7121
Abstract: MMBD2838
Text: MMBD2838 MMBD2838 Connection Diagram 3 3 3 A6. 2 1 2 1 1 2 SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current
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MMBD2838
OT-23
7121
MMBD2838
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Untitled
Abstract: No abstract text available
Text: MMBD2838 MMBD2838 Connection Diagram 3 3 3 A6. 2 1 2 1 1 2 SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current
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MMBD2838
OT-23
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Untitled
Abstract: No abstract text available
Text: BAS16 BAS16 Connection Diagram 3 3 3 A6 2 1 2 1 1 2NC SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 85 V IF AV Average Rectified Forward Current 200
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BAS16
OT-23
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BAS16
Abstract: BAS16 fairchild
Text: BAS16 BAS16 Connection Diagram 3 3 3 A6 2 1 2 1 1 2NC SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 85 V IF AV Average Rectified Forward Current 200
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BAS16
OT-23
BAS16
BAS16 fairchild
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1N4150
Abstract: BAS16 BAV99 MMBD1201 A6 SOT-23
Text: BAS16 BAS16 CONNECTION DIAGRAM 3 3 3 A6 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV Working Inverse Voltage
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BAS16
OT-23
BAV99
1N4150
BAS16
MMBD1201
A6 SOT-23
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EV10CS140TP-EB
Abstract: EVX10CS140TPY EV10CS140
Text: EV10CS140 10-bit 3.0 Gsps 1:4 DMUX Datasheet Main Features • • • • • • High-speed ADC Family Companion Chip 10-bit Data Additional 11th Bit in Simultaneous Mode Example: for Out-of-Range Bit Staggered or Simultaneous Data Outputs Selectable 1:4 or 1:2 Demultiplexed Digital LVDS Outputs
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EV10CS140
10-bit
EV10CS140TP-EB
EVX10CS140TPY
EV10CS140
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DIODE A7N
Abstract: No abstract text available
Text: EV10CS140 10-bit 3.0 Gsps 1:4 DMUX Datasheet Main Features • • • • • • High-speed ADC Family Companion Chip 10-bit Data Additional 11th Bit in Simultaneous Mode Example: for Out-of-Range Bit Staggered or Simultaneous Data Outputs Selectable 1:4 or 1:2 Demultiplexed Digital LVDS Outputs
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EV10CS140
10-bit
1007B
DIODE A7N
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Untitled
Abstract: No abstract text available
Text: FDP8440 N-Channel PowerTrench MOSFET tm 40V, 277A, 2.2mΩ Features Application • RDS on = 1.64mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids
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FDP8440
345nC
O-220
FDP8440
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FDP8440
Abstract: No abstract text available
Text: FDP8440 N-Channel PowerTrench MOSFET tm 40V, 277A, 2.2mΩ Features Application • RDS on = 1.64mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids
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FDP8440
345nC
O-220
FDP8440
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SAS2008
Abstract: No abstract text available
Text: TH7888A Area Array CCD Image Sensor 1024 x 1024 Pixels with Antiblooming Datasheet 1. Features • • • • • • • • • • 1024 x 1024 Pixels with Memory Zone Up to 30 Images/Second Built-in Antiblooming Device Providing an Electric Shutter Function
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TH7888A
TH7888A
0897B
SAS2008
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y703
Abstract: TH7888AVRHRB e2v ccd SAS 251
Text: TH7888A Area Array CCD Image Sensor 1024 x 1024 Pixels with Antiblooming Datasheet 1. Features • • • • • • • • • • 1024 x 1024 Pixels with Memory Zone Up to 30 Images/Second Built-in Antiblooming Device Providing an Electric Shutter Function
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TH7888A
TH7888A
0897C
y703
TH7888AVRHRB
e2v ccd
SAS 251
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EV10AS150
Abstract: diode t25 4 A8 EBGA317 EV10AS150TP-EB EVX10AS150TP 10 GSPS ADC FR4 diode t25 4 A9
Text: EV10AS150 High Linearity ADC 10-bit 2.5 Gsps with 1:4 DMUX 4.5 GHz Full Power Bandwidth Datasheet Summary Main Features • ADC 10-bit Resolution • Up to 2.5 Gsps Sampling Rate • Selectable 1:4 or 1:2 Demultiplexed Digital LVDS Outputs Performance • Single Tone Performance in 1st Nyquist –1 dBFS
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EV10AS150
10-bit
0954BS
EV10AS150
diode t25 4 A8
EBGA317
EV10AS150TP-EB
EVX10AS150TP
10 GSPS ADC FR4
diode t25 4 A9
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semikron thyristor
Abstract: SCHEMATIC circuit scr H-Bridge "IGBT h-bridge" scr h-bridge IGBT ac switch circuit SK100KQ12 SK100KQ16 3 phase motor inverters circuit diagram igbt applications of mos controlled thyristor SKKT5616E
Text: Semikron Thyristor, Diode and IGBT Modules SEMIKRON invented the SEMIPACK¨, the beginning of a new industry standard for isolated power semiconductor modules. The SEMIKRON power modules represent quality, continued innovation and engineering know-how that reduce
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25GB063
45GB063
30GB123
25GD063
45GD063
20GD123
15GH063
25GH063
45GH063
20GH123
semikron thyristor
SCHEMATIC circuit scr H-Bridge
"IGBT h-bridge"
scr h-bridge
IGBT ac switch circuit
SK100KQ12
SK100KQ16
3 phase motor inverters circuit diagram igbt
applications of mos controlled thyristor
SKKT5616E
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ag2001
Abstract: an 6710 squib driver TLE6710 FIRING squib EN12 ZP11 ZP12 ZP22 squib
Text: TLE 6710 Airbag Combined Power-Supply and Firing Circuit Datasheet Copying of this document, and giving it to others and the use or communication of the contents thereof, are forbidden without express authority. Offenders are liable to the payment of damages. All rights are reserved in the event of the grant of a patent or the registration of a utility model.
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74ALVC162835
Abstract: 74ALVC162835A
Text: INTEGRATED CIRCUITS 74ALVC162835A 18-bit registered driver with 30Ω termination resistors 3-State Product specification Replaces datasheet 74ALVC162835 of 1999 Mar 18 IC24 Data Handbook Philips Semiconductors 2000 Mar 14 Philips Semiconductors Product specification
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74ALVC162835A
18-bit
74ALVC162835
74ALVC162835A
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74ALVC162834
Abstract: 74ALVC162834A
Text: INTEGRATED CIRCUITS 74ALVC162834A 18-bit registered driver with inverted register enable and 30Ω termination resistors 3-State Product specification Replaces datasheet 74ALVC162834 of 2000 Jan 03 IC24 Data Handbook Philips Semiconductors 2000 Mar 14 Philips Semiconductors
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74ALVC162834A
18-bit
74ALVC162834
74ALVC162834A
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STV7618
Abstract: No abstract text available
Text: STV7618 PLASMA DISPLAY PANEL DATA DRIVER FEATURES • ■ ■ ■ ■ ■ ■ 96 Outputs Plasma Display Driver 90V Absolute Maximum Rating 3.3V / 5V Compatible Logic -40 / 30 mA Source / Sink Output MOS 3 or 6 Bit Data Bus 40 MHz BCD Process Packaging Adapted to Customer’s Request
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STV7618
STV7618/WAF
STV7618
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D10N diode
Abstract: D13N TECHNICAL DATA d9n diode d9n zener r2r resistor ladder TX-2-5-1 TC2411 TC2411-IB TC2411-KIT TP33
Text: Datasheet Advance Information TC2411 14-Bit, 1 GSPS Digital-to-Analog Converter with Standby Mode of Operation The TC2411 is a 14-bit, 1 GSPS digital-to-analog converter that delivers exceptional high-frequency performance. The TC2411 is designed to support
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TC2411
14-Bit,
TC2411
MKDSTC2411
D10N diode
D13N TECHNICAL DATA
d9n diode
d9n zener
r2r resistor ladder
TX-2-5-1
TC2411-IB
TC2411-KIT
TP33
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EV10AQ190
Abstract: transistor b9n EVX10AQ190TPY EV10AQ190TPY-EB dioda C5N A7N transistor H1 dioda a2n dioda ncc7 DIODE A7N
Text: EV10AQ190 Low power QUAD 10-bit 1.25 Gsps ADC Datasheet Summary Main Features • Quad ADC with 10-bit Resolution using True e2v Single Core Technology • • • • • • • • • • – 1.25 Gsps Sampling Rate in Four-channel Mode – 2.5 Gsps Sampling Rate in Two-channel Mode
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EV10AQ190
10-bit
0952BS
EV10AQ190
transistor b9n
EVX10AQ190TPY
EV10AQ190TPY-EB
dioda C5N
A7N transistor
H1 dioda
a2n dioda
ncc7
DIODE A7N
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21B22564-40S10B-01G
Abstract: vga cable lg.philips 21B22564-06S10B-01G AN97076 LB064V02-A1 1473005-1 SAJ100 21B22564-06S10B P8562-06S10-01G LB064V02A1
Text: high performance low power computing Colibri Evaluation Board Datasheet Toradex AG l Altsagenstrasse 5 l 6048 Horw l Switzerland l +41 41 340 80 85 l www.toradex.com l info@toradex.com Colibri Evalboard Datasheet Revision History Date Doc. Rev. Colibri Evalboard
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74AVC16834
Abstract: PCK2509S PCK2510S
Text: INTEGRATED CIRCUITS 74AVC16834 18-bit registered driver with inverted register enable 3-State Preliminary specification Replaces datasheet 74AVC16834/74AVCH16834 dated 1998 Dec 11 Philips Semiconductors 1999 Jul 23 Philips Semiconductors Preliminary specification
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74AVC16834
18-bit
74AVC16834/74AVCH16834
74AVC16834
PCK2509S
PCK2510S
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74AS573
Abstract: y710
Text: 1 Integrateci Circuit Systems, Inc. Preliminary Datasheet DRAM interface Buffer ICS 1350 General Description The ICS1350 is a high performance integrated circuit designed to simplify interfacing DRAMS to a data bus. Im plemented in advanced 1.5 micron double metal CMOS
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ICS1350
74AS244
74AS573
300pf
24-Lead
1350/N
y710
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C0807
Abstract: No abstract text available
Text: / FUJITSU LTD S3E T> Lp V 3 •j 7 374T7St. 0 G 0 2 4 b 3 T7b » F C A J January 1991 Edition 1.0 FUjlTSU DATASHEET: MB71C256-25/-35 PROGRAMMABLE BICMOS 262 ,144-BIT READ ONL Y MEMORY B IC M O S 262,144 BIT D EAP PRO M 32,768 W O R D x 8 BITS The Fujitsu MB71C256 is high speed BICMOS TTL electrically lield programmable
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374T7St.
MB71C256-25/-35
144-BIT
MB71C256
C0807
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR FEATURES DS2219 N onvolatile D R AM Stik 1 M x 9 PIN ASSIGNMENT • Maintains data in the absence of system power o • Compatible with existing DRAM SIMM applications • Normal operating mode completely unaffected • Nonvolatile circuitry transparent and independent
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DS2219
30-position
10-volt
1024K
30-Pin
DS2219
S2219
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