transistor c4467
Abstract: mosfet a1694 C4467
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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MT-200
2SA1694/2SC4467
A1694/C4467
2SA1694
2SC4467
2SC4467
2SA1264/2SC3181
MJ2955
transistor c4467
mosfet a1694
C4467
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LM-101-A16
Abstract: No abstract text available
Text: LM-101-A16 650nm Diode Laser Module Multi purpose, high quality, low cost red laser diode module. Driver electronics included. Collimated beam output. Laser class II device Specifications 25°C Min. Optical CW Output Power PO Center Wavelength λC Output Aparture
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LM-101-A16
650nm
NP303YS
NP601SZ
LM-101-A16
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DIODE A16
Abstract: if filter 38,9 diode specification table
Text: Introduction Introduction to Filter Connectors Transient Voltage Suppression Diode Selection Guide Diode Power Selection for Lightning Strike Waveform Threats A DO 160 Waveform 1 MHz Damped Ringing Sine Level Open Circuit Voltage/ Short Circuit Current V/A
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LTC4098-3.6
Abstract: 6N16 l436 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS75B12N3T4
CEE32
1322D14
CEE326
732CF5CD
2313ECEC
1231423567896AB2CDEF1B6
54E36F
4112F
LTC4098-3.6
6N16
l436
SXA-01GW-P0.6
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a1688
Abstract: ENA1688 RJ-200
Text: RJ2003JB Ordering number : ENA1688 SANYO Semiconductors DATA SHEET RJ2003JB Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=300V . High reliability. Fast forward / reverse recovery time.
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RJ2003JB
ENA1688
A1688-3/3
a1688
ENA1688
RJ-200
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Untitled
Abstract: No abstract text available
Text: RD1006LS-SB5 Ordering number : ENA1608 SANYO Semiconductors DATA SHEET RD1006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.
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RD1006LS-SB5
ENA1608
A1608-3/3
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Untitled
Abstract: No abstract text available
Text: RD0506LS-SB5 Ordering number : ENA1611 SANYO Semiconductors DATA SHEET RD0506LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.
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RD0506LS-SB5
ENA1611
A1611-3/3
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Untitled
Abstract: No abstract text available
Text: RD1006LS-SB5 Ordering number : ENA1608 SANYO Semiconductors DATA SHEET RD1006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.
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RD1006LS-SB5
ENA1608
A1608-3/3
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RD1006LS-SB
Abstract: No abstract text available
Text: RD1006LS-SB5 Ordering number : ENA1608 SANYO Semiconductors DATA SHEET RD1006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.
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RD1006LS-SB5
ENA1608
A1608-3/3
RD1006LS-SB
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Untitled
Abstract: No abstract text available
Text: RD2006LS-SB5 Ordering number : ENA1613 SANYO Semiconductors DATA SHEET RD2006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.
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RD2006LS-SB5
ENA1613
A1613-3/3
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RD2006
Abstract: No abstract text available
Text: RD2006LS-SB5 Ordering number : ENA1613 SANYO Semiconductors DATA SHEET RD2006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.
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RD2006LS-SB5
ENA1613
A1613-3/3
RD2006
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Untitled
Abstract: No abstract text available
Text: RD0506LS-SB5 Ordering number : ENA1611 SANYO Semiconductors DATA SHEET RD0506LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.
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RD0506LS-SB5
ENA1611
A1611-3/3
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Untitled
Abstract: No abstract text available
Text: RD0506LS-SB5 Ordering number : ENA1611 SANYO Semiconductors DATA SHEET RD0506LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.
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RD0506LS-SB5
ENA1611
A1611-3/3
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RD1004
Abstract: a1615 RD1004LS-SB5 rd1004ls RD1004LS-SB
Text: RD1004LS-SB5 Ordering number : ENA1615 SANYO Semiconductors DATA SHEET RD1004LS-SB5 Diffused Junction Type Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. Easy to be mounted, good heat dissipation.
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RD1004LS-SB5
ENA1615
A1615-3/3
RD1004
a1615
RD1004LS-SB5
rd1004ls
RD1004LS-SB
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P035H
Abstract: IRFP250 HFA50PA60C
Text: PD -95688A HFA50PA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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-95688A
HFA50PA60CPbF
112nC
HFA50PA60C
A16PA60C
P035H
P035H
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD -95688A HFA50PA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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-95688A
HFA50PA60CPbF
112nC
HFA50PA60C
08-Mar-07
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P035H
Abstract: HFA50PA60C IRFP250
Text: PD -95688A HFA50PA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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-95688A
HFA50PA60CPbF
112nC
HFA50PA60C
12-Mar-07
P035H
IRFP250
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Untitled
Abstract: No abstract text available
Text: SBT150-06JS Ordering number : ENA1652 SANYO Semiconductors DATA SHEET SBT150-06JS Schottky Barrier Diode Twin Type • Cathode Common 60V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features
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SBT150-06JS
ENA1652
A1652-3/3
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A1653
Abstract: No abstract text available
Text: SBT250-04JS Ordering number : ENA1653 SANYO Semiconductors DATA SHEET SBT250-04JS Schottky Barrier Diode Twin Type • Cathode Common 40V, 25A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features
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SBT250-04JS
ENA1653
A1653-3/3
A1653
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A1658
Abstract: No abstract text available
Text: SBR250-10JS Ordering number : ENA1658 SANYO Semiconductors DATA SHEET SBR250-10JS Schottky Barrier Diode Twin Type • Cathode Common 100V, 25A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features
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SBR250-10JS
ENA1658
A1658-3/3
A1658
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d1609
Abstract: No abstract text available
Text: SBT700-06RH Ordering number : ENA1635 SANYO Semiconductors DATA SHEET SBT700-06RH Schottky Barrier Diode Twin Type • Cathode Common 60V, 70A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features
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SBT700-06RH
ENA1635
A1635-3/3
d1609
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2N3904
Abstract: LM84 LM84CIMQA LM84CIMQAX
Text: & Semiconductor LM84 Diode Input Digital Temperature Sensor with Two-Wire Interface General Description The LM 84 is a rem ote diode tem perature sensor, D elta-Sigm a analog-to-digital converter, and digital o ver-tem perature detector with an SMBus interface. The
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2N3904.
2N3904
LM84
LM84CIMQA
LM84CIMQAX
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marking JT
Abstract: 28 MARKING Q62702-A77
Text: BAS 28 Silicon Switching Diode Array • • For high-speed switching Electrically isolated diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package BAS 28 JT Q62702-A163 Q62702-A77 SOT 143 Maximum ratings Parameter
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Q62702-A163
Q62702-A77
I-150
marking JT
28 MARKING
Q62702-A77
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a16852
Abstract: HA16852MP Hitachi Scans-001
Text: HA16852MP Optical Communication Receiver/Amplifier The HA16852M P is a receiving amplifier-IC for digital data re ceiver via optical fiber. The circuit includes a main Amplifier, comparator, TTL output and ECL output stage, in a mini-square Package. The H A16852M P is advisable to use simultaneously photo-Diode
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HA16852MP
HA16852MP
A16852M
18-pins
MP-18
a16852
Hitachi Scans-001
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