DIODE 4A 400V Search Results

TSC5304D

Abstract: power transistor Ic 4A NPN to - 251 TSC5304DCH TSC5304DCP TS530 NPN Transistor 10A 400V TSC5304 ic 565 pin diagram
Contextual Info: Preliminary TSC5304D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 4A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti

marking c08

Abstract: C08 marking 250V transistor npn 2a BM 0228 marking code C5 power transistor Ic 4A NPN to - 251 1A MARKING CODE C5 MARKING TRANSISTOR marking code B2 NPN Silicon Power Transistor DPAK
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

TSC5304D

Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

TP 1078

Abstract: transistor 926
Contextual Info: TSC128D High Voltage NPN Transistor with Diode TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter TO-263 2 D PAK PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

Contextual Info: 1 2 D2PAK TO-220 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 1 2 APT4SC60K APT4SC60SA 600V 600V 4A 4A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly

pin diagram of ic 4440

Abstract: IC 0116 DC TSC5305D TSC5305DCM TSC5305DCZ ic 4440 transistor Vceo 400V, Vebo 9v, Ic 10A
Contextual Info: Preliminary TSC5305D High Voltage NPN Transistor with Diode TO-263 Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 5A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti

tyco igbt 6a

Contextual Info: Targetdatasheet flow PIM 0+P, 600V, 4A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Diode Inverter Diode Wechselrichter DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom

5210 diode

Abstract: NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 2.5A / 0.5A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

TSC5304ED

Abstract: power transistor Ic 4A NPN to - 251 TSC5304EDCP transistor c10 TO-252 marking C10 marking C10
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC 4A VCE(SAT) Features ● 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

ILA03N60

Abstract: ILB03N60 Q67040-S4627 SDP04S60 Infineon MOSFET 1000V
Contextual Info: ILB03N60 ^ LightMOS Power Transistor C • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET

ILA03N60

Abstract: ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628
Contextual Info: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET

Q67040-S4628

Abstract: ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration
Contextual Info: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET

L03N60

Abstract: PG-TO220-3-31 TRANSISTOR SMD MARKING CODE 1v mj 4043 Infineon MOSFET 1000V MS 25231 LAMP RG80 PG-TO-220-3-31 PG-TO25
Contextual Info: ILA03N60, ILP03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET

TO220I

Abstract: diode 400v 2A ultrafast STTH806TTI
Contextual Info: STTH806TTI TURBOSWITCH Tandem 600V ULTRAFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600 V (in series) VF (max) 2.6 V IRM (typ.) 4A 1 2 3 FEATURES AND BENEFITS 1 ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING

SHINDENGEN DIODE

Contextual Info: Super Fast Recovery Diode Single Diode UHM' vi& E l OUTLINE DIMENSIONS D4L40 Case : ITO-220 ' 400V 4A •ffiy -r x # trr5 0 n s 0.7 •S R C Ü • 7U • * « . OA, p.?« •an. a « , fa • Ê të ft RATINGS A bsolute M ax im u m Ratings m S ym bol m & tft

STTH806DTI

Contextual Info: STTH806DTI Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600 V Tj (max) 150 °C VF (max) 2.4 V IRM (typ.) 4A trr (typ.) 13 ns 1 2 2 1 FEATURES AND BENEFITS • ■ ■ ■ ■ ■ Insulated TO-220AB ESPECIALLY SUITED AS BOOST DIODE IN

JESD97

Abstract: STTH806DTI
Contextual Info: STTH806DTI Tandem 600 V hyperfast boost diode Table 1. Main product characteristics IF AV 8A VRRM 600 V Tj (max) 150° C VF (max) 2.24 V IRM (typ.) 4A trr (typ.) 13 ns 1 2 2 1 Insulated TO-220AC Features and benefits • Especially suited as boost diode in continuous

Contextual Info: STTH806DTI Tandem 600 V hyperfast boost diode Table 1. Main product characteristics IF AV 8A VRRM 600 V Tj (max) 150° C VF (max) 2.24 V IRM (typ.) 4A trr (typ.) 13 ns 1 2 2 1 Insulated TO-220AC Features and benefits • Especially suited as boost diode in continuous

D4L40

Contextual Info: □ — n ^ S T -T * — K m tm . Super Fast Recovery Diode Single Diode O U T L IN E D IM E N S IO N S D4L40 400V 4A • fctem R A T IN G S Absolute Maximum Ratings s m Item Symbol un&m it- ~-— O perating J u n c tio n Tem perature Maximum Reverse Voltage

CSD04060

Abstract: CSD04060A SCHOTTKY 4A 600V CSD04060B CSD04060E
Contextual Info: CSD04060 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=600V IF=4A _ Features Benefits • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery

STTH806DTI

Contextual Info: STTH806DTI Tandem 600V HYPERFAST BOOST DIODE MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 600 V Tj 150°C VF (typ) 2.24 V IRM typ.) 4A trr (max) 13 ns 1 2 1 FEATURES AND BENEFITS • ■ ■ ■ ■ ■ Especially suited as boost diode in continuous mode power factor correctors and hard

Contextual Info: CSD04060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 4A Qc = 9 Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

STTH806TTI

Contextual Info: STTH806TTI TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600 V (in series) Tj (max) 150 °C VF (max) 2.6 V IRM (typ.) 4A 1 2 3 1 • ■ ■ ■ ■ 3 Insulated TO-220AB FEATURES AND BENEFITS ■ 2 ESPECIALLY SUITED AS BOOST DIODE IN