Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE 6AT Search Results

    DIODE 6AT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 6AT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original
    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original
    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original
    PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original
    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    ZENER DIODE 1n5229b

    Abstract: 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5256B 11-ZENER
    Text: 1N5221B THRU 1N5256B GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 2.4 TO 30 Volts Power -0.5 Watt FEATURES l Low profile package l Built-in strain relief l l l Glass passivated junction Low inductance Typical IR less than 5.0 £gA above 4.3V l High temperature soldering :


    Original
    PDF 1N5221B 1N5256B Do-35 MIL-STD-202, 10-TYPICAL 12-ZENER 11-ZENER 13-ZENER ZENER DIODE 1n5229b 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5256B

    Untitled

    Abstract: No abstract text available
    Text: FEP F,B 6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability


    Original
    PDF O-220AB ITO-220AB O-263AB J-STD-020C, ITO-220AB 2002/95/EC 2002/96/EC 08-Apr-05

    DIODE 6AT

    Abstract: JESD22-B102D J-STD-002B
    Text: FEP F,B 6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability


    Original
    PDF O-220AB J-STD-020C, O-263AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB O-263AB 08-Apr-05 DIODE 6AT JESD22-B102D J-STD-002B

    Untitled

    Abstract: No abstract text available
    Text: FEP F,B 6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability


    Original
    PDF O-220AB ITO-220AB O-263AB J-STD-020C, O-220AB ITO-220AB 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: FEP F,B 6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability


    Original
    PDF O-220AB ITO-220AB O-263AB J-STD-020C, O-220AB ITO-220AB 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: FEP F,B 6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction ITO-220AB • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current 2


    Original
    PDF O-220AB ITO-220AB J-STD-020, O-263AB ITO-220AB 2002/95/EC 2002/96/EC 08-Apr-05

    DIODE 6AT

    Abstract: JESD22-B102 J-STD-002 FEP6BT
    Text: FEP F,B 6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction ITO-220AB • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current 2


    Original
    PDF O-220AB ITO-220AB J-STD-020, O-263AB O-220AB ITO-220AB O-263AB 2002/95/EC 2002/96/EC 18-Jul-08 DIODE 6AT JESD22-B102 J-STD-002 FEP6BT

    Untitled

    Abstract: No abstract text available
    Text: FEP F,B 6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction ITO-220AB • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current 2


    Original
    PDF O-220AB ITO-220AB J-STD-020, O-263AB ITO-220AB 2002/95/EC 2002/96/EC 2011/65/EU

    Untitled

    Abstract: No abstract text available
    Text: FEP F,B 6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction ITO-220AB • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current 2


    Original
    PDF O-220AB ITO-220AB J-STD-020, O-263AB O-220AB ITO-220AB O-263AB 2002/95/EC 2002/96/EC 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: FEP F,B 6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction ITO-220AB • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current 2


    Original
    PDF O-220AB ITO-220AB J-STD-020, O-263AB ITO-220AB 2002/95/EC 2002/96/EC 11-Mar-11

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original
    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original
    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    12AT6

    Abstract: 6at6 6AT6-12AT6 12at6 diagram 6at6 tube T1447 tube 12AT6 12at6 tube ga 39 diode general electric
    Text: 6AT6 12AT6 ET-T1447 Page 1 6AT6-12AT6 2-57 DUPLEX-DIODE TRIODE TUBES DESCRIPTION AND RATING The 6AT6 is a miniature, duplex-diode, high-mu triode designed for use as a combined detector, amplifier, and automatic-volume-control tube. Except for heater ratings, the 12AT6 is identical to the 6AT6.


    OCR Scan
    PDF 6AT6-12AT6 12AT6 ET-T1447 6at6 6AT6-12AT6 12at6 diagram 6at6 tube T1447 tube 12AT6 12at6 tube ga 39 diode general electric

    IT71

    Abstract: WE VQE 24 E G-115 G-116 IRGMVC50U IRGMVC50UU G122
    Text: International S Rectifier PD-9.825 IRGMVC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • • • • • • Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz


    OCR Scan
    PDF IRGMVC50U 20kHz O-258AA IROWC50U0 IRGMVC50UU WI-S-19SM O-258 IT71 WE VQE 24 E G-115 G-116 IRGMVC50U IRGMVC50UU G122

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan
    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan
    PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan
    PDF

    6at6

    Abstract: CV452 brimar
    Text: MT* C u r r e n t E q u ip m e n t T y p e TYPE 6AT6 r 4 ^ MAX DOUBLE DIODE t TRIODE r^ico I B7G Base R A T IN G S Heater Voltage 6.3 volts Heater C urren t 0.3 amp. A nod e Voltage 300 volts max. D iode C urren t 1.0 roA max. O P E R A T IN G C H A R A C T E R IS T IC S


    OCR Scan
    PDF CV452 6at6 CV452 brimar

    6at6 tube

    Abstract: TUNG-SOL 7B6 6Q7 tube 6AT6 6q7gt
    Text: 6AT6 TUNG-SOL D O U BLE-D IO D E TR IO D E MINIATURE TYPE i -4 MAX UN I POTENT I AL CATHODE r~ 6 .3 VOLTS 8 MAX. T-5-5 m/. HEATER Y' 0 . 3 AMPERE AC OR DC S MAX. W X ANY MOUNTING POSITION GLASS BULB BOTTOM VIEW M I N I A T U R E BUTTON 7 P I N BASE THE 6AT6 IS a COMBINED HIGH-MU VOLTAGE A M P L IFIE R AND DOUBLE-DIODE DETEC­


    OCR Scan
    PDF M8-210 6at6 tube TUNG-SOL 7B6 6Q7 tube 6AT6 6q7gt

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan
    PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485