EL6119
Abstract: EL6119CL EL6119CL-T13
Text: EL6119 Data Sheet Dual 4-Channel Laser Diode Driver + Oscillator The EL6119 is a dual four-channel laser diode current amplifier that provides controlled current to both a CD and DVD laser diode. Channels 2, 3, and 4 should be used as the write channels, with switching speeds of
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EL6119
EL6119
EL6119CL
EL6119CL-T13
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EL6146
Abstract: EL6146CU-T7 MDP0040
Text: EL6146 Data Sheet June 15, 2004 4-Channel Laser Diode Driver + Oscillator Features The EL6146 is a four channel laser diode current amplifier that provides controlled current to a grounded laser diode. Channels 2, 3, and 4 must be used as the write channels, with switching speeds of approximately one
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EL6146
EL6146
EL6146CU-T7
MDP0040
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CTLTVS5-4
Abstract: PB CTLTVS5-4 CMKTVS5-4
Text: Product Brief CTLTVS5-4 TLM1031 Ideal for Low Capacitance, Quad TVS/Diode Array in TLM1031 package USB 3.0 Top View Bottom View Typical Electrical Characteristics Central Semiconductor’s CTLTVS5-4 is a 4-line TVS/Diode array packaged in a TLM1031 surface mount case. With its ultra
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TLM1031
TLM1031
21x9x9
27x9x17
23x23x13
23x23x23
53x23x23
69x23x43
CTLTVS5-4
PB CTLTVS5-4
CMKTVS5-4
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SRV05-4
Abstract: 076a
Text: UNISONIC TECHNOLOGIES CO., LTD SRV05-4 Preliminary DIODE LOW CAPACITANCE TVS DIODE ARRAY DESCRIPTION The UTC SRV05-4 is a low capacitance TVS diode array, it uses UTC’s advanced technology to provide customers with low leakage current and low clamping voltage, etc.
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SRV05-4
SRV05-4
SRV05-4L-AG6-R
SRV05-4G-AG6-R
SRV05-4L-AG6-R
OT-26
QW-R601-076
076a
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NX5320EH
Abstract: NX5320EH-AZ PX10160E
Text: LASER DIODE NX5320EH 1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX5320EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel
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NX5320EH
NX5320EH
PL10660EJ01V0DS
NX5320EH-AZ
PX10160E
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Untitled
Abstract: No abstract text available
Text: Central CMASH-4 SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-923 CASE MARKING CODE: A TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp. CMASH-4 is a high quality Schottky Diode designed for applications where very small size and operational efficiency are prime
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OD-923
200mA)
13-February
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CMXESD70-4
Abstract: No abstract text available
Text: CMXESD70-4 SURFACE MOUNT SILICON LOW CAPACITANCE ESD PROTECTION QUAD LINE DIODE ARRAY w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXESD70-4 is a 4-line silicon diode array packaged in a SUPERminiTM surface mount case. This device, with its low
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CMXESD70-4
CTV70
OT-26
IEC61000-4-2:
TCMXESD70-4
28-November
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Untitled
Abstract: No abstract text available
Text: RURD4120S9A_SB82080 Data Sheet March 2005 4 A, 1200 V, Ultrafast Diode Features • Stealth Recovery trr = 90 ns @ IF = 4 A The RURD4120S9A is an Ultrafast Diode with low forward voltage drop. This device is intended for use as freewheeling and clamping Diodes in a variety of
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RURD4120S9A
SB82080
UR4120
O-252
SB82s
RURD4120
SB82080
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CTLTVS5-4
Abstract: No abstract text available
Text: CTLTVS5-4 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON LOW CAPACITANCE QUAD TVS/DIODE ARRAY DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLTVS5-4 is a 4-line TVS/Diode array packaged in a TLM1031 surface mount case. With its ultra low capacitance, this
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TLM1031
TLM1031
19-August
CTLTVS5-4
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NX6311EH-AZ
Abstract: NX6311EH PX10160E
Text: LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel
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NX6311EH
NX6311EH
PL10631EJ01V0DS
NX6311EH-AZ
PX10160E
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NX6311EH
Abstract: NX6311EH-AZ PX10160E
Text: LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel
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NX6311EH
NX6311EH
PL10631EJ02V0DS
NX6311EH-AZ
PX10160E
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PX10160E
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5320EH 1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX5320EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel
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NX5320EH
NX5320EH
PX10160E
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marking code sot-26 3.3v
Abstract: CMXESD70-4
Text: CMXESD70-4 SURFACE MOUNT SILICON LOW CAPACITANCE ESD PROTECTION 4-LINE DIODE ARRAY w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXESD70-4 is a 4-line silicon diode array packaged in the SOT-26 surface mount case. This device, with its low capacitance,
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CMXESD70-4
OT-26
CTV70
IEC61000-4-2:
CTV70
marking code sot-26 3.3v
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882L
Abstract: No abstract text available
Text: Central CFSH-4 SURFACE MOUNT SILICON SCHOTTKY DIODE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp. CFSH-4 is a high quality Schottky Diode designed for applications where ultra small size and power dissipation are prime requirements. Packaged in a Tiny Leadless Package,
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OD-882L
200mA)
OD-882L,
22-February
882L
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 3263 LB1105M No.3263 Monolithic Digital IC 6-Channel X 4-Unit Diode Array The LB1105M is a diode array IC th a t integrates 4 units of 6-channel diode array with anode-common configuration. It is especially suited for keyboard-use diode m atrix, OR gate applications. Replacement of
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LB1105M
LB1105M
1260TA
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12d4
Abstract: 6da4 12d4 tube 17D4 ET-T1465 general electric
Text: 6DA4 12D4 17D4 6 D A 4 — 12D4— 17D4 DIODE TUBES ET-T1465 Page 1 4-57 FOR TV DAMPING DIODE APPLICATIONS DESCRIPTION AND RATING The 6DA4 is a single heater-cathode type diode for service as the damping diode in the horizontal-deflection circuit of television receivers. It will with
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ET-T1465
12d4
6da4
12d4 tube
17D4
ET-T1465
general electric
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eft303
Abstract: jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151
Text: E R E 2 4 ' E R E 7 4 2 o a X ± ' < T? - 9 4 * - Y FAST RECOVERY DIODE Features • H7 7 * • a Glass passivated chip Stud mounted *. Applications • Switching power supplies • ft' fJi' Free-wheel diode • ' <7— Snubber diode • Others. Maximum Ratings and Characteristics
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ERE24-ERE74
ERE24
ERE74
50HzIE
Mftl80\
Eft30
19S24
I95t/R89)
eft303
jSw Diode
diode b29
T460
ERE74
diode JSW
JSW 70
ERE24
P930
T151
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LB1105M
Abstract: b073 LBX105M
Text: Ordering number: EN 3263 Monolithic Digital 1C LB1105M 6-Channel X 4-Unit Diode Array The LB1105M is a diode array IC that integrates 4 units of 6-channel diode array with anode-common configuration. It is especially suited for keyboard-use diode matrix, OR gate applications. Replacement of
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LB1105M
LBX105M
LB1105M
b073
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE L IE bbS3^31 D02b230 ‘IbM D APX BAS45L A LOW LEAKAGE DIODE FOR SURFACE MOUNTING The B A S 4 5 L is a switching diode with a very low reverse current. This S M diode is a leadless diode in a hermetically sealed SO D -8 0 envelope with lead/tin-plated metal
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D02b230
BAS45L
bb53T31
Q02b232
bb53131
Q0Eb233
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Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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T 4512 H diode
Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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--25-OÃ
T 4512 H diode
ABB thyristor modules
T 3512 H diode
diode T 4512 H
free of LA 4508
7508H
diode T 3512 H
V10-40
vez300
CLA 80 E 1200
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TS DIODO
Abstract: LB1105M IC 3263 6-Channel
Text: O rde rin g n u m b e r: EN 3263 LB1105M No.3263 Monolithic D igital IC SA%YO 6-Channel X 4-Unit Diode Array i Ä>The LB1105M is a diode a rra y 1C th a t integrates 4 units of 6-channel diode a rra y w ith anode-common configuration. It is especially suited for keyboard-use diode m atrix, OR g ^ Î^ a p p lip tio n ^ i Replacem ent of
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LB1105M
LB1105M
MFP30SD
1260TA
TS DIODO
IC 3263
6-Channel
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IR E78996
Abstract: E78996 rectifier module E78996 Diode E78996 E78996 IR IRKH136-16D25 14D20 IR E78996 135 KL23014
Text: International H ]Rectifier Power Modules Thyristor with high voltage diode Voltage Range lT A V @ T c i f (a v (1) (2) (3) (4) Diode •TSM' >FSM (5) R th JC DC ) (3) (4) Thyristor (V) (V) (A) (°C ) 50 H z (A) IRKH136-14D20 IRKH136-16D25 IRKL136-14D20
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IRKH136-14D20
IRKH136-16D25
IRKH142-14D20
IRKH142-16D25
IRKH142-18D28
IRKH142-20D32
IRKH162-14D20
IRKH162-16D25
170-14D20
IRKH170-16D25
IR E78996
E78996 rectifier module
E78996 Diode
E78996
E78996 IR
14D20
IR E78996 135
KL23014
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PRODS 4TE D Ô3Û23Ô3 00 0 304 5 ISONY 4 SLU304VR SONY, oS~ 800/700mW High Power Laser Diode with a Detachable Fiber Description Package Outline Unit : mm S L U 3 0 4 V R is a high power laser diode based on the SLD 3 0 4 V with a detachable fiber.
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SLU304VR
800/700mW
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