DIODE 935 LG Search Results

OPB930L

Abstract: OPB940L QPB930L K935 NIFM
Contextual Info: Product Bulletin O PB 930L b7RflSöQ 0 0 0 3 1 1 0 OPTEK 73T Ju ly 1996 Photologic S lo tted O p tical S w itch es Types QPB930L, OPB94QL Series Features • 0.320" 8.13 mm lead space for PC board mount • Choice of aperture • Choice of output configuration

Contextual Info: ALLEGRO MICROSYSTEMS INC 33E D 0S04.33Í- GODSS43 I A L GR 1.25 A QUAD DARLINGTON SWITCHES —MIL-STD-883 COMPLIANT LTLS2064H - ULS2067H Intended for military, aerospace, and related applications, ULS2064H through ULS2077H quad Darlington switches interface

GEOY7015

Contextual Info: Conductively cooled SIRILAS Laser Diode Array 15 W cw at 940nm Conductively cooled SIRILAS® Laser Diode Array 15 W cw at 940nm Lead Pb Free Product - RoHS Compliant SPL LG94-P Vorläufiges Datenblatt / Preliminary data sheet Besondere Merkmale Features

Contextual Info: Conductively cooled SIRILAS Laser Diode Array 15 W cw at 940nm Conductively cooled SIRILAS® Laser Diode Array 15 W cw at 940nm SPL LG94-P Vorläufiges Datenblatt / Preliminary data sheet Besondere Merkmale Features • Kostengünstige Strahlquelle für Dauerstrichund Pulsbetrieb

2068B

Contextual Info: 1.5 A DABLINGTON SWITCHES H igh-voltage, high-current Darlington arrays U L N 2 0 6 1 M through U L N 20 74B are designed for interface betw een low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper motors, m agnetic print ham m ers, m ultiplexed.LED and incandescent

HT 1000-4 power amplifier

Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
Contextual Info: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION

Contextual Info: SGS-THOMSON M74HC646 M74HC648 fâl BÈ! I[Lg(Ef^©M[(BS HC646 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE HC648 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE, INV.) • HIGHSPEED fMAX = 73 MHz (TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 |xA (MAX.) AT Ta = 25 "C

BUZ73

Abstract: SD2822 7a2 diode diode 935 lg LG 932
Contextual Info: SIEMENS BUZ 73 BUZ 73 A SIPMOS Power MOS Transistors VDS = 200 V /q = 7 .0 /5 .5 A ^os on ~ 0 .4 /0 .6 Q • N channel • Enhancem ent mode • A valanche-proof • Package: TO -220 A B 1) TVpe Ordering code BUZ 73 C 6 7 0 7 8 -S 1 31 7-A2 BUZ 7 3 A C 6 70 78-S 1 31 7-A 3

PC intel 945 MOTHERBOARD CIRCUIT diagram

Abstract: intel 915 MOTHERBOARD pcb CIRCUIT diagram 945 MOTHERBOARD CIRCUIT diagram intel 965 motherboard circuit diagram intel 915 MOTHERBOARD CIRCUIT diagram pentium 4 motherboard 945 CIRCUIT diagram A23 925 diode intel 915 MOTHERBOARD SERVICE MANUAL 945 MOTHERBOARD pcb CIRCUIT diagram 945 MOTHERBOARD ic diagram
Contextual Info: Intel Pentium® D Processor 900Δ Sequence and Intel® Pentium® Processor Extreme Edition 955Δ, 965Δ Datasheet – On 65 nm Process in the 775-land LGA Package supporting Intel® 64 Architecture and supporting Intel® Virtualization Technology± January 2007

945 MOTHERBOARD CIRCUIT diagram

Abstract: PC intel 945 MOTHERBOARD CIRCUIT diagram A23 925 diode intel 915 MOTHERBOARD SERVICE MANUAL intel 965 motherboard circuit diagram intel 915 motherboard circuit diagram 945 MOTHERBOARD ic diagram PC MOTHERBOARD intel 945 circuit diagram 775 MOTHERBOARD CIRCUIT diagram intel 945 motherboard check point
Contextual Info: Intel Pentium® D Processor 900Δ Sequence and Intel® Pentium® Processor Extreme Edition 955Δ, 965Δ Datasheet – On 65 nm Process in the 775-land LGA Package supporting Intel® 64 Architecture and supporting Intel® Virtualization Technology± January 2007

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, com mon emitter, class AB linear am plifier applications. • Specified 26 Volt, 960 MHz C haracteristics Output Power = 50 W atts

OSI photo detector

Abstract: 1N6266
Contextual Info: Emitter Specifications 1N6266 Infrared Emitter Gallium Arsenide Infrared Emitting Diode <i£•L -• •-A—— ■M a 1 t 00 *?' T he 1N6266 is a gallium-arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength o f 940

Contextual Info: TO SH IB A TD62064,074P/AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62064P, TD62064AP, TD62064F, TD62064AF TD62074P, TD62074AP, TD62074F, TD62074AF 4CH HIGH-CURRENT DARLINGTON SINK DRIVER The TD62064P /A P / F / AF and TD62074P /A P/F/A F are

Contextual Info: SEM IC O N D U C TO R FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 5.7A, 30mQ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS on @VQS=2.5V on special

transistor WLM

Abstract: transistor st 932
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhan ce m e n t m ode standard level fie ld -e ffe ct pow er tran sisto r in a plastic envelope using ’tre n c h ’ technology. T h e device

ULN-2068B

Abstract: 93 66b
Contextual Info: S C S -T H O M S O N OUO IC E g ïM iO ! ULN2064B ULN2070B ULN2066B ULN2074B ULN2068B ULN2076B 50 V -1 .5 A QUAD DARLINGTON SWITCHES • OUTPUT CURRENT T 0 1.5 A EACH DARLING­ TON ■ MINIMUM BREAKDOWN 50 V ■ SUSTAINING VOLTAGE AT LEAST 35 V ■ INTEGRAL

GTO philips

Abstract: lg diode 923 Philips gto M1475 IEC134 gto 5A M2739 gate turn-off diode 935 lg lg diode 932
Contextual Info: DEVELOPMENT DATA T his data sheet contains advance information and are subiect to change w ithout notice. N AMER PH ILI P S/ DI S CR ET E BTV160DV SERIES GbE D 1^53^31 DDinOS FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE S T -0 S T -/7 Fast gate tu rn -o ff thyristors w ith anti-parallel connected fast soft-recovery diodes in ISOTOP. They

2066H

Abstract: LA 4289 742232 6A4 DIODE sprague electric st 9741 max 9694 e jis h 8502 ULS-2068H ULS-2069H
Contextual Info: U LS-2064H THROUGH ULS-2077H f»SPRAGUE U S ÄL_ W Æ F THE M A R K OF RELIABILITY Integrated Circuits ULS-2064H THROUGH ULS-2077H 1.25 A QUAD DARLINGTON SWITCHES MIL-STD-883 Compliant FEATURES • • • • TTL, DTL, PMOS, or CMOS Compatible Units Transient-Protected Outputs

transistor rf m 1104

Abstract: MOTOROLA TRANSISTOR 935
Contextual Info: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics

ULN20648

Abstract: ULN-20648 LG 5804 SW 2596
Contextual Info: 1.5 A DARLINGTON SWITCHES High-voltage, high-current Darlington arrays ULN2064B/LB through ULN2069B/LB are designed for interface between low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper motors, magnetic print hammers, multiplexed LED and

Contextual Info: RMH110N04 Nch 40V 11A Power MOSFET Datasheet lOutline VDSS 40V RDS on at 10V (Max.) 11.7mW RDS(on) at 4.5V (Max.) 17.5mW ID 11A PD 2.0W lFeatures (8) SOP8 (1) (2) (3) (7) (6) (5) (4) lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant

rohm mtbf

Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this

Contextual Info: MOTOROLA Order this document by MMSF4P01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M SF4P01 HD Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

Application Note tda5145

Abstract: TDA5145
Contextual Info: P h ilip s S e m ico n d u cto rs Prelim inary sp ecifica tion Brushless DC motor drive circuit TDA5145 FEATURES QUICK REFERENCE DATA • Full-wave commutation using push/pull drivers at the output stages without position sensors Measured over full voltage and temperature range