DIODE 926 Search Results
DIODE 926 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
CEZ6V8 |
![]() |
Zener Diode, 6.8 V, ESC |
![]() |
||
CUZ8V2 |
![]() |
Zener Diode, 8.2 V, USC |
![]() |
||
CUZ12V |
![]() |
Zener Diode, 12 V, USC |
![]() |
||
MUZ5V6 |
![]() |
Zener Diode, 5.6 V, USM |
![]() |
||
CEZ6V2 |
![]() |
Zener Diode, 6.2 V, ESC |
![]() |
DIODE 926 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
8 port network switch CIRCUIT diagram
Abstract: hf power combiner broadband transformers power combiner broadband transformers generic spst switch UPP9401 2.4 GHZ 8 channel RF transmitter and Receiver circuit mobile charging circuit diagram schematic diagram of cell phone docking station HIGH POWER ANTENNA SWITCH PIN DIODE UPP1001
|
Original |
UM9301 UPP1001-1004, UPP9401 8 port network switch CIRCUIT diagram hf power combiner broadband transformers power combiner broadband transformers generic spst switch UPP9401 2.4 GHZ 8 channel RF transmitter and Receiver circuit mobile charging circuit diagram schematic diagram of cell phone docking station HIGH POWER ANTENNA SWITCH PIN DIODE UPP1001 | |
silicon general 16 pin ceramic dip JContextual Info: SG6100/SG6101 SILICON ADVANCED DATA SHEET GENERAL DIODE ARRAY CIRCUITS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight |
OCR Scan |
SG6100/SG6101 100mA SG6100 SG6101 16-PIN SG6101J 14-PIN SG6100F silicon general 16 pin ceramic dip J | |
Contextual Info: JANUARY 1996 DSF21035SV ADVANCE ENGINEERING DATA DS4176-1.3 DSF21035SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers. FEATURES |
Original |
DSF21035SV DS4176-1 0000A DSF21035SV35 DSF21035SV34 DSF21035SV32 DSF21035SV30 | |
MMAD1108Contextual Info: MMAD1108 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-Pin SOIC package for use as steering diodes protecting |
Original |
MMAD1108 16-Pin RF01065, | |
Contextual Info: MMAD1103 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin SOIC package for use as steering diodes protecting |
Original |
MMAD1103 14-Pin RF01063, | |
UM9701Contextual Info: UM9701 PIN DIODE Low Resistance, Low Distortion, RF Switching Diode Features Description • • • • • • The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design |
OCR Scan |
UM9701 UM9701 | |
7552
Abstract: UM9301
|
OCR Scan |
UM9301 UM9301 33/iHy 60dBmV 68mrr 7552 | |
Contextual Info: UM9701 PIN DIODE Low Resistance, Low Distortion, RF Switching Diode Features Description • • • • • • The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design |
OCR Scan |
UM9701 UM9701 | |
Contextual Info: MMAD1103 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin SOIC package for use as steering diodes protecting |
Original |
MMAD1103 14-Pin RF01063, | |
Contextual Info: SEPTEMBER 1996 DSF20060SF ADVANCE ENGINEERING DATA DS4218-3.3 DSF20060SF FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs • Inverters. ■ Choppers. ■ Inverse Parallel Diode. ■ Freewheel Diode. FEATURES |
Original |
DSF20060SF DS4218-3 DSF20060SF60 DSF20060SF58 DSF20060SF56 DSF20060SF55 CB450. | |
Contextual Info: PIN DIODE UM9301 COMMERCIAL ATTENUATOR DIODE Features • • • • Specified low distortion Low rectification properties at low reverse bias Resistance specified at 3 current points High reliability fused-in-glass construction Description The UM9301 PIN Diode utilizes a special |
OCR Scan |
UM9301 UM9301 60dBm | |
Contextual Info: UM9301 PIN DIODE COMMERCIAL ATTENUATOR DIODE Features • • • • Specified low distortion Low rectification properties at low reverse bias Resistance specified at 3 current points High reliability fused-in-glass construction Description The UM9301 PIN Diode utilizes a special |
OCR Scan |
UM9301 UM9301 | |
MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
|
Original |
MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30 | |
UM4301B
Abstract: z02 surface mounted transistor UM2100 Microwave PIN diode UM7301B RS12 UM4000 UM4300 UM6000 UM7000
|
Original |
UM2100, UM4000, UM4300, UM9552 UM6000, UM7000 UM4301B z02 surface mounted transistor UM2100 Microwave PIN diode UM7301B RS12 UM4000 UM4300 UM6000 UM7000 | |
|
|||
Contextual Info: SË GEC P L E S S E Y JANUARY 1996 SEMI CO NDUC TOR S DS4176-1.3 DSF21035SV FAST RECOVERY DIODE KEY PARAMETERS V RRM 3500V 3000A Jf av 20000A FSM 1500jiC Qr 6.0|is *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers. |
OCR Scan |
DS4176-1 DSF21035SV 0000A 1500jiC DSF21035SV35 DSF21035SV34 DSF21035SV32 DSF21035SV30 bfl522 | |
sg32
Abstract: SG3212F SG3212J CERAMIC FLATPACK jantx diodes
|
OCR Scan |
SG32U MIL-S-19500 SG3212 14-PIN SG3212J/883B SG3212J SG3212F/883B SG3212F sg32 SG3212F SG3212J CERAMIC FLATPACK jantx diodes | |
Diode SE-05
Abstract: QAL-785-04-F-18-1 QAL-785-04-F-18-2 QAL-785-04-F-18-3 780nm laser diode
|
Original |
QAL-785-04-F-18-1/2/3 780nm QAL-780-04-D-18-1/2/3 780nm QAL-785-04-F-18-1/2/3 22MAX 66MAX Diode SE-05 QAL-785-04-F-18-1 QAL-785-04-F-18-2 QAL-785-04-F-18-3 780nm laser diode | |
UM9441 UM9442
Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
|
Original |
MPD-101A UM9441 UM9442 UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter | |
UM9442
Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
|
Original |
MPD-101A UM9442 UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers | |
UPP1004
Abstract: UPP1001 UPP1002 APP1004
|
OCR Scan |
UPP1001 UPP1002 UPP1004 100MHz, UPP1001, UPP10D1, UPP1001 UPP1002 APP1004 | |
SG6101J
Abstract: sg6101
|
OCR Scan |
SG6100/SG6511 SG6101/SG6510 16-PIN SG6101J 1N6101) 14-PIN SG6101J sg6101 | |
Contextual Info: ÜË GEC P L E S S E Y o c t o b e r 1995 SE M IC OND UC TOR S DS4231 -2.2 DSF21060SV FAST RECOVERY DIODE KEY PARAMETERS vR R M 6000V 1690A | A V 16000A FSM 1200(lC Q r 6 .5]lls *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ f Inverters. |
OCR Scan |
DS4231 DSF21060SV 6000A DSF21060SV60 DSF21060SV59 DSF21060SV58 DSF21060SV57 DSF21060SV56 DSF21060SV55 37bfl522 | |
BT 69D
Abstract: FBC 320
|
Original |
FF200R12MT4 CBB32 CBB326 223DB 2313BCBC 1231423567896A42BCD6ED3F 54B36 BT 69D FBC 320 | |
FMXA-1106S
Abstract: XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps
|
Original |
FMXA-1106S Package---TO220F-2Pin D01-002EA-051128 FMXA-1106S XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps |