DIODE 9532 Search Results

Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

VCC400V

Abstract: C-150
Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

9534 diode

Abstract: SVC203SPA
Contextual Info: Ordering number :EN953C SVC203SPA Diffused Junction Type Sillicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions • The SVC203SPA is a varactor diode of dual type with a good linearity of C-V characteristic. It excels

SVC203SPA

Abstract: 4013KI 9534 diode EN953C
Contextual Info: Ordering number :EN953C SVC203SPA Diffused Junction Type Silicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions • The SVC203SPA is a varactor diode of dual type with a good linearity of C-V characteristic. It excels

Contextual Info: Ordering num ber: EN953C SVC203SPA N0.953C Diffused Ju n ctio n Type Silicon Diode Varactor Diode IOCAP for FM Low-V oltage Electronic T uning F e a tu re s • T he SVC203SPA is a v aracto r diode of dual type w ith a good lin e a rity of C-V ch a rac te ristic . It excels in

035H

Abstract: IRFPE30 transistor IC 12A 400v diode Marking code WT
Contextual Info: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

transistor VCE 1000V

Abstract: TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30
Contextual Info: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

power rectifier diode 400v 40a

Abstract: EIA-541 IRFR120
Contextual Info: PD - 95328 IRG4RC10UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter

EIA-541

Abstract: IRFR120
Contextual Info: PD - 95328 IRG4RC10UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter

035H

Abstract: IRFPE30
Contextual Info: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Diode P 619

Abstract: EIA-541 IRFR120 IRFU120 U120 marking code diode 14
Contextual Info: PD - 95324A IRFR9110PbF IRFU9110PbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U9110PbF 2 www.irf.com IRFR/U9110PbF www.irf.com 3 IRFR/U9110PbF 4 www.irf.com IRFR/U9110PbF www.irf.com 5 IRFR/U9110PbF 6 www.irf.com IRFR/U9110PbF Peak Diode Recovery dv/dt Test Circuit

Contextual Info: SMPS IGBT PD - 95329 IRGP35B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

035H

Abstract: 30ETH06 IRFP250 IRFPE30
Contextual Info: SMPS IGBT PD - 95329 IRGP35B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

22a ic

Abstract: 035H 30ETH06 IRFP250 IRFPE30 IRGP35B60PDPBF
Contextual Info: SMPS IGBT PD - 95329 IRGP35B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

Contextual Info: PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

22a ic

Abstract: afaa 035H 30ETH06 IRFPE30 smps igbt 200A 600V FET
Contextual Info: SMPS IGBT PD - 95329 IRGP35B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

Contextual Info: A Telecommunications Microwave MICROWAVE TECHNOLOGY TRAINING SYSTEM MODEL 8090 Complete Microwave Technology Training System, with hybrid tee and PIN diode, Model 8090-2 GENERAL DESCRIPTION The Microwave Technology Training System, Model 8090, is part of the Lab-Volt telecommunications

SC28L198

Abstract: SCC2691AC1A28 LCD 09151 CSOT109 PCA9552 PCK2002 PCF8591 APPLICATION pecl clock so8 PCA9550 PCA9553
Contextual Info: Interface Products Interface Products 67 I2C Logic Family Overview • Analog/Digital Converters It is frequency required to record analog information, such as temperature, pressure, battery level, signal strength, etc. The analog voltage information from the diode, pressure sensor,

1KAB80E

Abstract: 1KAB100E 1KAB10E 1KAB20E 1KAB40E 1KAB60E B125C1000 B250C1000 B40C1000 B80C1000
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new

1KAB60E

Abstract: 1KAB80E B125C1000 B250C1000 B40C1000 B80C1000 1KAB100E 1KAB10E 1KAB20E 1KAB40E
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new

B500C1000

Abstract: 1KAB20 B80C1000 1kab60e 1KAB60 1kab40
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new

1KAB60

Abstract: 1kab20e
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new

10969

Abstract: T1078N T1258N T2509N T828N K53V 024w l 9147 p k0 4 50 2cv1
Contextual Info: M3.2C - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM,DRM ~ 60 Veff 35 V 200 V Satzstrom Id [A] Verlustl. P d Wasserm. v L Schaltung pro KB [W] [ltr/min] Diode D ~ ~ ~ ~ + Kühlblöcke für Wasserkühlung mit offener Isolation