DIODE 686 Search Results

TO63

Abstract: 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
Contextual Info: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629

2N4039

Abstract: 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4038 2N4221
Contextual Info: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES

2N4303

Abstract: 2N3437 2n3866 noise 2N5566 2N4039 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161
Contextual Info: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES

2N4211

Abstract: TO63 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
Contextual Info: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629

2N3214

Abstract: TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1043 2N1044
Contextual Info: DIODE TRANSISTOR CO INC "ai 28483 52 DIODE T R A N S I S T O R CO INC DE~|efli|fl35E O O D D i n 0 I " 84D 00119 D T- J 5- o7 D1QDE TPidf\15J5TQPi CO., INC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5883

c4d02120

Abstract: C4D02120E CSD04060 D0212
Contextual Info: C4D02120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF AVG = 2 A Qc Features • • • • • • Package 1200-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation

SMA905

Abstract: LDD100-3 ntc pt100 limo FB laser LDD100 SMA905 connector SMA905 CONNECTOR DRAWING diode e 2060 1025-1080nm DIODE 809
Contextual Info: LIMO FB Series pump HIGH-POWER DIODE LASER • • • • • • • Optical data High brightness laser for, pump applications SMA905 Plug & Play connector for optical fibres Compact dimensions Passively cooled Dual temperature sensor (NTC/PT100) Optional monitor diode

APT100S20B

Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode APT100S20B 200V 120A 1 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Soft Recovery Characteristics • Low Losses

SIE726DF

Contextual Info: New Product SiE726DF Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY • SkyFET Monolithic TrenchFET Power MOSFET and Schottky Diode RoHS • Ultra Low Thermal Resistance Using COMPLIANT Top-Exposed PolarPAK® Package for

transistor 3504 npn

Abstract: 2N3742 2N3867 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152
Contextual Info: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803

2N3867

Abstract: 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152 2N5153 2N5154
Contextual Info: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803

APT100S

Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK APT100S20B APT100S20S 1 2 200V 200V 120A 120A 2 1 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Soft Recovery Characteristics

Contextual Info: C3D04060E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 7.5 A Z-Rec Rectifier Qc Features • • • • • • • • 600 V = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

C3D04060E

Abstract: CREE C3D04060
Contextual Info: C3D04060E–Silicon Carbide Schottky Diode Z-REC RECTIFIER VRRM = 600 V IF =4A TC < 160 °C Qc Features • • • • • • • • = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

C4D02120E

Contextual Info: C4D02120E VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 7 A Z-Rec Rectifier Qc Features • • • • • • 12 nC Package 1.2kV Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation

Contextual Info: C3D03065E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 5.5 A Z-Rec Rectifier Qc Features • • • • • • • • 650 V = 6.7 nC Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

Contextual Info: C3D04065E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 7.5 A Z-Rec Rectifier Qc Features • • • • • • • • 650 V = 8.5 nC Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

marking D03

Contextual Info: C3D04060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 4 A Qc = 8.5 nC Features • • • • • • • • Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage

C3D03060

Abstract: C3D03060E 175C DIODE MARKING 534 C3D03
Contextual Info: C3D03060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 3 A Qc = 6.7 nC Features Package • • • • • • • • TO-252-2 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

C4D02120E

Abstract: c4d02120
Contextual Info: C4D02120E–Silicon Carbide Schottky Diode Z-Rec Rectifier Features • • • • • • IF, TC<135˚C = 6.9 A Qc = 15 nC 1200-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior

TO-220 package thermal resistance

Abstract: C3D02060
Contextual Info: C3D02060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 2 A Qc Features • • • • • • • • = 4.8 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage

rectifier diode 3A

Contextual Info: C3D03060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 3 A Qc = 6.7 nC Features Package • • • • • • • • TO-252-2 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

C3D02060

Abstract: TO-220 package thermal resistance C3D02060E 175C CSD10060
Contextual Info: C3D02060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 2 A Qc Features • • • • • • • • = 4.8 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage

C3D02060

Contextual Info: C3D02060E VRRM = Silicon Carbide Schottky Diode 600 V IF TC=135˚C = 4 A Z-Rec Rectifier Qc = Features Package • • • • • • • • TO-252-2 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current