DIODE 600V 2A Search Results

Contextual Info: SML20SIC06C MECHANICAL DATA SILICON CARBIDE SCHOTTKY DIODE 600V 20A Dimensions in mm inches 6.32 (0.249) 6.60 (0.260) 13.59 (0.535) 13.84 (0.545) 1.02 (0.040) 1.27 (0.050) VR (max) 600V VF (typ) 1.5V IF (max) 20A 20.07 (0.790) 20.32 (0.800) 30.35 (1.195)

Contextual Info: LZPF2N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application

Contextual Info: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide

d02s60

Abstract: D02S60C SDT02S60 D02S P-TO220-2-2
Contextual Info: SDT02S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide

d02s60

Abstract: d02s60c PG-TO220-2-2 SDT02S60
Contextual Info: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide

Contextual Info: LZPF4N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application

d02s60

Contextual Info: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide

DIODE 200A 600V schottky

Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
Contextual Info: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

600 V power Schottky silicon carbide diode

Abstract: Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454
Contextual Info: SIDC05D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior

SDP02S60

Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
Contextual Info: Preliminary SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

DI 380 Transistor

Abstract: SOD15 transistor marking p3 STTA206S diode 400v 2A ultrafast marking t51 transistor p2 marking
Contextual Info: STTA206S  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE

STTA206S

Abstract: SMC 4A 400v diode 400v 2A ultrafast DIODE 2A 400V TRANSISTOR 45 P3
Contextual Info: STTA206S TURBOSWITCH  "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY

Contextual Info: STTA206S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2A V rrm 600V trr (typ) V f (max) 20ns 1.5V FEATURES AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE' OPERATION: FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST AND SOFT RECOVERY

STTA206S

Abstract: diode 400v 2A ultrafast
Contextual Info: STTA206S TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATION: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN

mosfet 600v

Abstract: STTA206S DU MARKING
Contextual Info: STTA206S TURBOSWITCH  "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS c u d SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY

R460PF2

Abstract: TA49408 4A600V ISL9R460PF2 TB334 R460P
Contextual Info: ISL9R460PF2 4A, 600V Stealth Diode General Description Features The ISL9R460PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft recovery

IRF840

Abstract: ISL9R460S2 TA49408 TB334
Contextual Info: ISL9R460S2 May 2001 Data Sheet 4A, 600V Stealth Diode Features itle UF7 3P The ISL9R460S2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

STTA106

Abstract: STTA106U diodes STmicroelectronics marking T01 F126 STTA106RL
Contextual Info: STTA106/U TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY

R460PF2

Abstract: ISL9R460PF2 TA49408 TB334
Contextual Info: ISL9R460PF2 4A, 600V Stealth Diode General Description Features The ISL9R460PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft recovery

diodes STmicroelectronics marking T01

Abstract: STTA106 STTA106U F126 STTA106RL smb 45
Contextual Info: STTA106/U  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY

Contextual Info: ISL9R460PF2 4A, 600V Stealth Diode General Description Features The ISL9R460PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft recovery

K460P3

Abstract: K460p TA49408 200a gto preliminary
Contextual Info: ISL9K460P3 4A, 600V Stealth Dual Diode General Description Features The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft

Contextual Info: ISL9K460P3 4A, 600V Stealth Dual Diode General Description Features The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft

Contextual Info: ISL9K460P3 Data Sheet FINAL DRAFT April 2001 4A, 600V Stealth Dual Diode Features itle UF7 3P The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse