DIODE 78A Search Results

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

IRG7PH42U

Contextual Info: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

IRG7PH42U

Contextual Info: IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

IRG7PH42UD1M

Abstract: 30A, 600v RECTIFIER DIODE
Contextual Info: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

IRG7PH42U

Contextual Info: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

BAW78M

Abstract: SCT595 78-AD
Contextual Info: BAW78M Silicon Switching Diode 4
Switching applications 5
High breakdown voltage 3 2 1 VPW05980 Type Marking BAW78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT595 Maximum Ratings Parameter Symbol Diode reverse voltage VR 400 Peak reverse voltage

SCT-595

Abstract: 78-AD
Contextual Info: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications 5 • High breakdown voltage 3 2 1 VPW05980 Type Marking BAW 78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: Preliminary Technical Information IXFK78N50P3 IXFX78N50P3 Polar3TM HiPerFETTM Power MOSFETs VDSS ID25 = = 500V 78A  68m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G D S Symbol Test Conditions

C67076-A2010-A70

Abstract: 06 diode
Contextual Info: BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC BSM 50 GAL 120 DN2 1200V 78A Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70

Eupec BSM

Abstract: C67076-A2010-A70
Contextual Info: BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 50 GAL 120 DN2 1200V 78A IC Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70

siemens igbt

Contextual Info: SIEMENS BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate BSM 50 GAL 120 DN2 UJ Ï? Type 1c 1200V 78A Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70

VQE 23 E

Abstract: VQE 23 F vqe 23 c VQE 23 D VQE 23 VQE 12
Contextual Info: euoec F BSM 50 G AL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type BSM 50 GAL 120 DN2 VCE h 1200V 78A Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70

bsm 75 gal 120 dn2 CIRCUIT DIAGRAM

Abstract: C67076-A2010-A70
Contextual Info: BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 50 GAL 120 DN2 1200V 78A IC Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70

bsm 75 gal 120 dn2

Abstract: gal 900
Contextual Info: BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 50 GAL 120 DN2 1200V 78A IC Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70

5KP75A

Abstract: SA75A 88 867 103
Contextual Info: TVS DIODE Electrical Characteristics SA & 5KP Series: 5 to 180 Volts Transient Voltage Suppressor 500W & 5000W Break Reverse Maximum Series: SA (500W PPK) Series: 5KP (5000W PPK) Down Stand-Off Clamping Breakdown Voltage Peak Reverse Breakdown Voltage Peak

5KP75A

Abstract: SA75A tvs diode 5000W
Contextual Info: TVS DIODE Electrical Characteristics SA & 5KP Series: 5 to 180 Volts Transient Voltage Suppressor 500W & 5000W Break Reverse Maximum Series: SA (500W PPK) Series: 5KP (5000W PPK) Down Stand-Off Clamping Breakdown Voltage Peak Reverse Breakdown Voltage Peak

IRG4PC50FD

Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1469 IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20

lt 39 diode smd

Abstract: smd diode 78a IRG4ZH71KD
Contextual Info: PD - 91729 IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C,

600V 25A Ultrafast Diode

Abstract: IRGPC50FD2 IRGPC50FD 600v 20a IGBT transistor c128 current rating igbt 600v 20a
Contextual Info: PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

IRGPC50FD2

Contextual Info: PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

Contextual Info: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses

FDD6676A

Abstract: FDD6676AS
Contextual Info: FDD6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter