DIODE 531 Search Results
DIODE 531 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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CUZ8V2 |
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Zener Diode, 8.2 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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MUZ5V6 |
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Zener Diode, 5.6 V, USM |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC |
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DIODE 531 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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laser transmitter circuit diagram
Abstract: Laser Diode 10 pin 1300 laser diode rise time 780nm laser diode module laser diode 2 Wavelength Laser Diode 6 pin laser diode 780nm laser diode 8 mW 780NM Laser-Diode apc be 500 ups
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531Mbps 1062Mbps 622Mbps 250ps MAX3261CCJ MAX3261C/D 21-0054B laser transmitter circuit diagram Laser Diode 10 pin 1300 laser diode rise time 780nm laser diode module laser diode 2 Wavelength Laser Diode 6 pin laser diode 780nm laser diode 8 mW 780NM Laser-Diode apc be 500 ups | |
laser driver TTL circuits
Abstract: 4023N 6 pin laser diode automatic laser power control MAX3261 MAX3261CCJ MAX3261ECJ 4015N MAX3261-FG07
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25Gbps 531Mbps 1062Mbps 250ps MAX3261CCJ MAX3261ECJ MAX3261E/D laser driver TTL circuits 4023N 6 pin laser diode automatic laser power control MAX3261 MAX3261CCJ MAX3261ECJ 4015N MAX3261-FG07 | |
triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
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1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC | |
BY588Contextual Info: {[ N AMER P H I L I P S / D I S C R E T E SSE D • ^53131 - Q01t71t 2 BY588 T - û i- ie r BASE-EMITTER EFFICIENCY DIODE Solid-glass passivated rectifier diode in a hermetically sealed axial-leaded glass envelope. T he device is intended fo r use as efficiency diode in horizontal deflection circuits between base and em itter terminals |
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bbS3T31 0Qlb71b BY588 OD-57. 0aib71& 7Z88947 BY588 | |
Z6 DIODE
Abstract: BZX84C27 BZX84C30 BZX84C33 BZX84C36 BZX84C39 BZX84C43 BZX84C47 BZX84C4V7 BZX84C51
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1N4148WSContextual Info: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C |
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1N4148WS= 1N4148WS | |
BA221
Abstract: ba221 d BB533
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Q02bim BA221 DO-35 DO-35 BA221 ba221 d BB533 | |
DL-3147-161Contextual Info: Ordering number : EN5864 Red Laser Diode DL-3147-161 -261 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3147-161(-261) is index guided 650 nm (Typ.) AIGalnP laser diode with low threshold current and high operating temperature. The low |
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EN5864 DL-3147-161 DL-3147-161 | |
en 586-3
Abstract: EN5863 DL-3147-141 DL-3147-14K-241
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EN5863 DL-3147-141 DL-3147-141 en 586-3 EN5863 DL-3147-14K-241 | |
Contextual Info: Ordering number : EN5867A DL-3149-054 Red Laser Diode DL-3149-054 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3149-054 is 670 nm Typ. index guided AlGaInP laser diode with low threshold current and high operating temperature. The low threshold |
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EN5867A DL-3149-054 DL-3149-054 | |
CQ 637
Abstract: DL-3038-023
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EN5854 DL-3038-023 DL-3038-023 CQ 637 | |
NEC JAPAN 567
Abstract: NX8563LF PX10160E
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NX8563LF NX8563LF NEC JAPAN 567 PX10160E | |
670NM Laser-Diode
Abstract: DL-3148-033
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EN5860 DL-3148-033 DL-3148-033 635nm 670nm 670NM Laser-Diode | |
601 Opto isolator
Abstract: NX8563LF PX10160E
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NX8563LF NX8563LF 601 Opto isolator PX10160E | |
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diode hp 2835 schottky
Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
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DL-3149-054Contextual Info: Ordering number : EN5867 Red Laser Diode D L -3 149-054 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3149-054 is 670 nm Typ. index guided AIGalnP laser diode with low threshold current and high operating temperature. The low threshold |
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EN5867 DL-3149-054 DL-3149-054 | |
laser barcode reader circuit
Abstract: EN5862 DL-3147-041 DL3147-041
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EN5862 DL-3147-041 DL-3147-041 laser barcode reader circuit EN5862 DL3147-041 | |
601 Opto isolator
Abstract: NX8562LF PX10160E
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NX8562LF NX8562LF 601 Opto isolator PX10160E | |
EN5867Contextual Info: Ordering number : EN5867A DL-3149-054 Red Laser Diode DL-3149-054 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3149-054 is 670 nm Typ. index guided AlGaInP laser diode with low threshold current and high operating temperature. The low threshold |
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EN5867A DL-3149-054 DL-3149-054 EN5867 | |
5082-2835 diode
Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
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DL-3038-041Contextual Info: Ordering number : EN5856 Red Laser Diode D L-3038-041 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3038-041 is index guided 635 nm Typ. AIGalnP laser diode with low threshold current and high operating temperature. The low threshold current |
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EN5856 DL-3038-041 DL-3038-041 | |
EN5869
Abstract: DL-3149-056
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EN5869 DL-3149-056 DL-3149-056 EN5869 | |
DL-3147-021Contextual Info: Ordering number : EN5861 Red Laser Diode D L -3147-021 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3147-021 is index guided 645 nm Typ. AIGalnP laser diode with low threshold current. The low threshold current is achieved by a strained |
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EN5861 DL-3147-021 DL-3147-021 | |
DL-3148-021
Abstract: En58
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EN5858 DL-3148-021 DL-3148-021 En58 |