DIODE 8120 Search Results

TA 8403 A

Abstract: w507 FW507 MCH3312 SB1003M
Contextual Info: FW507 Ordering number : ENN8403 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW507 General-Purpose Switching Device Applications Features • • Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and

RHRPB120

Abstract: ba 10 g 8a IPV2
Contextual Info: RHRP8120 ¡2 HARRIS S E M I C O N D U C T O R 8A, 1200V Hyperfast Diode April 1995 Package Features • Hyperfast with Soft Recovery. <55ns JE D EC TO -220A C • Operating Temperature. +175°C

Contextual Info: RURP8120 3 3 HARRIS S E M I C O N D U C T O R 8A, 1200V Ultrafast Diode April 1995 Features Package JEDEC TO-220AC • Ultrafast with Soft R ecovery. <100ns • Operating Tem p eratu

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

GM5WA06270A

Abstract: PT202MR0MP1 GM1WA55360A GM4BC13300AC GM4JV81200AE GM5WA05260A GM5WA05360A GM5WA06250A GM5WA06260A ISO100
Contextual Info: Chip LEDs for Mobile Products Mobile Phone Digital Still Camera PDA SHARP High Luminosity Chip LEDs add live colors to Mobile Products In the application of mobile products, Light Emitting Diode LED is widely used for the back light or the indicator, taking advantage of

Contextual Info: SANSHA ELECTRIC MFG CO 5bE D 7T T 12M 3 DDDDS'ib 02fl • SEMJ - p diode M o n m .e DF £ 1O O A B PRELIMINARY ■ MAX I MUM RATINGS ' _ Unless other* 5se T j —25T2 Syabol Item R a tin g s U n it I D F 100A 8120 R e p e t i t i v e Peak R e v e rs e V o lt a g e

GMF05LC-HSF-GS08

Abstract: LLP75-6L
Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75-6L Features • • • • • Ultra compact LLP75-6L package Low package profile < 0.6 mm 5-line ESD-protection Low leakage current IR < 0.1 µA Low load capacitance of typ. 43 pF at VR = 0 V

BPW 89

Contextual Info: TELEFUNKEN ELECTRONIC 17E D • a^SQCHfci 00Q65E4 a ■ AL66 ^ RPW 89 _ , - m § F « K l& S electronic CrMlrviTschr>oiogt*s ( ^ i f / * S * 3 i Silicon Photo PIN Diode (N-Type j Applications: Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's.

Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V

vesd05a2-03f

Contextual Info: VESD05A2-03F Vishay Semiconductors 2-line ESD Protection Diode in SOT490 Features • Small SOT490 package • Very low leakage current e3 • ESD protection to IEC 61000-4-2 ± 30 kV Air • ESD protection to IEC 61000-4-2 ± 20 kV (Contact) • Two line asymmetrical ESD-protection (BiAs)

Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V

Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V

VESD05A2-03F

Contextual Info: VESD05A2-03F Vishay Semiconductors 2-line ESD Protection Diode in SOT490 Features • Small SOT490 package • Very low leakage current e3 • ESD protection to IEC 61000-4-2 ± 30 kV Air • ESD protection to IEC 61000-4-2 ± 30 kV (Contact) • Two line asymmetrical ESD-protection (BiAs)

Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V

Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

S219P

Abstract: ep 1387
Contextual Info: TELEFUNKEN ELECTRONIC 17E 1> fl^SOQ^b OOOflSflE 0 IAL66 S 219 P TStUllFMI^IN electronic CrMtn* Technotog*s - Silicon Photo PIN Diode P-Type Applications: T-Ml'53 Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's. -Detector for optical communication, e. g. for optical-fiber transmission systems and

Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75-6L Features • • • • • • • • • • • Ultra compact LLP75-6L package Low package profile < 0.6 mm 5-line ESD-protection e3 Low leakage current IR < 0.1 µA Low load capacitance of typ. 43 pF at VR = 0 V

81200

Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75-6L Features • • • • • • • • • • • Ultra compact LLP75-6L package Low package profile < 0.6 mm 5-line ESD-protection e3 Low leakage current IR < 0.1 µA Low load capacitance of typ. 43 pF at VR = 0 V

Contextual Info: FOLD ファイバ出力型半導体レーザモジュール L12560シリーズ Fiber-Output Laser Diode Module ペルチェ内蔵のコンパクトなファイバ 出力型半導体レーザモジュール （FOLD ）です。 従来品に比べ大幅な省スペースを

Contextual Info: スーパールミネッセントダイオード SLD L12856-04 •特長 ●高輝度 ●低コヒーレンス性 ■用途 ●光ジャイロ ●光通信 ●光応用計測装置 ■概要 SLD (Super Luminescent Diode)はレーザダイオードの高輝度とLEDの低コヒーレンス性を併せ持つ赤外発光素

SI-8120JF

Abstract: G746 SC102 SI-8000JF SI-8120JD
Contextual Info: SI-8120JF Data Sheet 27469.52 ih ng rs tc lato i Sw egu R Step-Down to 12.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the

SC102 diode

Abstract: SC102 capacitor G746 SC102 SI-8000JF SI-8120JD SI-8120JF 8120j
Contextual Info: SI-8120JF Data Sheet 27469.52* ih ng rs tc lato i Sw egu R Step-Down to 12.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the

sanken transistor

Abstract: 8120j
Contextual Info: SI-8120JF Data Sheet 27469.52 ih ng rs tc lato i Sw egu R Step-Down to 12.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the