DIODE 53A Search Results

APT2*61D120J

Abstract: APT10035LLL APT2X60D120J APT2X61D120J H100 sgs 8 r 15
Contextual Info: 2 3 2 2 3 1 1 4 1 3 4 4 Anti-Parallel Parallel APT2X60D120J APT2X61D120J 27 2 T- SO APT2X61D120J 1200V 53A APT2X60D120J 1200V 53A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode

APT2*61D120J

Contextual Info: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X60D120J APT2X61D120J 27 2 T- 4 APT2X61D120J 1200V 53A APT2X60D120J 1200V 53A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode

CVD-450

Abstract: Laser Diode 808 nm
Contextual Info: LASER DIODE INC 1SE D I Sl&EI&B DODDMSl 5 I T -fh O f C VD-400 SERIES LASER DIODE, INC. QUASI CW LASER DIODE ARRAYS FEATURES: ► ► ► ► ► ► ► DESCRIPTION: The CVD-400 series lasers are Gallium Aluminum Arse­ nide Monolithic Quantum Well Arrays made by MOCVD

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

904nm

Abstract: GaAs 904nm LD67 LD61 LD60 LP-23C 904nm laser diode
Contextual Info: r LASER DIODE INC 15E D I SBÖSTÖS QDGGMSS E | a •a a I T -H I “ OS' _LD-60 SERIES_ LASER DIODE, INC. SINGLE HETEROJUNCTION GaAs LASER DIODES FEATURES High Efficiency at Low Drive Currents P Up to 20 Watts Peak Power Output P Operation to 75° C for Selected Devices

L-53AEIR1BC

Abstract: L-53AEIR1C L-53AEIR2BC L-53AEIR2C
Contextual Info: L-53AEIRXX 5.0mm INFRARED EMITTING DIODE ◆PACKAGE DIMENSIONS ◆ABSOLUTE MAXIMUN RATING: Ta=25℃ ℃ PD（mw） Part No. VR（V） Topr Tstg -35℃ to 85℃ -35℃ to 85℃ Operating Temperature Storage Temperature PARAMETER Power Dissipation Reverse Voltage

APT2X60D120J

Abstract: APT2*61D120J APT10035LLL APT2X61D120J
Contextual Info: 2 1 3 4 2 1 Anti-Parallel APT2X60D120J 3 4 2 1 3 4 SO Parallel APT2X61D120J 2 T- 27 "UL Recognized" ISOTOP file # E145592 ® APT2X61D120J APT2X60D120J 1200V 1200V 53A 53A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS

Contextual Info: 2 1 3 4 2 1 Anti-Parallel APT2X60D120J 3 4 2 1 3 4 Parallel APT2X61D120J 7 22 TO S "UL Recognized" ISOTOP ® APT2X61D120J APT2X60D120J 1200V 1200V 53A 53A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES

Contextual Info: 2 1 3 4 2 1 Anti-Parallel APT2X60D120J 3 4 2 1 3 4 SO Parallel APT2X61D120J 2 T- 27 "UL Recognized" ISOTOP file # E145592 ® APT2X61D120J APT2X60D120J 1200V 1200V 53A 53A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT FEATURES

infrared circuit

Abstract: infrared transistor infrared diode L-53AEIR1BC L-53AEIR1C L-53AEIR2BC L-53AEIR2C
Contextual Info: L-53AEIRXX 5.0mm INFRARED EMITTING DIODE ¡ »ABSOLUTE MAXIMUN RATING: Ta=25ºC PD (mw) Part No. V(BR)R (V) Topr Tstg -35ºC to 85ºC Operating Temperature Reverse Voltage Power Dissipation PARAMETER Range Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds

PSCH 50

Abstract: REC 53A DSA0016070 W1050
Contextual Info: Single Phase Half Controlled Bridges with freewheeling diode PSCH 50 IdAV VRRM = 53A = 400-1600 V Preliminary Data Sheet VRSM VDSM 500 900 1300 1500 *1700 VRRM VDRM 400 800 1200 1400 *1600 Type PSCH 50/04 PSCH 50/08 PSCH 50/12 PSCH 50/14 PSCH 50/16 ~ ~ * Delivery on request

43a 504

Abstract: 17550 APT53F80J MIC4452
Contextual Info: APT53F80J 800V, 53A, 0.13Ω Max, trr ≤470ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT53F80J 800V, 53A, 0.13Ω Max, trr ≤470ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

33A zener diode

Abstract: zener diode 46a
Contextual Info: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

IXSN50N60U1

Abstract: 25CC E72873 50N60 50N60U1
Contextual Info: 4 b û b 2 2 b □ □ □ 1 7 ‘ìl 3flT • IX Y □IXYS IGBT with Diode IXSN50N60U1 >c V .„ High Short Circuit SOA Capability =53A = 600 V VcE<sa„ = 2-5 V 2 4 S ym bol T e st C o n d itio n s 'T l M axim um R a tin g s VcES T j = 25°C to 150°C 600

Contextual Info: LM3535 www.ti.com SNVS598 – AUGUST 2010 LM3535 Multi-Display LED Driver with Ambient Light Sensing and Dynamic Backlight Control Compatibility Check for Samples: LM3535 FEATURES 1 • 2 • • • • • • • • Drives up to 8 LEDs with up to 25mA of Diode

zener zp 278

Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
Contextual Info: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

Contextual Info: 1SMA4728A – SZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference

Contextual Info: SML4728A – SMZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features        Low Profile 1.33mm Max. Case Height 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference

Contextual Info: LM2756 www.ti.com SNVS504B – JULY 2007 – REVISED DECEMBER 2007 LM2756 Multi-Display Inductorless LED Driver with 32 Exponential Dimming Steps in micro SMD Check for Samples: LM2756 FEATURES 1 • 2 • • • • • • • Drives up to 8 LEDs with up to 30mA of Diode

Contextual Info: LM3535 www.ti.com SNVS598 – AUGUST 2010 LM3535 Multi-Display LED Driver with Ambient Light Sensing and Dynamic Backlight Control Compatibility Check for Samples: LM3535 FEATURES • 1 • 2 • • • • • • • • • • • • • • • Drives Up to 8 LEDs With Up to 25mA of Diode

Contextual Info: LM3535 www.ti.com SNVS598 – AUGUST 2010 LM3535 Multi-Display LED Driver with Ambient Light Sensing and Dynamic Backlight Control Compatibility Check for Samples: LM3535 FEATURES • 1 • 2 • • • • • • • • • • • • • • • Drives Up to 8 LEDs With Up to 25mA of Diode

617mA

Abstract: E1 3007
Contextual Info: LM3535 www.ti.com SNVS598 – AUGUST 2010 LM3535 Multi-Display LED Driver with Ambient Light Sensing and Dynamic Backlight Control Compatibility Check for Samples: LM3535 FEATURES • 1 • 2 • • • • • • • • • • • • • • • Drives Up to 8 LEDs With Up to 25mA of Diode