DIODE 512 Search Results

zd1 1014

Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky

transistor R1d

Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener

Diode Motorola 711 2N2905A

Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

LDTC0520

Abstract: WTC3243 PLD10K-CH WLD3343 cables WHY5690 PLD-10 laser diode driver 200 mhz Quantum cascade laser PID1500
Contextual Info: Quantum Cascade & Laser Diode Drivers & Temperature Controllers TEMPERATURE CONTROL DUAL LASER DRIVER QCL MODEL NUMBER QCL Series Quantum Cascade Laser Drivers Chassis Mount PLD-CH Series Laser Diode Drivers PLD PCB Series Laser Diode Drivers WLD3343 Series Laser Diode Drivers &

Contextual Info: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

RHR15120

Abstract: RHR15120 fairchild make DIODE RHR15120 RHR15120 datasheet RHRP15120 TA49098
Contextual Info: RHRP15120 Data Sheet January 2000 File Number 3677.2 15A, 1200V Hyperfast Diode Features Title HR 512 The RHRP15120 is a hyperfast diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

RURG75120

Contextual Info: RURG75120 Data Sheet January 2000 File Number 3412.3 75A, 1200V Ultrafast Diode Features Title UR 512 The RURG75120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

39016

Abstract: To5 transistor header RELAY SPDT to-5 TRANSISTOR 287 A transistor x1 28776
Contextual Info: 1MA 1MAD 1MADD 1MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ 1MA 1MAD 1MADD 1MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE

Transistor 187 terminal configuration

Contextual Info: 1MA 1MAD 1MADD 1MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ 1MA 1MAD 1MADD 1MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE

tyco mil relay

Abstract: To5 transistor header Transistor 187 terminal configuration Mil-R-39016 TRANSISTOR 287 A
Contextual Info: 1MA 1MAD 1MADD 1MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ 1MA 1MAD 1MADD 1MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE

1842m

Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
Contextual Info: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser

DIODE 4d

Abstract: LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P
Contextual Info: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser

A 3150 igbt driver

Abstract: IR E78996 IRF E78996 ECONO2-6PACK IGBT module ir igbt 1200V 40A igbt qualification circuit E78996 IR GB25XF120K
Contextual Info: PD - 94569 GB25XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient

RHRG75120

Contextual Info: RHRG75120 Data Sheet Title HR 512 bt A, 00V pert ode utho eyrds A, 00V pert ode, errpoon, minctor, ache ergy ted, itch wer pes, wer itch January 2000 File Number 3414.3 75A, 1200V Hyperfast Diode Features The RHRG75120 is a hyperfast diode with soft recovery

nec d 588

Abstract: PX10160E
Contextual Info: DATA SHEET LASER DIODE NX8517XC Series 1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8517XC is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical

NDG4216

Abstract: nichia laser diode UTZ-SC0340 Nichia laser
Contextual Info: [ UTZ-SC0340_1 ] 2013/01/09 Green Laser Diode NDG4216 Features Outline Dimension • Peak Wavelength: 515nm Unit mm ( + .03 6 5. 1. 6) Φ °C) • Optical Output Power: CW 80mW (@Tc=25° • Can Type: φ 5.6 mm Floating Mounted with Photo Diode and Zener Diode

NX7314UA

Abstract: NX7315UA NX7312UA NX7313UA NX8310UA NX8311UD NX8510UD STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8510UD Series 1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8510UD is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

RURG15120CC

Abstract: URG15120C
Contextual Info: RURG15120CC Data Sheet Title UR 512 C bt A, 00V rafa Dual ode) utho eyrds A, 00V rafa Dual ode, errpoon, minctor, ache ergy ted, itch wer pes, wer itch January 2000 File Number 3695.2 15A, 1200V Ultrafast Dual Diode Features The RURG15120CC is an ultrafast dual diode with soft

80mw laser diode

Contextual Info: [ UTZ-SC0340_1 ] 2013/01/09 Green Laser Diode NDG4216   Features Outline Dimension • Peak Wavelength: 515nm Unit mm ( + .03 6 5. 1. 6 ) Φ • Optical Output Power: CW 80mW (@Tc=25C) • Can Type: 5.6 mm Floating Mounted with Photo Diode and Zener Diode

BFY 99

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8508 BFY10
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8508 Series 1 470 TO 1 610 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s, CWDM DESCRIPTION The NX8508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial module with an

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair