GEOY7015
Abstract: No abstract text available
Text: Conductively cooled SIRILAS Laser Diode Array 15 W cw at 940nm Conductively cooled SIRILAS® Laser Diode Array 15 W cw at 940nm Lead Pb Free Product - RoHS Compliant SPL LG94-P Vorläufiges Datenblatt / Preliminary data sheet Besondere Merkmale Features
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940nm
LG94-P
GEOY7015
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Untitled
Abstract: No abstract text available
Text: Conductively cooled SIRILAS Laser Diode Array 15 W cw at 940nm Conductively cooled SIRILAS® Laser Diode Array 15 W cw at 940nm SPL LG94-P Vorläufiges Datenblatt / Preliminary data sheet Besondere Merkmale Features • Kostengünstige Strahlquelle für Dauerstrichund Pulsbetrieb
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940nm
LG94-P
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HT 1000-4 power amplifier
Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
Text: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION
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75WATT
HT 1000-4 power amplifier
triac tag 8739
H48 zener diode
TRIAC TAG 8812
Zener diode H48
h48 diode zener
loctite 5145
RF MODULE CIRCUIT DIAGRAM z 10 cd harris
transistor f6 13003
OM370
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PC intel 945 MOTHERBOARD CIRCUIT diagram
Abstract: intel 915 MOTHERBOARD pcb CIRCUIT diagram 945 MOTHERBOARD CIRCUIT diagram intel 965 motherboard circuit diagram intel 915 MOTHERBOARD CIRCUIT diagram pentium 4 motherboard 945 CIRCUIT diagram A23 925 diode intel 915 MOTHERBOARD SERVICE MANUAL 945 MOTHERBOARD pcb CIRCUIT diagram 945 MOTHERBOARD ic diagram
Text: Intel Pentium® D Processor 900Δ Sequence and Intel® Pentium® Processor Extreme Edition 955Δ, 965Δ Datasheet – On 65 nm Process in the 775-land LGA Package supporting Intel® 64 Architecture and supporting Intel® Virtualization Technology± January 2007
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775-land
72630QM
72635QM
72670QM
72675QM
52430M
52435M
52410M
52415M
el-Pentium-Processor-Extreme-Edition-965-
PC intel 945 MOTHERBOARD CIRCUIT diagram
intel 915 MOTHERBOARD pcb CIRCUIT diagram
945 MOTHERBOARD CIRCUIT diagram
intel 965 motherboard circuit diagram
intel 915 MOTHERBOARD CIRCUIT diagram
pentium 4 motherboard 945 CIRCUIT diagram
A23 925 diode
intel 915 MOTHERBOARD SERVICE MANUAL
945 MOTHERBOARD pcb CIRCUIT diagram
945 MOTHERBOARD ic diagram
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945 MOTHERBOARD CIRCUIT diagram
Abstract: PC intel 945 MOTHERBOARD CIRCUIT diagram A23 925 diode intel 915 MOTHERBOARD SERVICE MANUAL intel 965 motherboard circuit diagram intel 915 motherboard circuit diagram 945 MOTHERBOARD ic diagram PC MOTHERBOARD intel 945 circuit diagram 775 MOTHERBOARD CIRCUIT diagram intel 945 motherboard check point
Text: Intel Pentium® D Processor 900Δ Sequence and Intel® Pentium® Processor Extreme Edition 955Δ, 965Δ Datasheet – On 65 nm Process in the 775-land LGA Package supporting Intel® 64 Architecture and supporting Intel® Virtualization Technology± January 2007
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PDF
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775-land
945 MOTHERBOARD CIRCUIT diagram
PC intel 945 MOTHERBOARD CIRCUIT diagram
A23 925 diode
intel 915 MOTHERBOARD SERVICE MANUAL
intel 965 motherboard circuit diagram
intel 915 motherboard circuit diagram
945 MOTHERBOARD ic diagram
PC MOTHERBOARD intel 945 circuit diagram
775 MOTHERBOARD CIRCUIT diagram
intel 945 motherboard check point
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Untitled
Abstract: No abstract text available
Text: RMH110N04 Nch 40V 11A Power MOSFET Datasheet lOutline VDSS 40V RDS on at 10V (Max.) 11.7mW RDS(on) at 4.5V (Max.) 17.5mW ID 11A PD 2.0W lFeatures (8) SOP8 (1) (2) (3) (7) (6) (5) (4) lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant
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RMH110N04
R1102A
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OPB930L
Abstract: OPB940L QPB930L K935 NIFM
Text: Product Bulletin O PB 930L b7RflSöQ 0 0 0 3 1 1 0 OPTEK 73T Ju ly 1996 Photologic S lo tted O p tical S w itch es Types QPB930L, OPB94QL Series Features • 0.320" 8.13 mm lead space for PC board mount • Choice of aperture • Choice of output configuration
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OPB930L
OPB93QL,
OPB94QL
OPB940L
OPB930W/OPB940W
b7Tfi560
QPB930L
K935
NIFM
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 33E D 0S04.33Í- GODSS43 I A L GR 1.25 A QUAD DARLINGTON SWITCHES —MIL-STD-883 COMPLIANT LTLS2064H - ULS2067H Intended for military, aerospace, and related applications, ULS2064H through ULS2077H quad Darlington switches interface
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GODSS43
MIL-STD-883
LTLS2064H
ULS2067H
ULS2064H
ULS2077H
ULS2064/65/68/69/74/75H
ULS2066/67/70/71/76/77H
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2068B
Abstract: No abstract text available
Text: 1.5 A DABLINGTON SWITCHES H igh-voltage, high-current Darlington arrays U L N 2 0 6 1 M through U L N 20 74B are designed for interface betw een low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper motors, m agnetic print ham m ers, m ultiplexed.LED and incandescent
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ULN2064/65B
ULN2064LB
2068LB
B-1364A
2068B
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M74HC646 M74HC648 fâl BÈ! I[Lg(Ef^©M[(BS HC646 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE HC648 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE, INV.) • HIGHSPEED fMAX = 73 MHz (TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 |xA (MAX.) AT Ta = 25 "C
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M74HC646
M74HC648
HC646
HC648
54/74LS646/648
M74HC646/648
74HC646/648
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BUZ73
Abstract: SD2822 7a2 diode diode 935 lg LG 932
Text: SIEMENS BUZ 73 BUZ 73 A SIPMOS Power MOS Transistors VDS = 200 V /q = 7 .0 /5 .5 A ^os on ~ 0 .4 /0 .6 Q • N channel • Enhancem ent mode • A valanche-proof • Package: TO -220 A B 1) TVpe Ordering code BUZ 73 C 6 7 0 7 8 -S 1 31 7-A2 BUZ 7 3 A C 6 70 78-S 1 31 7-A 3
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15tfic
BUZ73
SD2822
7a2 diode
diode 935 lg
LG 932
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, com mon emitter, class AB linear am plifier applications. • Specified 26 Volt, 960 MHz C haracteristics Output Power = 50 W atts
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MRF6414
MRF6414PHT/D
MRF6414
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OSI photo detector
Abstract: 1N6266
Text: Emitter Specifications 1N6266 Infrared Emitter Gallium Arsenide Infrared Emitting Diode <i£•L -• •-A—— ■M a 1 t 00 *?' T he 1N6266 is a gallium-arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength o f 940
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1N6266
1N6266
L14G1.
OSI photo detector
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Untitled
Abstract: No abstract text available
Text: TO SH IB A TD62064,074P/AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62064P, TD62064AP, TD62064F, TD62064AF TD62074P, TD62074AP, TD62074F, TD62074AF 4CH HIGH-CURRENT DARLINGTON SINK DRIVER The TD62064P /A P / F / AF and TD62074P /A P/F/A F are
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TD62064
074P/AP/F/AF
TD62064P,
TD62064AP,
TD62064F,
TD62064AF
TD62074P,
TD62074AP,
TD62074F,
TD62074AF
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Untitled
Abstract: No abstract text available
Text: DEVELOPMENT DATA BTV160DV SERIES This data sheet contains advance information and _are subject to change without notice. n 'a m e r p h i l i p s /d i s c r e t e ObE D • ’bbS3*i31 O O i n D S S ■ FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE
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BTV160DV
1200R
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transistor WLM
Abstract: transistor st 932
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhan ce m e n t m ode standard level fie ld -e ffe ct pow er tran sisto r in a plastic envelope using ’tre n c h ’ technology. T h e device
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BUK7514-55
transistor WLM
transistor st 932
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ULN-2068B
Abstract: 93 66b
Text: S C S -T H O M S O N OUO IC E g ïM iO ! ULN2064B ULN2070B ULN2066B ULN2074B ULN2068B ULN2076B 50 V -1 .5 A QUAD DARLINGTON SWITCHES • OUTPUT CURRENT T 0 1.5 A EACH DARLING TON ■ MINIMUM BREAKDOWN 50 V ■ SUSTAINING VOLTAGE AT LEAST 35 V ■ INTEGRAL
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ULN2064B
ULN2070B
ULN2066B
ULN2074B
ULN2068B
ULN2076B
ULN2064B,
ULN2066B,
ULN2070B)
ULN-2068B
93 66b
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GTO philips
Abstract: lg diode 923 Philips gto M1475 IEC134 gto 5A M2739 gate turn-off diode 935 lg lg diode 932
Text: DEVELOPMENT DATA T his data sheet contains advance information and are subiect to change w ithout notice. N AMER PH ILI P S/ DI S CR ET E BTV160DV SERIES GbE D 1^53^31 DDinOS FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE S T -0 S T -/7 Fast gate tu rn -o ff thyristors w ith anti-parallel connected fast soft-recovery diodes in ISOTOP. They
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BTV160DV
DD111DS
btv160dv-850r
1000R
1200R
m2723
M2213
bS3T31
GTO philips
lg diode 923
Philips gto
M1475
IEC134
gto 5A
M2739
gate turn-off
diode 935 lg
lg diode 932
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2066H
Abstract: LA 4289 742232 6A4 DIODE sprague electric st 9741 max 9694 e jis h 8502 ULS-2068H ULS-2069H
Text: U LS-2064H THROUGH ULS-2077H f»SPRAGUE U S ÄL_ W Æ F THE M A R K OF RELIABILITY Integrated Circuits ULS-2064H THROUGH ULS-2077H 1.25 A QUAD DARLINGTON SWITCHES MIL-STD-883 Compliant FEATURES • • • • TTL, DTL, PMOS, or CMOS Compatible Units Transient-Protected Outputs
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ULS-2064H
ULS-2077H
ULS-2077H
MIL-STD-883
MIL-STD-883,
2066H
LA 4289
742232
6A4 DIODE
sprague electric
st 9741
max 9694 e
jis h 8502
ULS-2068H
ULS-2069H
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transistor rf m 1104
Abstract: MOTOROLA TRANSISTOR 935
Text: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics
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MRF6414/D
MRF6414
MRF6414PHT/D
MRF6414
2PHX34665Q-0
transistor rf m 1104
MOTOROLA TRANSISTOR 935
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ULN20648
Abstract: ULN-20648 LG 5804 SW 2596
Text: 1.5 A DARLINGTON SWITCHES High-voltage, high-current Darlington arrays ULN2064B/LB through ULN2069B/LB are designed for interface between low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper motors, magnetic print hammers, multiplexed LED and
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ULN2064/65B
ULN2064B/LB
ULN2069B/LB
ULN2064B,
ULN2064LB,
ULN2065B,
ULN2065LB,
ULN2068B,
ULN2068LB,
ULN2069B,
ULN20648
ULN-20648
LG 5804
SW 2596
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rohm mtbf
Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this
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1S211
1S22I
MRF20030
rohm mtbf
kermet case b
bd136 equivalent
933 TRANSISTOR
SILICON PNP POWER TRANSISTOR b 861
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSF4P01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M SF4P01 HD Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs
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MMSF4P01HD/D
SF4P01
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Application Note tda5145
Abstract: TDA5145
Text: P h ilip s S e m ico n d u cto rs Prelim inary sp ecifica tion Brushless DC motor drive circuit TDA5145 FEATURES QUICK REFERENCE DATA • Full-wave commutation using push/pull drivers at the output stages without position sensors Measured over full voltage and temperature range
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TDA5145
Application Note tda5145
TDA5145
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