DIODE 646 ON Search Results

JANTX1N6776

Abstract: 1N6774 1N6775 1N6776 1N6777 JAN1N6774 JANTX1N6774
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 February 2008. INCH-POUND MIL-PRF-19500/646E 26 November 2008 SUPERSEDING MIL-PRF-19500/646 D 25 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,

50t65

Abstract: bd650 BD644
Contextual Info: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.

Contextual Info: Philips Components Data sheet status P ro d u ct s p e c ific a tio n date of issue April 1991 BDS644/646/648/650/652 PNP silicon Darlington power transistors PINNING -SO T223 DESCRIPTION PNP silicon epitaxial base transistors in a m onolithic Darlington circu it in a

D 1991 AR

Abstract: lg bd645 transistor d 1991 ar BD644 philips BD650 BD643 B0645 BD644 B0643 BD649 philips
Contextual Info: BD644; 646; 648 _ jj^ BD650; 652 PHILIPS INTERNATIONAL SbE D • 711GÛ2b 7b7 M P H I N 'V - 3 3 - 3 SILICON DARLINGTON POWER TRANSISTORS PN P epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TCJ-220

Contextual Info: fl535bOS 0 0 ^ 3 0 SIEMENS 3G7 • _PROFET Target Data Sheet BTS 550 P Smart Highside High Current Power Switch Features Product Summary Overvoltage protection Operating voltage 63 Vbb AZ On-state resistance Load current (ISO) Short circuit current limitation

Contextual Info: LJ r iU UH7yl I—J ^ 4 r l L i ’D “7 / |_ | Z1' C A / H h l l O O H D j r i l J f S ix c o n tro l in p u ts enable th is device to be used as a latch ed | transceiver, u n la tc h e d tra nsceiver, o r a c o m b in a tio n o f b o th . As a latch ed tra nsceiver, data fro m on e bus is stored f o r la te r

D 1991 AR

Abstract: BD644 transistor 648 transistor bd650 transistor bd644 b0651 BD65 BD651 lms-21 BD645
Contextual Info: J BD644; 646; 648 ^B P 6 5 0 ; 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T0-220 envelope and intended for applications such as audio output stages, switching, and general amplifiers.

Contextual Info: e Q S 54/74F C T 646 Q S 54/74F C T 648 High Speed CMOS 8-bit Bus Interface Register Transceivers FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static • Available in PDIP, ZIP, SOIC, QSOP, CERDIP

FCT2000

Abstract: C1213 5A2R
Contextual Info: QUALITY SEMICONDUCTOR Q S 54/74F C T 646 Q S54/74FCTG 48 High Speed CMOS 8-bit Bus Interface Register Transceivers Q INC, qI m /mfctm JS FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static

linfinity

Abstract: SM600 SM645 SM645K SM646 pic 645
Contextual Info: SM645/SM646/SM647 SWITCHING REGULATOR POWER OUTPUT STAGES DESCRIPTION FEATURES The SM645/646/647 series of Power Output Stages are especially designed to be driven with standard PWM integrated circuits to form an efficient switching power supply. The SM645,

D 1991 AR

Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode
Contextual Info: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0

BD 650

Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Contextual Info: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

smd npn darlington

Abstract: smd .652 BDS644 BDS646 BDS648 BDS650 BDS652 IEC134
Contextual Info: Philips Components Data sheet status Product specification date of issue April 1991 BDS644/646/648/650/652 PNP Silicon Darlington power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 PNP Silicon epitaxial base transistors in a monolithic Darlington circuit in a

652 smd

Abstract: BDS650 IR P 648 H BDS644 BDS646 BDS648 BDS652
Contextual Info: PHILIPS INTERNATIONAL SbE » • 71iaâSb~0GM31SS M73 mTtmT Philips Components Data sheet status P rod uct specification date of issue April 1991 B D S 6 4 4 /6 4 6 /6 4 8 /6 5 0 /6 5 2 PNP Silicon Darlington power transistors PIN N IN G - SOT223 DESCRIPTIO N

74HCTLS

Abstract: Zytrex
Contextual Info: Zytrex B G W K nS F ebrua ry 1985 646 ZX74HCTLS 648 Octal 3-State Bus Transceivers with Registers OBJECTIVE SPECIFICATIONS Features Description • 8 bi-directional data paths The ’646 and '648 are bi-directional bus transceivers with D-type flip-flops and control circuitry to facilitate high

Contextual Info: QSFCT646T, 648T, 2646T, 2648T High Speed CMOS 8-bit Bus Interface Register Transceivers Q Q S54/74FC T646T qs54/74fct648t S ssJ^Fci^si FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static

6206a

Abstract: mcc501 MDK630
Contextual Info: Product Brief Thyristor & Diode Modules March 2013 – Issue 4 Features and benefits IXYS UK’s range of isolated base pressure contact thyristor and diode modules, designed to industry standard outlines is perfect for

Contextual Info: QSFCT646T, 648T, 2646T, 2648T Ô High Speed CMOS 8-bit Bus Interface Register Transceivers Q S54/74FC T646T Q S54/74FC T648T Q S54/74FC T2646T Q S54/74FC T2648T FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static

2646D

Contextual Info: QSFCT646T, 648T, 2646T, 2648T High Speed CMOS 8-bit Bus Interface Register Transceivers ö Q S 54/74FC T646T Q S54/74FC T648T / ncciI71CPT, CiCT FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static

Contextual Info: flUALTTY S E M I C O N D U C T O R INC 41E D • 7Mbfcifl03 O O O Q T O b T B 2 S I QSFCT646T, 648T, 2646T, 2648T High Speed CMOS 8-bit Bus Interface Register Transceivers Q T -5 % -3 D -D % QS54/74FCT646T QS54/74FCT648T QS54/74FCT2646T QS54/74FCT2648T FEATURES/BENEFITS

2646D

Abstract: QS32383 QS3383
Contextual Info: QSFCT646T, 648T, 2646T, 2648T QS54/74FCT646T QS3383 QS54/74FCT648T QS32383 QS54/74FCT2646T QS54/74FCT2648T* High Speed CMOS High Speed CMOS 8-BitBus BusExchange Interface RegisterSwitches Tranceivers Q FEATURES/BENEFITS • Pin and function compatible to the 74F646/8

2648A

Contextual Info: QSFCT646T, 648T, 2646T, 2648T Q High Speed CMOS 8-bit Bus Interface Register Transceivers Q S54/74FC T646T Q S54/74FC T648T Q S54/74FC T2646T Q S54/74FC T2648T FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static

Contextual Info: W lÆ ▼i V ^ /* /W Product Features: |j í 7 /I ^ • PI74FCT646T/648T/6 51T/652T/2646T/2652T is pin compatible with bipolar FAST Series at a higher speed and lower power consumption • 250 series resistor on all outputs FCT2XXX only • TTL input and output levels

on 648

Contextual Info: QSFCT646T, 648T, 2646T, 2648T Q H g h . .y i. 8 - B R it S p e e d B u s e g is t e r C M O S q s 5 4 /7 4 646 t 2646 t f c t QS54/74FCT648T I n t e r f a c e T r a n c e iv e r s q s s 3 4 /7 4 f c t QS54/74FCT2648T* FEATURES/BENEFITS • Pin and function compatible to the 74F646/8