DIODE 518 Search Results

hc4-dc12v

Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
Contextual Info: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,

Contextual Info: JANUARY 1996 DSF21035SV ADVANCE ENGINEERING DATA DS4176-1.3 DSF21035SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers. FEATURES

DS4231

Contextual Info: M ITEL DSF21060SV Fast Recovery Diode SEMICONDUCTOR Supersedes O ctober 1995 version, DS4231 - 2.2 DS4231 - 2.3 APPLICATIONS • Freewheel Diode. ■ A ntiparallel Diode. ■ Inverters. ■ C hoppers. March 1998 KEY PARAMETERS v RRM 6000V 1690A J f AV

em 518 diode

Abstract: em 513 diode diode em 513 diode 1600 rectifier
Contextual Info: EM 513, EM 516, EM 518 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A

Contextual Info: SEPTEMBER 1996 DSF20060SF ADVANCE ENGINEERING DATA DS4218-3.3 DSF20060SF FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs • Inverters. ■ Choppers. ■ Inverse Parallel Diode. ■ Freewheel Diode. FEATURES

78996

Abstract: ci 4538 12v to 220 v ac inverter IC 4538 IC td 4538 GB15RF120K application of IC 4538
Contextual Info: PD - 94571 GB15RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics

GB25RF120K

Contextual Info: PD - 94552 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics

LIC AGENTS DATA

Contextual Info: @ M ITEL DSF21035SV Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4176 - 1.3 DS4176 - 1 .4 APPLICATIONS • KEY PARAMETERS v RRM 3500V 3000A Jf A V 20000A FSM 1500(lC Qr 6.0|is trr Freewheel Diode. ■ Antiparallel Diode. ■ March 1998

TIC 2460

Abstract: LIC AGENTS DATA
Contextual Info: @ M ITEL DSF21060SV Fast Recovery Diode SEMICONDUCTOR Supersedes O ctober 1995 version, DS4231 - 2.2 DS4231 - 2.3 APPLICATIONS • KEY PARAMETERS v RRM 6000V 1690A Jf A V 16000A FSM 1200(lC Qr 6.5|is trr Freewheel Diode. ■ Antiparallel Diode. ■ March 1998

Contextual Info: M ITEL DSF21035SV Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4176 - 1.3 D S 4 1 7 6 -1 .4 APPLICATIONS • Freewheel Diode. ■ A ntiparallel Diode. ■ Inverters. ■ C hoppers. March 1998 KEY PARAMETERS v RRM 3500V 3000A Jf AV

792gb170

Abstract: semikron skiip 30 SemiSel 792GB170-373CTV
Contextual Info: SKiiP 792GB170-373CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

Contextual Info: SË GEC P L E S S E Y JANUARY 1996 SEMI CO NDUC TOR S DS4176-1.3 DSF21035SV FAST RECOVERY DIODE KEY PARAMETERS V RRM 3500V 3000A Jf av 20000A FSM 1500jiC Qr 6.0|is *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.

NDG4216

Abstract: nichia laser diode UTZ-SC0340 Nichia laser
Contextual Info: [ UTZ-SC0340_1 ] 2013/01/09 Green Laser Diode NDG4216 Features Outline Dimension • Peak Wavelength: 515nm Unit mm ( + .03 6 5. 1. 6) Φ °C) • Optical Output Power: CW 80mW (@Tc=25° • Can Type: φ 5.6 mm Floating Mounted with Photo Diode and Zener Diode

80mw laser diode

Contextual Info: [ UTZ-SC0340_1 ] 2013/01/09 Green Laser Diode NDG4216   Features Outline Dimension • Peak Wavelength: 515nm Unit mm ( + .03 6 5. 1. 6 ) Φ • Optical Output Power: CW 80mW (@Tc=25C) • Can Type: 5.6 mm Floating Mounted with Photo Diode and Zener Diode

Contextual Info: Data Sheet 4W 940nm Uncooled Multimode Laser Diode Module MU4-940-01 The Bookham MU4-940 multimode laser diode module has been designed to provide the high power and reliability required for pumping next generation high power amplifiers for CaTV and FTTx The pump module includes a multimode laser diode

7030a

Abstract: light sensitive photo diode MTD7030A MTE1050A MTE1100 cms diode diode 518
Contextual Info: MARKTECH INTERNATIONAL lflE D • 571*1^55 GQOGBT? Q ■ PHOTO DIODE MTD7030A "T-MI-S3 SILICON PIN PHOTO DIODE ' CATHODE INDEX D — - E H M Tt 7030A is a high sensitive and high speed photo diode with PIN structure. Employment of filtered mold resin for cutting the visible light are suitable for the detectors of

Contextual Info: MARKTECH INTE RNATIONAL lflE D • 571*1^55 GQOGBT? Q ■ PHOTO DIODE MTD7030A T Ml-S 3 SILICON PIN PHOTO DIODE ' CATHODE INDEX D- E- TT MTt 7030A is a high sensitive and high speed photo diode with PIN structure. Employment of filtered mold resin for cutting the visible light are suitable for the detectors of

Contextual Info: ÜË GEC P L E S S E Y o c t o b e r 1995 SE M IC OND UC TOR S DS4231 -2.2 DSF21060SV FAST RECOVERY DIODE KEY PARAMETERS vR R M 6000V 1690A | A V 16000A FSM 1200(lC Q r 6 .5]lls *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ f Inverters.

Contextual Info: Photo Diode Product No: MTD5052W Peak Sensitivity Wavelength: 525nm Visible Photo Diode enhanced for the Blue/Green Spectrum FEATURES APPLICATIONS > Hermetically Sealed TO-18 > Optical Analytics > Gold Plated Flat Top Can > Optical Switches > High Reliability

australia heat sink

Abstract: Industrial Microphotonics Company ARR04P3600
Contextual Info: Industrial Microphotonics Company 3600W QCW Laser Diode Array Part Number: ARR04P3600 Z PACKAGE • Packaged 72 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS

Contextual Info: Photo Diode Product No: MTD5052N Peak Sensitivity Wavelength: 525nm Visible Photo Diode enhanced for the Blue/Green Spectrum FEATURES APPLICATIONS > Hermetically Sealed TO-18 > Optical Analytics > Gold Plated Dome Lens Can > Optical Switches > High Reliability

3200W

Abstract: australia heat sink ARR04P3200
Contextual Info: Industrial Microphotonics Company 3200W QCW Laser Diode Array Part Number: ARR04P3200 Z PACKAGE • Packaged 72 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER

Contextual Info: @ M ITEL DS402ST Rectifier Diode SEMICONDUCTOR Supersedes August 1995 version, DS4183 - 2.2 DS4183 - 2.3 March 1998 KEY PARAMETERS v RRM 1400V 505A Jf AV 5600A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.

Contextual Info: DS502ST M ITEL Rectifier Diode SEMICONDUCTOR Supersedes Novem ber 1997 version, DS4794 - 2.3 DS4794 - 2.4 March 1998 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. KEY PARAMETERS v RRM 1400V 540A Jf AV 8000A