DIODE 47V 4A Search Results

colour code diode zener

Abstract: BAR99 s790 FMMD6050 ZC830 diode marking code W5 diode marking x6 SOT-23 MARKING w5 W9 diode ZC830B
Contextual Info: H D 2A I FERRANTI HD3A nr 11semiconductors L H D 4A High Speed S w itching Diodes D ES C R IPTIO N These devices applications. are intend ed fo r high speed s w itch ing * Encapsulated in th e popular SOT-23 p ackage th e device is designed specifically fo r use in thin and th ic k film hybrid

zener diode marking E7

Abstract: diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Typ e Device Typ e Device m arking Device m arking BA L99 E2 B Z X 84-C 4 3 X6 B A R 99 E3 B Z X 84-C 47 X7 B A S 16 A3 FM M D 914 5D B A V 70 A4 FM M D 6050 5A B A V 74

ZC832A

Abstract: FMMD914 ZC830A ZC831A ZC833A ZC834A ZC835A ZC836A ZC836B ferranti
Contextual Info: i FERRANTI semiconductors ZC830A Series Silicon Variable Capacitance Diodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­

FMMD6050

Abstract: Q953 diode marking code YF Z6 DIODE BAL99 BAR99 BAS16 BAV70 BZX84-C43 BZX84-C47
Contextual Info: FERRANTI 4 semiconductors FMMD6050 • High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid

FMMD6050

Abstract: E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAL99 BAS16 SOT diode marking Z3 BAV74
Contextual Info: FERRANTI semiconductors BAL99 High Speed S w itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

MARKING YA SOT-23

Abstract: w56 transistor MARKING YA J3 SOT-23 ZC831 sot-23 marking YA Diode Marking z3 SOT-23 DIODE W7 BZX84C12 BAR99 BAS16
Contextual Info: I FERRANTI T IIsemiconductorsL BAW56 High Speed S w itc h in g D iode Pair C om m on A node DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in th in and th ick fiiim

BAV99 Zener diode

Abstract: Diode Marking z3 SOT-23 marking code J1 sot23 transistors bav99 BAV99a7 Marking c9 SOT23 marking w7 sot-23 BAL99 BAV70 BAV74
Contextual Info: FERRANTI semiconductors BAV99 Hi gh Speed S w i t c h i n g Series D io de Pair DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

C6V2 ST

Abstract: FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BAV74 BZX84-C43
Contextual Info: FERRANTI semiconductors BAV74 High Speed S w itc h in g Diode Pair Comrhon Cathode DESCRIPTION These devices are intended fo r high speed sw itching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

5D marking DIODE BAS16

Abstract: Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23
Contextual Info: FERRANTI i semiconductors BAS16 High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid

FMMD914

Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Contextual Info: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film

Diode Marking z3 SOT-23

Abstract: dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23
Contextual Info: FERRANTI i semiconductors ZC830A Series S ilic o n Variable C ap a citan ce D iodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

Diode Marking z3 SOT-23

Abstract: BAR99 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99
Contextual Info: * FERRANTI semiconductors BAR99 High Speed Sw itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

lt 5240

Abstract: GPS05094
Contextual Info: Addendum for PCN 2004-018-A BTS 5240 G Addendum for PCN-Datasheet 2004-018-A: BTS 5240 G This Addendum and PCN-Datasheet refers to the PCN 2004-018-A: “Minor datasheet adaption for BTS 5240 L, BTS 5240 G, BTS 5440 G “. The PCN-datasheet attached will be valid starting from August 2004.

lt 5240

Abstract: BTS 5240 L Q67060-S6135
Contextual Info: Addendum for PCN 2004-018-A BTS 5240 L Addendum for PCN-Datasheet 2004-018-A: BTS 5240 L This Addendum and PCN-Datasheet refers to the PCN 2004-018-A: “Minor datasheet adaption for BTS 5240 L, BTS 5240 G, BTS 5440 G “. The PCN-datasheet attached will be valid starting from August 2004.

5240G

Contextual Info: BTS 5240G Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 5.9

GPS05094

Contextual Info: BTS 5240G Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 5.9

Q67060-S6136

Abstract: BTS5440G
Contextual Info: BTS 5440G Smart High-Side Power Switch Four Channels: 4 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one four parallel On-state resistance RON 25 6.5 Nominal load current IL(nom) 6.2

Contextual Info: BTS 5440G Smart High-Side Power Switch Four Channels: 4 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one four parallel On-state resistance RON 25 6.5 Nominal load current IL(nom) 6.2

Contextual Info: BTS 5240L Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage Vbb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 6

Contextual Info: BTS 5240L Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 6

Contextual Info: BTS 5440G Smart High-Side Power Switch Four Channels: 4 x 25mΩ IntelliSense Package Product Summary Operating voltage Vbb on 4,5.28 V ( Loaddump: 40 V ) Active channels one four parallel On-state resistance RON 25 6.5 Nominal load current IL(nom) 6.2

Contextual Info: BTS 5240L Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 6

INFINEON PART MARKING BTS

Abstract: SCR gate Control IC GPS05094
Contextual Info: BTS 5240G Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Product Summary Operating voltage Package V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 5.9