Hyper Red source color devices are made with Al- z Low current operation. GaInP on GaAs substrate Light Emitting Diode. z Excellent character appearance.
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ACSA08-51SURKWA
200pcs/
APR/11/2013
DSAG8876
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Untitled
Abstract: No abstract text available
Text: 7.62mm 0.3INCH DUAL DIGIT NUMERIC DISPLAY Part Number: DC03-11SURKWA Hyper Red Description Features 0.3 inch digit height. The Hyper Red source color devices are made with Al- Low current operation. GaInP on GaAs substrate Light Emitting Diode. Excellent character appearance.
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DC03-11SURKWA
DSAK2763
SEP/24/2010
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Untitled
Abstract: No abstract text available
Text: 7.62mm 0.3INCH SINGLE DIGIT NUMERIC DISPLAY Part Number: SC03-12SURKWA Features Hyper Red Description 0.3 inch digit height. The Hyper Red source color devices are made with Low current operation. AlGaInP on GaAs substrate Light Emitting Diode. Excellent character appearance.
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SC03-12SURKWA
DSAK7012
DA185
SEP/23/2010
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Untitled
Abstract: No abstract text available
Text: 7.62mm 0.3INCH DUAL DIGIT NUMERIC DISPLAY Part Number: DA03-11SURKWA Hyper Red Description Features 0.3 inch digit height. The Hyper Red source color devices are made with Al- Low current operation. GaInP on GaAs substrate Light Emitting Diode. Excellent character appearance.
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DA03-11SURKWA
prio185
DSAA7698
SEP/07/2010
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Untitled
Abstract: No abstract text available
Text: EFC6601R Ordering number : ENA2151A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC6601R Lithium-ion battery charging and discharging switch Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance
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EFC6601R
ENA2151A
5000mm.
A2151-8/8
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ACSC08-51SURKWA
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY Part Number: ACSC08-51SURKWA Hyper Red Features Description z 0.8 inch digit height. The Hyper Red source color devices are made with Al- z Low current operation. GaInP on GaAs substrate Light Emitting Diode. z Excellent character appearance.
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ACSC08-51SURKWA
200pcs/
DSAG8881
MAR/23/2011
ACSC08-51SURKWA
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