DIODE 9101 Search Results
DIODE 9101 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
CUZ30V |
![]() |
Zener Diode, 30 V, USC |
![]() |
||
CUZ24V |
![]() |
Zener Diode, 24 V, USC |
![]() |
||
CUZ36V |
![]() |
Zener Diode, 36 V, USC |
![]() |
||
CUZ20V |
![]() |
Zener Diode, 20 V, USC |
![]() |
||
CUZ12V |
![]() |
Zener Diode, 12 V, USC |
![]() |
DIODE 9101 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
BY448
Abstract: BY458
|
Original |
BY448 BY458 MIL-STD-750, BY448 D-74025 07-Jan-03 BY458 | |
Contextual Info: BY448 / BY458 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • Glass passivated junction • Hermetically sealed package Applications High voltage rectification diode Efficiency diode in horizontal deflection circuits Mechanical Data |
Original |
BY448 BY458 OD-57 MIL-STD-750, BY458 D-74025 12-Aug-04 | |
19de3
Abstract: E12-70 Scans-0017327 general electric K-55611-TD298-1A
|
OCR Scan |
19DE3 K-55611-TD298-1A E12-70 Scans-0017327 general electric K-55611-TD298-1A | |
byt51aContextual Info: BYT51. VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • Glass passivated junction • Hermetically sealed package • Low reverse current Applications Rectification diode Mechanical Data 949539 Case: SOD-57 Sintered glass case |
Original |
BYT51. OD-57 MIL-STD-750, BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M | |
byv16 diode
Abstract: BYV16 BYV13 BYV12 BYV14 BYV15 Power Diode 1000V
|
Original |
BYV12 BYV16 MIL-STD-750, BYV12 BYV13 BYV14 600ges D-74025 07-Jan-03 byv16 diode BYV16 BYV13 BYV14 BYV15 Power Diode 1000V | |
BYT51J
Abstract: BYT51A BYT51 BYT51B BYT51D BYT51G BYT51K BYT51M
|
Original |
BYT51. MIL-STD-750, BYT51A BYT51B BYT51D BYT51G BYT51J D-74025 07-Jan-02 BYT51J BYT51A BYT51 BYT51B BYT51D BYT51G BYT51K BYT51M | |
Contextual Info: BYV12 / 13 / 14 / 15 / 16 VISHAY Vishay Semiconductors Fast Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Soft recovery characteristic Low reverse current Applications Fast rectification and switching diode for example for |
Original |
BYV12 OD-57 MIL-STD-750, BYV13 BYV14 BYV15 BYV16 D-74025 13-Aug-04 | |
AN4839
Abstract: DNB63
|
Original |
DNB63 DS4179-5 DS4179-6 7000A DNB63 AN4839 | |
BYV12-BYV16
Abstract: L 9101
|
Original |
BYV12-BYV16 MIL-STD-750, BYV12 BYV13 BYV14 BYV15 BYV16 100K/W BYV12-BYV16 L 9101 | |
air cooled heatsink
Abstract: Dynex Semiconductor DNB63 RECTIFIER DIODE 10000A
|
Original |
DNB63 DS4179-5 DS4179-6 7000A DNB63 air cooled heatsink Dynex Semiconductor RECTIFIER DIODE 10000A | |
Contextual Info: DNB63 DNB63 Rectifier Diode Replaces January 2000 version, DS4179-5.0 DS4179-6.0 August 2001 APPLICATIONS KEY PARAMETERS • Rectification VRRM 1500V IF AV 5794A IFSM 57000A ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers |
Original |
DNB63 DS4179-5 DS4179-6 7000A DNB63 | |
7615a
Abstract: DNB63
|
Original |
DNB63 DS4179-5 DS4179-6 7000A DNB63 7615a | |
Contextual Info: DNB63 DNB63 Rectifier Diode Replaces January 2000 version, DS4179-5.0 DS4179-6.0 August 2001 APPLICATIONS KEY PARAMETERS • Rectification VRRM 1500V ■ Freewheel Diode IF AV 5794A IFSM 57000A ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers |
Original |
DNB63 DS4179-5 DS4179-6 7000A DNB63 | |
DPGL-2050
Abstract: DPGL-1050 DPGL-2000 2 Wavelength Laser Diode 532 nm laser diode LDC-2500 LDD-1000 DPGL-1000 DPGL-2100 DPGL-3010
|
Original |
TEM00) DPGL-2050 DPGL-1050 DPGL-2000 2 Wavelength Laser Diode 532 nm laser diode LDC-2500 LDD-1000 DPGL-1000 DPGL-2100 DPGL-3010 | |
|
|||
HPC940-50C-677
Abstract: Oclaro 1060nm
|
Original |
HPC9xx-50C-677 HPC10xx-50C-677 915nm, 940nm, 980nm, 1030nm 1060nm HPC10xx-50C-677 910-1070nm HPC940-50C-677 Oclaro 1060nm | |
PT-100 temperature sensor
Abstract: Diode 1N4007 vh 801694 EW 35 End Bracket 80659 52640 1N4007 diode bridge
|
OCR Scan |
32/TS 24VDC 1N4007 1N4007 10-pole PT-100 temperature sensor Diode 1N4007 vh 801694 EW 35 End Bracket 80659 52640 1N4007 diode bridge | |
Contextual Info: A L L E GR O MICROSYSTEMS INC TB » • 0 S Q M3 3 Ô 0 0 D 3 7 ÖE S *ALGR T -91-01 PROCESS DBA Process DBA Dual Diode with Common Cathode Process D B A is an epitaxial silicon dual diode with a com m on catho de term inal. It has a typical break down rating of 8 5 V and will o p erate with forward |
OCR Scan |
T-91-01 | |
BY527Contextual Info: BY527 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features • • • • • Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current capability Applications |
Original |
BY527 MIL-STD-750, D-74025 07-Jan-03 BY527 | |
Contextual Info: BY527 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current capability Applications General purpose |
Original |
BY527 OD-57 MIL-STD-750, BY527 D-74025 12-Aug-04 | |
BY448
Abstract: BY458
|
Original |
BY448 BY458 BY448 D-74025 BY458 | |
BYW56
Abstract: BYW52 200 byw52 BYW53 BYW54 BYW55
|
Original |
BYW52 BYW56 MIL-STD-750, BYW52 BYW53 BYW54 BYW55 D-74025 07-Jan-03 BYW56 BYW52 200 BYW53 BYW54 BYW55 | |
BYW56
Abstract: BYW56 v BYW52 VRRM1000V BYW55 BYW52 200
|
Original |
BYW52 BYW56 MILSTD-750, BYW53 BYW54 BYW55 BYW56 D-74025 15-Nov-02 BYW56 v VRRM1000V BYW52 200 | |
BY448
Abstract: BY458
|
Original |
BY448 BY458 BY448 D-74025 27-Sep-00 BY458 | |
BYW52 200Contextual Info: BYW52 / 53 / 54 / 55 / 56 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading |
Original |
BYW52 OD-57 MIL-STD-750, BYW53 BYW54 BYW55 BYW56 BYW52 200 |