DIODE A46
Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
Text: 1996-2012:QuarkCatalogTempNew 9/20/12 3:44 PM Page 1996 INTERCONNECT TEST & MEASUREMENT 25 SEMIPACK Isolated Diode/Diode and Thyristor/Diode Modules SEMIPACK® Isolated Diode/Diode and Single Diode Modules 27 Amp to 700 Amp RoHS SKKD 46/16 Stock No. Mfr.’s
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IRFP250
Abstract: HFA16TA60CS 94059
Text: PD -96038 HEXFRED HFA16TA60CSPbF TM Ultrafast, Soft Recovery Diode Features 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA16TA60CSPbF
HFA16TA60CS
12-Mar-07
IRFP250
94059
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HFA16TA60C
Abstract: No abstract text available
Text: PD-95739 HFA16TA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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PD-95739
HFA16TA60CPbF
HFA16TA60C
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD -96038 HEXFRED HFA16TA60CSPbF TM Ultrafast, Soft Recovery Diode Features 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA16TA60CSPbF
HFA16TA60CS
HFA16T
A60CS
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P035H
Abstract: IRFP250 HFA50PA60C
Text: PD -95688A HFA50PA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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-95688A
HFA50PA60CPbF
112nC
HFA50PA60C
A16PA60C
P035H
P035H
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD -96038 HEXFRED HFA16TA60CSPbF TM Ultrafast, Soft Recovery Diode Features 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA16TA60CSPbF
HFA16TA60CS
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD -95688A HFA50PA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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-95688A
HFA50PA60CPbF
112nC
HFA50PA60C
08-Mar-07
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P035H
Abstract: HFA50PA60C IRFP250
Text: PD -95688A HFA50PA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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-95688A
HFA50PA60CPbF
112nC
HFA50PA60C
12-Mar-07
P035H
IRFP250
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HFA16TA60C
Abstract: IRFP250 HFA16TA60CPBF
Text: PD-95739 HFA16TA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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PD-95739
HFA16TA60CPbF
HFA16TA60C
12-Mar-07
IRFP250
HFA16TA60CPBF
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HFA16TA60C
Abstract: IRFP250
Text: PD-95739 HFA16TA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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PD-95739
HFA16TA60CPbF
HFA16TA60C
performan01
HFA16TA60C
IRFP250
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diode a60
Abstract: ISPA60
Text: ISOCOM COMPONENTS ISPA60 DESCRIPTION The ISPA60 is a 1-Form A solid state relay in a space saving 4 pin DIL package. The ISPA60 utilises MOSFET technology that is optically coupled to a highly efficient GaAlAs infrared light emitting diode. A60 FEATURES •
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ISPA60
ISPA60
75kVRMS
DC93080
diode a60
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C2E1
Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
Text: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max
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QCA75A/QCB75A40/60
E76102
QCA75A
QCB75A
94max
VCEX400/600V
32max
31max
110TAB
Ic75A
C2E1
QCA75A40
QCA75A60
QCB75A40
QCB75A60
diode a60
ib25ab
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C2E1
Abstract: transistor QCA75A60 QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX
Text: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max
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QCA75A/QCB75A40/60
E76102
QCA75A
QCB75A
94max
VCEX400/600V
32max
31max
110TAB
Ic75A
C2E1
transistor QCA75A60
QCA75A40
QCA75A60
QCB75A40
QCB75A60
94MAX
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E2 diode
Abstract: Diode B2x
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
110TAB
94max
32max
31max
35max
400/600V
E2 diode
Diode B2x
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Untitled
Abstract: No abstract text available
Text: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC
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PD-96032
HFA30TA60CSPbF
HFA30TA60CS
HFA30T
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A6010
Abstract: A6010 CMOS sensor ADNS-6010 native IC A6010 AV02-1410EN Avago cross
Text: ADNS-6010 Laser Mouse Sensor Data Sheet Description Features The Avago Technologies ADNS-6010 sensor along with the ADNS-6120 or ADNS-6130-001 lens, ADNS-6230001 clip and ADNV-6340 laser diode form a complete and compact laser mouse tracking system. It is the
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ADNS-6010
ADNS-6120
ADNS-6130-001
ADNS-6230001
ADNV-6340
AV02-1410EN
A6010
A6010 CMOS sensor
ADNS-6010 native
IC A6010
Avago cross
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zener diode A36
Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ23C2V7
CAZ23C51
OT-23
MIL-STD-202,
J-STD-020C
CAZ23CXVX
zener diode A36
zener diode A29
ZENER A29
a37 zener
diode ZENER A26
a36 zener
ZENER A34
CAZ23C24
a59 zener diode
ZENER A26
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HFA30TA60CS
Abstract: IRFP250 hfa30ta60cspbf
Text: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC
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PD-96032
HFA30TA60CSPbF
HFA30TA60CS
12-Mar-07
IRFP250
hfa30ta60cspbf
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bap64-03
Abstract: lm 9805 DIODE ED 99
Text: DISCRETE SEMICONDUCTORS Æm SIHIEET BAP64-03 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-03 PINNING FEATURES • High voltage, curre n t controlled.
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BAP64-03
BAP64-03
lm 9805
DIODE ED 99
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BAP64-05
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Æm SIHIEET BAP64-05 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-05 PINNING FEATURES • High voltage, curre n t controlled.
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BAP64-05
BAP64-05
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BAP64-02
Abstract: v 817 y
Text: DISCRETE SEMICONDUCTORS Æ m SIHIEET BAP64-02 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-02 PINNING FEATURES • High voltage, curre n t controlled.
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BAP64-02
BAP64-02
MAM405
v 817 y
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE f.r.d FRG25CA120 UL;E76102(M) FRG25CA1 2 0 is a high speed isolated diode module designed for high power switching application. F R G 2 5 C A 1 2 0 is suitable for high frequency application requiring low loss and high speed control. • •
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FRG25CA120
E76102
FRG25CA1
200ns
7T11243
Q00202E
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diode 244
Abstract: diode 243 diode ba 244 BA244S BA244 BA243 ba 243 rf DIODE BA243 Q62702-A607 ba capacitance diode
Text: SIEM EN S BA 243 S BA 244 S Silicon RF Switching Diodes • For VHF band switching in TV tuners • Low forward resistance and low diode capacitance • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 243 S yellow Q62702-A607 DO-35 DHD
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Q62702-A607
eha07001
DO-35
Q62702-A618
0235bOS
diode 244
diode 243
diode ba 244
BA244S
BA244
BA243
ba 243 rf
DIODE BA243
ba capacitance diode
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Untitled
Abstract: No abstract text available
Text: International l R Rectifier preliminary SINGLE SWITCH IGBT DOUBLE INT-A-PAK PD-50071A G A600G D25S Standard Speed IGBT Features • S tan dard speed, op tim ized fo r ba tte ry pow ered application • V e ry low con du ction losses • H E X F R E D ™ an tipa ralle l diode s w ith ultra-soft
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PD-50071A
A600G
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