DIODE 4A 400V ULTRA FAST Search Results

Contextual Info: FFPF04U40DP FFPF04U40DP Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F 1 2 3 1. Cathode 2.Anode 3. Cathode ULTRA FAST RECOVERY POWER RECTIFIER

Contextual Info: FFP04U40DN FFP04U40DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER

Contextual Info: FFPF04U40DN FFPF04U40DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER

FDPF5n50u

Abstract: diode 4A 400v ultra fast
Contextual Info: FDPF5N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 4 A, 2.0  Features Description • RDS on = 1.65  (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

diode 400V 4A

Abstract: diode 4A 400v ultra fast ICE 280 IRF1010 TRANSISTOR BIPOLAR 400V 20A
Contextual Info: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97072 IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

diode 400V 4A

Abstract: IRF1010 diode 4A 400v ultra fast
Contextual Info: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

APT8M80K

Abstract: MIC4452
Contextual Info: APT8M80K 800V, 8A, 1.35Ω MAX, N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT8M80K 800V, 8A, 1.35Ω MAX, N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT8M80K

Abstract: MIC4452
Contextual Info: APT8M80K 800V, 8A, 1.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

fdpf10n50

Abstract: diode 4A 400v ultra fast FDPF10N50U Ultra Low voltage rds mosfet FDPF10N50UT
Contextual Info: FDPF10N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 8 A, 1.05  Features Description • RDS on = 850 m ( Typ.) @ VGS = 10 V, ID = 4 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

smps with uc3842 and tl431

Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
Contextual Info: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES

07N65

Abstract: fusible 1a SMD LN4148 10471 VARISTOR
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT51X Rev 1.5 Oct 2012 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 4,6,8,10,12,14,16,18,20,22,24 2012-Oct– 19

FDPF5n50u

Abstract: diode 4A 400v ultra fast N-channel 500V mosfet
Contextual Info: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF5N50UT

Abstract: FDPF5n50u FDP5N50U
Contextual Info: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: FDPF8N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 6.5 A, 1.2 Ω Features RDS on = 1.0 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A • • • • • • • Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 5 pF) 100% Avalanche Tested Improved dv/dt Capability

STTH806TTI

Contextual Info: STTH806TTI TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600 V (in series) Tj (max) 150 °C VF (max) 2.6 V IRM (typ.) 4A 1 2 3 1 • ■ ■ ■ ■ 3 Insulated TO-220AB FEATURES AND BENEFITS ■ 2 ESPECIALLY SUITED AS BOOST DIODE IN

STTH806TTI

Contextual Info: STTH806TTI TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600 V (in series) Tj (max) 150 °C VF (max) 2.6 V IRM (typ.) 4A 1 2 3 1 2 3 Insulated TO-220AB FEATURES AND BENEFITS DESCRIPTION The TURBOSWITCH "H" is an ultra high

Contextual Info: FDP8N50NZU / FDPF8N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 6.5 A, 1.2 Ω Features Description • R UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state

FDPF8N50

Abstract: FDPF8N50NZU FDP8N50NZU
Contextual Info: FDP8N50NZU / FDPF8N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 6.5 A, 1.2 Ω Features Description • R UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state

morocco L3

Abstract: STTH806TTI
Contextual Info: 2001-08-17 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-289-62 STTH806TTI tandem diod STTH806TTI TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS

Contextual Info: APT7F80K 800V, 7A, 1.50Ω MAX,TRR ≤ 160nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

7A, 100v fast recovery diode

Contextual Info: APT7F80K 800V, 7A, 1.50Ω MAX,TRR ≤ 160nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft