Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF200R06ME3 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EconoDUAL™2 module with the trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT-Wechselrichter / IGBT-inverter
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FF200R06ME3
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FF400R06ME3
Abstract: No abstract text available
Text: Technische Information / technical information FF400R06ME3 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Feldstop IGBT3 und Emitter Controlled3 Diode EconoDUAL™ 2 module with trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT-Wechselrichter / IGBT-inverter
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FF400R06ME3
FF400R06ME3
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FF200R12KT4
Abstract: diode T-71
Text: Technische Information / technical information FF200R12KT4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und optimierter EmCon Diode 62mm C-series module with fast trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter
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FF200R12KT4
FF200R12KT4
diode T-71
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information BSM200GAL120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data
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BSM200GAL120DLC
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BSM200GAL120DLC
Abstract: No abstract text available
Text: Technische Information / technical information BSM200GAL120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data
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BSM200GAL120DLC
BSM200GAL120DLC
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BSM200GAL120DLC
Abstract: T3V2
Text: Technische Information / technical information BSM200GAL120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data
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BSM200GAL120DLC
BSM200GAL120DLC
T3V2
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d655 e
Abstract: No abstract text available
Text: SKN 100 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ 3 [22 122 0A22 0[22 0C22 3 [22 122 0A22 0[22 0C22 =PJ3 U 022 J S 6:X 012Y ;7 U 0A2 ZMW >FG 022¥2[ >F$ 022¥2[ >FG 022¥21 >F$ 022¥21 >FG 022¥0A >F$ 022¥0A >FG 022¥0[ >F$ 022¥0[
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0E222
C20g0H
d655 e
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Untitled
Abstract: No abstract text available
Text: SKN 320 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ 3 B22 [22 0A22 0B22 3 B22 [22 0A22 0B22 =PJ3 U YA2 J S 6:Z 0[2¥ ;7 U 0AE ]MW >FG YA2^2B >F$ YA2^2B >FG YA2^2[ >F$ YA2^2[ >FG YA2^0A >F$ YA2^0A >FG YA2^0B >F$ YA2^0B 0122 0122 >FG YA2^01
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S022W
B22222
Y22222
120a0H
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DIODE MARKING 9X
Abstract: BZT52C24LP BZT52C10LP BZT52C11LP BZT52C5V1LP BZT52C5V6LP BZT52C6V2LP BZT52C6V8LP BZT52C7V5LP BZT52C8V2LP
Text: BZT52C5V1LP - BZT52C24LP SURFACE MOUNT ZENER DIODE Lead-free Green SPICE MODELS: BZT52C24LP BZT52C5V1LP BZT52C5V6LP BZT52C6V2LP BZT52C6V8LP BZT52C7V5LP BZT52C8V2LP BZT52C9V1LP BZT52C10LP BZT52C11LP BZT52C12LP BZT52C13LP BZT52C15LP BZT52C16LP BZT52C18LP BZT52C20LP BZT52C22LP
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BZT52C5V1LP
BZT52C24LP
BZT52C24LP
BZT52C5V6LP
BZT52C6V2LP
BZT52C6V8LP
BZT52C7V5LP
BZT52C8V2LP
BZT52C9V1LP
DIODE MARKING 9X
BZT52C10LP
BZT52C11LP
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DIODE MARKING 9X
Abstract: BZT52C13LP
Text: BZT52C5V1LP - BZT52C24LP SURFACE MOUNT ZENER DIODE Lead-free Green SPICE MODELS: BZT52C24LP BZT52C5V1LP BZT52C5V6LP BZT52C6V2LP BZT52C6V8LP BZT52C7V5LP BZT52C8V2LP BZT52C9V1LP BZT52C10LP BZT52C11LP BZT52C12LP BZT52C13LP BZT52C15LP BZT52C16LP BZT52C18LP BZT52C20LP BZT52C22LP
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BZT52C5V1LP
BZT52C24LP
BZT52C24LP
BZT52C5V6LP
BZT52C6V2LP
BZT52C6V8LP
BZT52C7V5LP
BZT52C8V2LP
BZT52C9V1LP
DIODE MARKING 9X
BZT52C13LP
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IXFB170N30P
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB170N30P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 300V 170A Ω 18mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings
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IXFB170N30P
200ns
PLUS264TM
150citance
100ms
170N30P
IXFB170N30P
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IXFB210N20P
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB210N20P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 210A Ω 10.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings
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IXFB210N20P
200ns
PLUS264TM
100ms
210N20P
IXFB210N20P
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB170N30P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 300V 170A Ω 18mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings
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IXFB170N30P
200ns
PLUS264TM
100ms
170N30P
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IXFB300N10P
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB300N10P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 100V 300A Ω 5.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings
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IXFB300N10P
200ns
PLUS264TM
100ms
300N10P
IXFB300N10P
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BUK638-500B
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE I> • bbS3T31 0030675 Philips semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery reverse diode, particularly suitable
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BUK638-500B
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sharp IR3R42
Abstract: diode demodulation circuit IR3C09 IR3R42 IR3C07 40 mhz remote control transmitter circuit ir3c01 IR3C08N IR3C02A IR3R
Text: SPECIAL FUNCTION ICs ICs far Infrarad Remote Controllerà, Audio Equipment, Leeer Diode Drivers end Motor Drivers • ICs for Infrared Remote Controllers Supply voltage V Function Description Model No. Package Infrared signal receiver pre-amp. 1C Photo diode directly connectable
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IR3T24/N
132-segment
128-segment
IR3C01/N
IR3C02A/AN
IR3C07/N
IR3C08/N
IP/24SOP
IR3C09
30SDIP
sharp IR3R42
diode demodulation circuit
IR3C09
IR3R42
IR3C07
40 mhz remote control transmitter circuit
ir3c01
IR3C08N
IR3C02A
IR3R
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1N1743
Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:
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1N225
1N2260)
1N227
1N228
1N229
1N230O)
1N231d)
1N232
BZX83
BZX97
1N1743
IN5234
IN5008
1N4202
zener diode 1N PH 48
diode 1n1418
1NS232
zener diode c51 ph
1n587
1N4465
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MF0D71
Abstract: MFOD71 MFOD71 motorola MFOD71 circuit 2N4401 ITT MFOE76 MFOD75 fiber optical photo detector MC3302 MOTOROLA FIBER OPTIC
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M FO D71 Fiber O p tic s — FLCS F am ily P h o to D e te c to r Diode Output FLCS FAMILY FIBER OPTICS PHOTO DETECTOR DIODE O U TPU T . . . designed fo r low cost, short distance Fiber Optic Systems using 1000 micron core
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MFOE76
363B-01
MF0D71
MFOD71
MFOD71 motorola
MFOD71 circuit
2N4401 ITT
MFOD75
fiber optical photo detector
MC3302
MOTOROLA FIBER OPTIC
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diode smd marking jy
Abstract: smd marking 9S
Text: Schottky Barrier Diode Single Diode mtmm M2FM3 o u tlin e 30V 6A Feature »/JvSÜSMD »Small SMD • Tj=150°C > V f=0.46V >Tj=150°C » Low V f=0.46V >S lR = 0 .2 m A ' Low Ir=0.2 itiA Main Use • K ï / J J —jSJÜKilt • Reverse connect protection for
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F5LC40
Abstract: No abstract text available
Text: t - K □ Saper Fast Recovery Diode 7 S Twin Diode W W rtim SF5LC40 Case OUTLINE DIMENSIONS FTO-220 400V 5A Unit : ram a » ne« Date code a £ TVpe No. •ey-cx F5LC40 « ree# • trr5 0 n s « n + 0 - i -H I-2-0.1 « •*e iBŒ2KveaE •SR SS myu-m-ob • ü s , 0A» s r a
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SF5LC40
FTO-220
F5LC40
F5LC40
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diode g4l
Abstract: g4l smd
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE5S4M U n it - m m W e ig h t 0 .3 2 6 g T y p 40V 5A Feature • SM D • Tj=150°C ' SM D ' P r RS m T V ^ V Î / i S B E ' P r r s m R ating ' T j= 1 50 °C 1 H igh Io R a tin g -S m all-R K G
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SR1FM-8
Abstract: SR1FM8 srifm-4 PNPN SR1FM igniter fluorescent lamp starters SRIFM
Text: MITSUBISHI PnPn SWITCH DT1A PULSE GENERATION USE LEAD-MOUNTED T YP E O U T L IN E DRAW ING D ES C R IP T IO N Dimention: mm Mitsubishi pnpn switch D T1A are molded plastic type diode thyristors for gas igniters and fluorescent lamp starters. Breakover voltage is 9S~152 V .
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Ta-70Â
SR1FM-8
SR1FM8
srifm-4
PNPN
SR1FM
igniter
fluorescent lamp starters
SRIFM
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IN5639A
Abstract: diode LT 675 IN 407 IN6053 Zener diode IN5637A in5645a IN6036A IN5650A IN6055A IN6042A in6053a
Text: POWERZORB L13 Series 1.5KW Transient Absorption Zener Diode A range of unipolar Protection diodes in a hermetically sealed metal and glass D013 package. ; 1mS expo P max c o n t-
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MRD500
Abstract: motorola MRD500 MRD510 laser diode RW
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIODE O U TP U T PIN SILICO N 250 M ILLIW ATTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te ctio n , lig h t d e m o d u la tio n , d e te ctio n o f v is ib le
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MRD500
MRD510
RD500)
MRD510)
MRD500
motorola MRD500
MRD510
laser diode RW
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