DIODE A 4 W Search Results
DIODE A 4 W Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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DIODE A 4 W Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Ordering number: EN 3263 LB1105M No.3263 Monolithic Digital IC 6-Channel X 4-Unit Diode Array The LB1105M is a diode array IC th a t integrates 4 units of 6-channel diode array with anode-common configuration. It is especially suited for keyboard-use diode m atrix, OR gate applications. Replacement of |
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LB1105M LB1105M 1260TA | |
12d4
Abstract: 6da4 12d4 tube 17D4 ET-T1465 general electric
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ET-T1465 12d4 6da4 12d4 tube 17D4 ET-T1465 general electric | |
eft303
Abstract: jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151
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ERE24-ERE74 ERE24 ERE74 50HzIE Mftl80\ Eft30 19S24 I95t/R89) eft303 jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151 | |
LB1105M
Abstract: b073 LBX105M
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LB1105M LBX105M LB1105M b073 | |
EL6119
Abstract: EL6119CL EL6119CL-T13
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EL6119 EL6119 EL6119CL EL6119CL-T13 | |
EL6146
Abstract: EL6146CU-T7 MDP0040
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EL6146 EL6146 EL6146CU-T7 MDP0040 | |
Contextual Info: N AUER PHILIPS/DISCRETE L IE bbS3^31 D02b230 ‘IbM D APX BAS45L A LOW LEAKAGE DIODE FOR SURFACE MOUNTING The B A S 4 5 L is a switching diode with a very low reverse current. This S M diode is a leadless diode in a hermetically sealed SO D -8 0 envelope with lead/tin-plated metal |
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D02b230 BAS45L bb53T31 Q02b232 bb53131 Q0Eb233 | |
CTLTVS5-4
Abstract: PB CTLTVS5-4 CMKTVS5-4
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TLM1031 TLM1031 21x9x9 27x9x17 23x23x13 23x23x23 53x23x23 69x23x43 CTLTVS5-4 PB CTLTVS5-4 CMKTVS5-4 | |
SRV05-4
Abstract: 076a
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SRV05-4 SRV05-4 SRV05-4L-AG6-R SRV05-4G-AG6-R SRV05-4L-AG6-R OT-26 QW-R601-076 076a | |
NX5320EH
Abstract: NX5320EH-AZ PX10160E
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NX5320EH NX5320EH PL10660EJ01V0DS NX5320EH-AZ PX10160E | |
Thyristor ABB ys 150Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor |
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T 4512 H diode
Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
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--25-OÃ T 4512 H diode ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200 | |
Contextual Info: Central CMASH-4 SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-923 CASE MARKING CODE: A TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp. CMASH-4 is a high quality Schottky Diode designed for applications where very small size and operational efficiency are prime |
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OD-923 200mA) 13-February | |
TS DIODO
Abstract: LB1105M IC 3263 6-Channel
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LB1105M LB1105M MFP30SD 1260TA TS DIODO IC 3263 6-Channel | |
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NX6311EH-AZ
Abstract: NX6311EH PX10160E
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NX6311EH NX6311EH PL10631EJ01V0DS NX6311EH-AZ PX10160E | |
NX6311EH
Abstract: NX6311EH-AZ PX10160E
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NX6311EH NX6311EH PL10631EJ02V0DS NX6311EH-AZ PX10160E | |
PX10160EContextual Info: DATA SHEET LASER DIODE NX5320EH 1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX5320EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel |
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NX5320EH NX5320EH PX10160E | |
IR E78996
Abstract: E78996 rectifier module E78996 Diode E78996 E78996 IR IRKH136-16D25 14D20 IR E78996 135 KL23014
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IRKH136-14D20 IRKH136-16D25 IRKH142-14D20 IRKH142-16D25 IRKH142-18D28 IRKH142-20D32 IRKH162-14D20 IRKH162-16D25 170-14D20 IRKH170-16D25 IR E78996 E78996 rectifier module E78996 Diode E78996 E78996 IR 14D20 IR E78996 135 KL23014 | |
882LContextual Info: Central CFSH-4 SURFACE MOUNT SILICON SCHOTTKY DIODE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp. CFSH-4 is a high quality Schottky Diode designed for applications where ultra small size and power dissipation are prime requirements. Packaged in a Tiny Leadless Package, |
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OD-882L 200mA) OD-882L, 22-February 882L | |
ultra low reverse current schottky
Abstract: marking code L
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OD-882L 200mA) 23-May ultra low reverse current schottky marking code L | |
CMKTVS5-4Contextual Info: CMKTVS5-4 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON LOW CAPACITANCE QUAD TVS/DIODE ARRAY DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKTVS5-4 is a 4-line TVS/Diode array packaged in an ULTRAminiTM surface mount case. With its low capacitance, this |
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OT-363 IEC61000-4-2, CMKTVS5-4 | |
Contextual Info: DIODE ARRAY S 1Y A 2 0 /S 1Y A 4 0 /S 1Y A 6 0 4# • Jft "Features ¥ 4 V W f 7 >T £ i s 3 > Jf " y ~ f 2 L tz 7 4 * — K T w 4 X ~ f0 • X h £> J: -5 a x L tz0 • S1YA series are diode arrays consist of two individual glass passivated diodes similar to 1N4003. |
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1N4003. | |
NJW4710
Abstract: NJW4710VE1
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NJW4710 NJW4710 NJW4710VE1 200MHz 500MHz SSOP24-E1 375TYP NJW4710VE1 | |
NJW4710
Abstract: NJW4710VE1
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NJW4710 NJW4710 NJW4710VE1 200MHz 500MHz SSOP24-E1 375TYP NJW4710VE1 |