DIODE 742 Search Results

Semikron skiip 209

Abstract: 742 IC nf 742
Contextual Info: SKiiP 742 GAL 120 - 209 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and FWD Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

742 IC

Abstract: diode 742 nf 742
Contextual Info: SKiiP 742 GAR 120 - 214 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and FWD Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

Contextual Info: SKiiP 1442 GAR 120 - 414 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and FWD Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

DIODE S4 65

Abstract: gal 900 DIODE S4 38
Contextual Info: SKiiP 1442 GAL 120 - 413 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and FWD Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

ECONO2-6PACK IGBT module

Abstract: IC 7425 datasheet IR E78996 IR E78996 105 IRF E78996 E78996 IR ic 4075 datasheet or gate GB35XF120K
Contextual Info: PD - 94570 GB35XF120K IGBT 6PACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics

300f diode

Abstract: 300f SDA48
Contextual Info: SSPll PRELIMINARY SDA48 SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 150 AMPS 50 VOLTS MATCHED POWER SCHOTTKY DIODE ARRAY Designer’s Data Sheet FEATURES: • Each diode is VF matched to within 20mV

Contextual Info: N AMER P H I L I P S / D I S C R E T E bRE bbS3R31 Q0E7DfiR 742 * A P X D Philips Semiconductors Preliminary specification High speed double diode FEATURES 1PS181 QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application.

714 diode

Abstract: 300f diode 300f diodes SDA47
Contextual Info: ^ ~ •■ SSI9II PRELIMINARY SDA47 SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 600 AMPS 35 VOLTS MATCHED POWER SCHOTTKY DIODE ARRAY D e s ig n e r’s Data Sheet FEATURES: ■ Each diode is VF matched to within 20mV

PCX-7420

Abstract: db37 connector 20/7420
Contextual Info: PCX-7420 Data Sheet PCX-7420 PULSED/CW LASER DIODE DRIVER Features: • Output Current up to 21.5 A • Output Voltage up to 24 V • Output Power up to 375 W • Touch screen operation • RS-232, USB and Ethernet computer interfaces The PCX-7420 is an air-cooled, high power CW/QCW current source designed to drive diode

ic 74243

Abstract: MCH3317 MCH5815 SBS007M TA-3841
Contextual Info: Ordering number : ENN7424 MCH5815 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5815 DC / DC Converter Applications 0.25 • [MCH5815] 0.25 Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3317 and a Schottky Barrier Diode (SBS007M) 2195

95089

Abstract: ECONO2-6PACK IGBT module GB50XF60K
Contextual Info: GB50XF60K Vishay High Power Products IGBT Sixpack Module, 48 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse

I27282

Contextual Info: Bulletin I27282 11/06 GB35XF120K IGBT SIXPACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC =35A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

GB35XF120K

Abstract: marking 7850
Contextual Info: Bulletin PD - 94570 rev.A 05/03 GB35XF120K IGBT SIK PACK MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

Contextual Info: Bulletin I27282 11/06 GB35XF120K IGBT SIXPACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC =35A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

1N748

Abstract: 1N748H
Contextual Info: 1N748 500mW silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. +-10% stan. Page 1 of 1 Enter Your Part # Home Part Number: 1N748 Online Store 1N748 Diodes 500mW silicon zener diode. Zener voltage 3.9 V. Test Transistors current 20 mA. +-10% standard tolerance.

Contextual Info: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

diode wg 599

Abstract: WR-22 8 GHz waveguide circulator 710232 WR22 RF CIRCULATOR
Contextual Info: SPST and SPDT PIN Diode Switches 18-110 GHz 7 WG 231/232 Series SMA FEMALE Features • ■ ■ ■ ■ Low Loss High Isolation Fast Switching Compact Package Optional Integral Driver T i B Description This series of SPST and SPDT PIN diode switches is available in seven

Contextual Info: i N AUER PHILIPS/DISCRETE bTE ]> • bbS3T31 OOSbSOl flOb IAPX BY614 MINIATURE HIGH-VOLTAGE SOFT-RECOVERY RECTIFIER DIODE Glass-passivated rectifier diode in a miniature hermetically sealed axial-leaded glass envelope. It is intended as a general purpose rectifier fo r high frequencies and high voltages and owing to its small size

IRF7101

Abstract: IRF7421D1 7421D
Contextual Info: PD- 91411C IRF7421D1 PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint l l l l A A D A 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V

mtl7760ac

Abstract: mtl 7796 MTL7756ac MTL7787P MTL7787 MTL 7756ac MTL7778ac MTL7706 MTL7798 MTL7761ac
Contextual Info: MTL7700 Series Shunt-diode safety barriers Instruction Manual INM7700 CONTENTS 1 2 3 4 OVERVIEW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

BB417

Contextual Info: b3E ]> • bbSa'iSM D[]742bb b51 « S I C B BB417 NAPC/PHILIPS SEP1IC0ND FO R D E T A IL E D IN F O R M A T IO N SEE T H E L A TE S T ISSUE OF H A N D B O O K SCOI OR D A T A S H E E T VARIABLE CAPACITANCE DIODE The B B 417 is a silicon variable capacitance diode in a h e rm e tica lly sealed glass DO -34 envelope.

74LS115

Abstract: 74LS273 74LS189 equivalent 74LS00 QUAD 2-INPUT NAND GATE 74LS265 fan-in and fan out of 7486 74LS93A 74LS181 74LS247 replacement MR 31 relay
Contextual Info: F A IR C H IL D LOW POWER S C H O T T K Y D A TA BOOK ERRATA SHEET 1977 Device Page Item Schematic 2-5 Figure 2-6. Blocking diode in upper right is reversed. Also, diode con­ necting first darlington emitter to output should have series resistor. LS33 5-25

SDA46

Contextual Info: m •■■— » PRELIMINARY SDA46 - SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 300 AMPS 30 VOLTS POWER SCHOTTKY DIODE ASSEMBLY Designer’s Data Sheet