DIODE 9146 Search Results

DIODE 9146 Result Highlights (5)

Part	Manufacturer	Description
CEZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, ESC
CUZ8V2	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 8.2 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM
CEZ6V2	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.2 V, ESC

DIODE 9146 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRG4PC50FD Contextual Info: PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	91469B IRG4PC50FD O-247AC O-247AC IRG4PC50FD	PDF
IRG4PC50FD Abstract: IRG4PC50 Contextual Info: PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	91469B IRG4PC50FD O-247AC O-247AC IRG4PC50FD IRG4PC50	PDF
Contextual Info: PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	91462B IRG4PC30UD O-247AC O-247AC	PDF
IRG4PC40FD Contextual Info: PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	91464B IRG4PC40FD O-247AC O-247AC IRG4PC40FD	PDF
IRG4PC30UD Abstract: IRG4PC30 Contextual Info: PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	91462B IRG4PC30UD O-247AC O-247AC IRG4PC30UD IRG4PC30	PDF
IRG4PC30FD Contextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	91460B IRG4PC30FD O-247AC O-247AC IRG4PC30FD	PDF
IRG4PC30FD Contextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	91460B IRG4PC30FD O-247AC O-247AC IRG4PC30FD	PDF
IRG4PC30UD Contextual Info: PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	91462B IRG4PC30UD O-247AC O-247AC IRG4PC30UD	PDF
IRG4PC40FD Contextual Info: PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	91464B IRG4PC40FD O-247AC O-247AC IRG4PC40FD	PDF
Contextual Info: PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	91469B IRG4PC50FD O-247AC O-247AC	PDF
Contextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	91460B IRG4PC30FD O-247AC O-247AC	PDF
Contextual Info: PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	91464B IRG4PC40FD O-247AC O-247AC	PDF
Contextual Info: IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () VGS = 5 V 0.27 • Dynamic dV/dt Rating Qg (Max.) (nC) 12 Qgs (nC) 3.0 • Repetitive Avalanche Rated	Original	IRL520L, SiHL520L 2002/95/EC O-262) 11-Mar-11	PDF
Contextual Info: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)	Original	SiHP17N60D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF

Contextual Info: IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () VGS = 5 V 0.27 • Dynamic dV/dt Rating Qg (Max.) (nC) 12 Qgs (nC) 3.0 • Repetitive Avalanche Rated	Original	IRL520L, SiHL520L O-262) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRL520L Contextual Info: IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () VGS = 5 V 0.27 • Dynamic dV/dt Rating Qg (Max.) (nC) 12 Qgs (nC) 3.0 • Repetitive Avalanche Rated	Original	IRL520L, SiHL520L 2002/95/EC O-262) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRL520L	PDF
Contextual Info: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)	Original	SiHP17N60D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)	Original	SiHP17N60D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)	Original	SiHP17N60D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
MB91F467R Abstract: D-SUB 9 PIN to 9 pin case jp83 MB91V460 FR60 MB91460 Contextual Info: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910053-16 MB91460 SERIES EVALUATION BOARD SK-91467R-176PMC USER GUIDE SK-91467R-176PMC User Guide Revision History Revision History Date 2006/12/06 2007/03/02 2007/06/28 2007/07/31 2007/11/05 2007/12/27	Original	FMEMCU-UG-910053-16 MB91460 SK-91467R-176PMC SK-91467R-176PMC SK-91467R-176PM91467R-176PMC MB91F467R D-SUB 9 PIN to 9 pin case jp83 MB91V460 FR60	PDF
S11074 Contextual Info: SiHP17N60D Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 RDS(on) () VGS = 10 V 0.340 Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration • 100 % Avalanche Tested RoHS • Compliant to RoHS Directive 2002/95/EC	Original	SiHP17N60D 2002/95/EC O-220AB O-220AB SiHP17N60D-E3 11-Mar-11 S11074	PDF
S11074 Contextual Info: SiHP17N60D Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 RDS(on) () VGS = 10 V 0.340 Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration • 100 % Avalanche Tested RoHS • Compliant to RoHS Directive 2002/95/EC	Original	SiHP17N60D 2002/95/EC O-220AB O-220AB SiHP17N60D-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S11074	PDF
IRFD020 Abstract: IL300-D Contextual Info: IRFD020, SiHFD020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 50 RDS(on) () VGS = 10 V Available • Compact, End Stackable 0.10 RoHS* • Fast Switching Qg (Max.) (nC) 24 Qgs (nC) 7.1 • Ease of Paralleling	Original	IRFD020, SiHFD020 2002/95/EC 11-Mar-11 IRFD020 IL300-D	PDF
jp69 Abstract: MB91V460 MB91460 MB91F467R FR60 Contextual Info: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910053-17 MB91460 SERIES EVALUATION BOARD SK-91467R-176PMC USER GUIDE SK-91467R-176PMC User Guide Revision History Revision History Date 2006/12/06 2007/03/02 2007/06/28 2007/07/31 2007/11/05 2007/12/27	Original	FMEMCU-UG-910053-17 MB91460 SK-91467R-176PMC SK-91467R-176PMC Fuji67R-176PMC jp69 MB91V460 MB91F467R FR60	PDF

DIODE 9146 Search Results

DIODE 9146 Result Highlights (5)

DIODE 9146 Datasheets Context Search

IRG4PC50FD

IRG4PC50FD

IRG4PC40FD

IRG4PC30UD

IRG4PC30FD

IRG4PC30FD

IRG4PC30UD

IRG4PC40FD

IRL520L

MB91F467R

S11074

S11074

IRFD020

jp69