DIODE 6A 600V Search Results

rur660

Contextual Info: RURD660S9A_F085 Ultrafast Power Rectifier, 6A 600V Features 6A, 600V Ultrafast Rectifier • High Speed Switching trr=63ns(Typ. @ IF=6A ) The RURD660S9A_F085 is an ultrafast diode with soft recovery characteristics (trr< 83ns). It has a low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is

Contextual Info: RURD660S9A_F085 Ultrafast Power Rectifier, 6A 600V Features 6A, 600V Ultrafast Rectifier • High Speed Switching trr=63ns(Typ. @ IF=6A ) The RURD660S9A_F085 is an ultrafast diode with soft recovery characteristics (trr< 83ns). It has a low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is

APT6SC60K

Abstract: APT6SC60SA
Contextual Info: 1 2 D2PAK TO-220 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 1 2 APT6SC60K APT6SC60SA 600V 600V 6A 6A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly

6A4 DIODE

Abstract: AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2 1N4002
Contextual Info: DIODE RECTIFIERS • 1.0A THRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6.0 @ TEMP "C 25 25 25 25 25 SURGE (A) 50 50 200 150 400 50V 1N4001 J-05 RL251 1N5400 6A-05 100 V 1N4002 0-1 RL252 1N5401 6A-1 200V 1N4003 J-2 RL253 1N5402 6A-2 400V 1N4004

g3n60c3d

Abstract: HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Contextual Info: S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = +25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability

Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS H A R R IS semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features JEDEC TO-220AB • 6A, 600V at Tc = +25°c EMITTER . 600V Switching SOA Capability • Typical Fall Time - 130ns at T j = +150°C

hg 3a 1004

Abstract: BT 139 F applications note
Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS ¡H A R R IS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features JEDEC TO -220AB • 6A, 600V at Tc = +25°C EMITTER • 600V Switching SOA Capability

APT06DC60HJ

Contextual Info: APT06DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 6A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery

APT06DC60HJ

Contextual Info: APT06DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 6A @ Tc = 100°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features     + ~ SiC Schottky Diode

DMV1500SDFD

Abstract: DMV1500SD DMV1500SDFD6
Contextual Info: DMV1500SD DAMPER + MODULATION DIODE FOR VIDEO Table 1: Main Product Characteristics DAMPER MODUL. IF AV 6A 6A VRRM 1500 V 600 V trr (typ) 150 ns 60 ns VF (typ) 1.1 V 1.0 V DAMPER 1 MODULATION 2 3 FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ ■ ■

DMV1500SD

Abstract: DMV1500SDFD DMV1500SDFD6
Contextual Info: DMV1500SD DAMPER + MODULATION DIODE FOR CRT TV Table 1: Main Product Characteristics DAMPER MODUL. IF AV 6A 6A IFpeak (max) 12 A 12 A VRRM 1500 V 600 V trr (typ) 150 ns 60 ns VF (typ) 1.1 V 1.0 V VFP (typ) 26 V 5V DAMPER 1 MODULATION 2 3 1 FEATURES AND BENEFITS

S5VB60

Abstract: SIN12
Contextual Info: SHINDENGEN Square In-line Package Bridge Diode OUTLINE DIMENSIONS S5VB60 Case : S5VB Unit : mm 600V 6A RATINGS ● Absolute Maximum Ratings Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current

Contextual Info: CSD06060 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=600V IF=6A _ Features Benefits • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery

SCS206AM

Contextual Info: SCS206AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 6A QC 9nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications

SCS206AM

Contextual Info: SCS206AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 6A QC 9nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications

diode lt 316

Abstract: marking u4 diode
Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE SF6LD60M 600V 6A Feature • raffittì FRD • f i Vf= 1.65V • High Voltage Super FRD • 7 / IÆ - J I/ ^ • Full Molded • Œ ï i H Œ 2kV S I I • Dielectric Strength 2kV • Low V f=1 .65V Main Use • Switching Regulator

HFA70NC60CSL

Contextual Info: PD -2.461 rev. B 01/99 HFA70NC60CSL TM HEXFRED Ultrafast, Soft Recovery Diode VR = 600V Features VF typ. ƒ = 1.2V • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters IF(AV) = 70A Qrr (typ.) = 210nC IRRM(typ.) = 6A

HFA70NC60CSM

Contextual Info: PD -2.459 rev. B 01/99 HFA70NC60CSM TM HEXFRED Ultrafast, Soft Recovery Diode VR = 600V VF typ. ƒ = 1.2V Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters IF(AV) = 70A Qrr (typ.) = 210nC IRRM(typ.) = 6A

Contextual Info: SCS206AG SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 6A QC 9nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

SCS206AG

Abstract: scs206 ROHM marking
Contextual Info: SCS206AG Datasheet SiC Schottky Barrier Diode lOutline VR 600V IF 6A QC 9nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

SIDC03D60F

Contextual Info: Preliminary SIDC03D60F Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC03D60F 600V ICn 6A A This chip is used for:

Contextual Info: 1 2 TO-257 1 - Cathode 2 - Anode APT6SC60G 600V 6A 11 N.C 22 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly • • • Hard Or Soft Switched

Contextual Info: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters

scs206

Abstract: SCS206AJ
Contextual Info: SCS206AJ SiC Schottky Barrier Diode Datasheet Outline VR 600V IF 6A QC 9nC LPT L <TO-263AB> (1) (2) (3) (4) Features Inner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible