DIODE 726 Search Results

Contextual Info: bbSB'Ol D0242S4 250 « A P X N AMER PHILIPS/DISCRETE BAS32L b7E D J V HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32L is a planar epitaxial high-speed diode designed for fast logic applications. This SM diode is a leadless diode in a hermetically sealed SOD-80C glass envelope with tin-plated

Contextual Info: ,N AMER '- ° ~f PHILIPS/DISCRETE - — — ObE D - — - bbSBTBl 0015441 b BAS32 J T V - O f - P l HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. . This SM diode is a leadless diode in a hermetically sealed SOD-80 envelope w ith tin-plated metal discs at

si 1125 hd

Abstract: semikron skiip 400 gb 1513GB173-3DL PX16
Contextual Info: SKiiP 1513GB173-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

semikron skiip 400 gb

Abstract: SemiSel 1803GB173-3DW
Contextual Info: SKiiP 1803GB173-3DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

Contextual Info: Product specification Philips Semiconductors BBY31 Variable capacitance diode DESCRIPTION The BBY31 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended for electronic tuning applications in thick and thin film

Contextual Info: P hilips Sem iconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. November 1993 BAS678 QUICK REFERENCE DATA

Contextual Info: BAS16 _ y \ _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a m icrom iniature plastic envelope. It is intended fo r high-speed switching in hybrid th ick and th in -film circuits.

diode F4 6A

Abstract: 4F36F123
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

TC1617

Abstract: TCN75 TCM1617 TCM1617EV TCM1617MQR TC-1617
Contextual Info: SMBUS THERMAL SENSOR WITH EXTERNAL DIODE INPUT EVALUATION KIT AVAILABLE TCM1617 TCM1617 SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TCM1617 is a serially programmable temperature sensor optimized for monitoring modern high performance

acpicompliant win 7

Contextual Info: ACPI-COMPLIANT SMBUS THERMAL SENSOR WITH EXTERNAL DIODE INPUT EVALUATION KIT AVAILABLE TC1066 TC1066 *Patent Pending ACPI-COMPLIANT SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TC1066 is a serially programmable temperature

BAS678

Abstract: BAW62 QDE4331 BAW62 SOT23 MBB111 apx 188
Contextual Info: • Philips Semiconductors N ^ fc.b53T31 AMER 002432b S3T « A P X PH ILIP S /D IS C R FTF L7T - 1\ Product soecificatmn Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

BA221

Abstract: ba221 d BB533
Contextual Info: N AMER PHILIPS/DISCRETE tTE D A • ^53131 Q02bim äb^ IAPX BA221 GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. QUICK REFERENCE DATA Continuous reverse voltage Repetitive peak forward current Storage tem perature

TC1066

Abstract: TC1066MQR TCM1617EV TCN75
Contextual Info: ACPI-Compliant SMBus Thermal Sensor with External Diode Input EVALUATION KIT AVAILABLE TC1066 TC1066 *Patent Pending ACPI-Compliant SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TC1066 is a serially programmable temperature

MIL-PRF-55310

Contextual Info: Helping Customers Innovate, Improve & Grow Application Note Note Voltage Controlled Crystal Oscillators Introduction A VCXO voltage controlled crystal oscillator is a crystal oscillator which includes a varactor diode and associated circuitry allowing the frequency to be changed by application of a voltage across that diode.

Contextual Info: Helping Customers Innovate, Improve & Grow Application Note Note Voltage Controlled Crystal Oscillators Introduction A VCXO voltage controlled crystal oscillator is a crystal oscillator which includes a varactor diode and associated circuitry allowing the frequency to be changed by application of a voltage across that diode.

Contextual Info: N AI1ER PHILIPS/DISCRETE APX ^ 5 3*13 1 DD2b3?a 712 BAY80 b'lE » GENERAL PURPOSE DIODE Silicon planar epitaxial diode in DO-35 envelope; intended for switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.

CMT32N25N3P

Contextual Info: CMT32N25 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced MOSFET is designed to withstand high ! Avalanche Energy Specified energy in avalanche and commutation modes. The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode

MO-193-C

Contextual Info: Si3812DV Vishay Siliconix N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A)

Contextual Info: ICP Test Report Certification Packet Company name: Suzhou Good-Ark Electronics Co.,Ltd. Product Series: DO-34DO-35 Lead-Free switch diode Series Product #:Glass Diode Issue Date: Sep 14 , 2012 It is hereby certified by Suzhou Goodark Electronics CO.,Ltd. that there is neither RoHS EU Directive

Contextual Info: ICP Test Report Certification Packet Company name: Suzhou Good-Ark Electronics Co.,Ltd. Product Series: DO-34DO-35 Lead switch diode Series Product #:Glass Diode Issue Date: Sep 14 , 2012 It is hereby certified by Suzhou Goodark Electronics CO.,Ltd. that there is neither RoHS EU Directive

12N60D1D

Abstract: 12n60d1
Contextual Info: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package Features • 12A,600V JE D E C S T Y LE TO -247 • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description