DIODE 9S Search Results

DL5060

Abstract: DL7500
Contextual Info: DATA SHEET NEC ELECTRON DEVICE LASER DIODE MODULE N D L 75 0 0 P 1 310 nm InGaAsP MQW-DC-PBH PULSED LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER DESCRIPTION N DL7500P ¡5 a 1 310 nm pulsed laser diode, that has a newly developed M ulti-Quantum Well MQW structure, DIP module

Contextual Info: Technische Information / technical information FF200R06ME3 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EconoDUAL™2 module with the trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT-Wechselrichter / IGBT-inverter

FF400R06ME3

Contextual Info: Technische Information / technical information FF400R06ME3 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Feldstop IGBT3 und Emitter Controlled3 Diode EconoDUAL™ 2 module with trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT-Wechselrichter / IGBT-inverter

FF200R12KT4

Abstract: diode T-71
Contextual Info: Technische Information / technical information FF200R12KT4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und optimierter EmCon Diode 62mm C-series module with fast trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter

BUK638-500B

Contextual Info: N AMER PHILIPS/DISCRETE bTE I> • bbS3T31 0030675 Philips semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery reverse diode, particularly suitable

Contextual Info: Technische Information / technical information BSM200GAL120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data

BSM200GAL120DLC

Contextual Info: Technische Information / technical information BSM200GAL120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data

BSM200GAL120DLC

Abstract: T3V2
Contextual Info: Technische Information / technical information BSM200GAL120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data

sharp IR3R42

Abstract: diode demodulation circuit IR3C09 IR3R42 IR3C07 40 mhz remote control transmitter circuit ir3c01 IR3C08N IR3C02A IR3R
Contextual Info: SPECIAL­ FUNCTION ICs ICs far Infrarad Remote Controllerà, Audio Equipment, Leeer Diode Drivers end Motor Drivers • ICs for Infrared Remote Controllers Supply voltage V Function Description Model No. Package Infrared signal receiver pre-amp. 1C Photo diode directly connectable

1N1743

Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Contextual Info: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:

MF0D71

Abstract: MFOD71 MFOD71 motorola MFOD71 circuit 2N4401 ITT MFOE76 MFOD75 fiber optical photo detector MC3302 MOTOROLA FIBER OPTIC
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M FO D71 Fiber O p tic s — FLCS F am ily P h o to D e te c to r Diode Output FLCS FAMILY FIBER OPTICS PHOTO DETECTOR DIODE O U TPU T . . . designed fo r low cost, short distance Fiber Optic Systems using 1000 micron core

diode smd marking jy

Abstract: smd marking 9S
Contextual Info: Schottky Barrier Diode Single Diode mtmm M2FM3 o u tlin e 30V 6A Feature »/JvSÜSMD »Small SMD • Tj=150°C > V f=0.46V >Tj=150°C » Low V f=0.46V >S lR = 0 .2 m A ' Low Ir=0.2 itiA Main Use • K ï / J J —jSJÜKilt • Reverse connect protection for

d655 e

Contextual Info: SKN 100 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ 3 [22 122 0A22 0[22 0C22 3 [22 122 0A22 0[22 0C22 =PJ3 U 022 J S 6:X 012Y ;7 U 0A2 ZMW >FG 022¥2[ >F$ 022¥2[ >FG 022¥21 >F$ 022¥21 >FG 022¥0A >F$ 022¥0A >FG 022¥0[ >F$ 022¥0[

Contextual Info: SKN 320 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ 3 B22 [22 0A22 0B22 3 B22 [22 0A22 0B22 =PJ3 U YA2 J S 6:Z 0[2¥ ;7 U 0AE ]MW >FG YA2^2B >F$ YA2^2B >FG YA2^2[ >F$ YA2^2[ >FG YA2^0A >F$ YA2^0A >FG YA2^0B >F$ YA2^0B 0122 0122 >FG YA2^01

DIODE MARKING 9X

Abstract: BZT52C24LP BZT52C10LP BZT52C11LP BZT52C5V1LP BZT52C5V6LP BZT52C6V2LP BZT52C6V8LP BZT52C7V5LP BZT52C8V2LP
Contextual Info: BZT52C5V1LP - BZT52C24LP SURFACE MOUNT ZENER DIODE Lead-free Green SPICE MODELS: BZT52C24LP BZT52C5V1LP BZT52C5V6LP BZT52C6V2LP BZT52C6V8LP BZT52C7V5LP BZT52C8V2LP BZT52C9V1LP BZT52C10LP BZT52C11LP BZT52C12LP BZT52C13LP BZT52C15LP BZT52C16LP BZT52C18LP BZT52C20LP BZT52C22LP

DIODE MARKING 9X

Abstract: BZT52C13LP
Contextual Info: BZT52C5V1LP - BZT52C24LP SURFACE MOUNT ZENER DIODE Lead-free Green SPICE MODELS: BZT52C24LP BZT52C5V1LP BZT52C5V6LP BZT52C6V2LP BZT52C6V8LP BZT52C7V5LP BZT52C8V2LP BZT52C9V1LP BZT52C10LP BZT52C11LP BZT52C12LP BZT52C13LP BZT52C15LP BZT52C16LP BZT52C18LP BZT52C20LP BZT52C22LP

diode g4l

Abstract: g4l smd
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE5S4M U n it - m m W e ig h t 0 .3 2 6 g T y p 40V 5A Feature • SM D • Tj=150°C ' SM D ' P r RS m T V ^ V Î / i S B E ' P r r s m R ating ' T j= 1 50 °C 1 H igh Io R a tin g -S m all-R K G

SR1FM-8

Abstract: SR1FM8 srifm-4 PNPN SR1FM igniter fluorescent lamp starters SRIFM
Contextual Info: MITSUBISHI PnPn SWITCH DT1A PULSE GENERATION USE LEAD-MOUNTED T YP E O U T L IN E DRAW ING D ES C R IP T IO N Dimention: mm Mitsubishi pnpn switch D T1A are molded plastic type diode thyristors for gas igniters and fluorescent lamp starters. Breakover voltage is 9S~152 V .

IN5639A

Abstract: diode LT 675 IN 407 IN6053 Zener diode IN5637A in5645a IN6036A IN5650A IN6055A IN6042A in6053a
Contextual Info: POWERZORB L13 Series 1.5KW Transient Absorption Zener Diode A range of unipolar Protection diodes in a hermetically sealed metal and glass D013 package. ; 1mS expo P max c o n t-

MRD500

Abstract: motorola MRD500 MRD510 laser diode RW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIODE O U TP U T PIN SILICO N 250 M ILLIW ATTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te ctio n , lig h t d e m o d u la tio n , d e te ctio n o f v is ib le

IXFB170N30P

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB170N30P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 300V 170A Ω 18mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings

IXFB210N20P

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB210N20P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 210A Ω 10.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB170N30P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 300V 170A Ω 18mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings

IXFB300N10P

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB300N10P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 100V 300A Ω 5.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings