DIODE 8U Search Results

Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

VCC400V

Abstract: C-150
Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

diode 30a 400v

Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
Contextual Info: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

IRGB5B120KD

Abstract: TF010
Contextual Info: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRGP30B60KD-EP
Contextual Info: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: Comchip Low Profile SMD ESD Protection Diode SMD Diode Specialist CPDURT5V0C-HF RoHS Device Halogen Free 0603/SOD-523F Features 0.071 1.80 0.063(1.60) -Bi-directional ESD protection. -Surface mount package. -Extremely thin / leadless package. 0.039(1.00)

Contextual Info: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDVR083V3UA RoHS Device Features - IEC61000-4-2 ESD ±15kV(Contact),±20kV(Air). - Working voltage: 3.3V SOT-383F 0.086(2.20) 0.079(2.00) - Low leakage current. - Low operating and clamping voltages.

5252B

Abstract: Zener diode 81A
Contextual Info: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES • Small Package : SOT-23. MAXIMUM RATING Ta=25°C SYMBOL RATING CHARACTERISTIC p*D*

zener c26

Abstract: diode zener c26 c26 zener diode
Contextual Info: Central“ CMSZ5221B THRU CMSZ5261B Semiconductor Corp. 250mW ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industri­ al, commercial, entertainment and computer

Contextual Info: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDVR083V3UA RoHS Device Features - IEC61000-4-2 ESD ±15kV(Contact),±20kV(Air). - Working voltage: 3.3V SOT-383F 0.086(2.20) 0.079(2.00) - Low leakage current. - Low operating and clamping voltages.

Contextual Info: TESDU5V0/TESDU12V/TESDU24V Bi-directional ESD Protection Diode Small Signal Diode 0603 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Designed for mounting on small surface. —Moisture sensitivity level 1 —Protects one birectional I/O line

TESDU24

Contextual Info: TESDU5V0/TESDU12V/TESDU24V Bi-directional ESD Protection Diode Small Signal Diode 0603 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Designed for mounting on small surface. —Moisture sensitivity level 1 —Protects one birectional I/O line

Contextual Info: TESDE5V0/TESDE12V/TESDE24V Bi-directional ESD Protection Diode Small Signal Diode 0503 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Designed for mounting on small surface. —Moisture sensitivity level 1 —Protects one birectional I/O line

Contextual Info: Schottky Barrier Diode Single Diode OUTLINE Package : 1F D1FS6 Unit ‘mm Weight U.0f>8u Typ a v-K -y-» 60V 1.1A ' Cathode mark 1I r l cos I GO cn Feature • 'J S M D • Small SMD • P r r s m 7 ' K 5 > î/ x ( S S E • P rrsm Rating Type Na ir: CM

Contextual Info: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

Contextual Info: TESDL5V0/TESDL12V/TESDL24V Bi-directional ESD Protection Diode Small Signal Diode 1005 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Designed for mounting on small surface. —Moisture sensitivity level 1 —Protects one birectional I/O line

AN-994

Abstract: C-150 IRGS15B60K
Contextual Info: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

part r1G

Contextual Info: TESDE5V0/TESDE12V/TESDE24V Bi-directional ESD Protection Diode Small Signal Diode 0503 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Designed for mounting on small surface. —Moisture sensitivity level 1 —Protects one birectional I/O line

Contextual Info: TESDU5V0/TESDU12V/TESDU24V Bi-directional ESD Protection Diode Small Signal Diode 0603 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Designed for mounting on small surface. —Moisture sensitivity level 1 —Protects one birectional I/O line

AN-994

Abstract: C-150
Contextual Info: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.