DIODE AR S1 52 Search Results

Le57D11

Abstract: Legerity SLAC L11A050AA jr223 RTX22 AM79Q021 diode AR s1 55 CD11 CD12 CD22
Contextual Info: Le57D11 Dual SLIC Device Evaluation Board User’s Guide Rev. A January 30, 2002 Document Number: 080748 The contents of this document are provided in connection with Legerity, Inc. products. Legerity makes no representations or warranties with respect to the accuracy or completeness of the

Contextual Info: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO6602

Abstract: uis test
Contextual Info: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO4629

Contextual Info: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

AO4629

Abstract: a4751 20V P-Channel Power MOSFET 500A
Contextual Info: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

AO4629L

Contextual Info: AO4629L Complementary Enhancement Mode Field Effect Transistor General Description Product Summary AO4629L uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

EUPEC Thyristor T 1059

Abstract: thyristor t 718 n thyristor T 218 N EUPEC Thyristor T 869 EUPEC t 1209 EUPEC Thyristor 1901 DIODE 4003 EUPEC T 1078 F EUPEC T 821 Emitter Turn-Off thyristor
Contextual Info: . power the Home Products N-Thyristors News Contact Editorials Job Offers Company Search Site Content VDRM,RRM max. 1800V VDRM,RRM max. 3800V VDRM,RRM max. 5200V VDRM,RRM max. 8000V Light Triggered SCRs the figures in the part-no. represent the current rating [A]

AO4803

Abstract: diode AR s1 52
Contextual Info: AO4803 30V Dual P-Channel MOSFET General Description Product Summary The AO4803 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V

AO4803A

Contextual Info: AO4803A 30V General Description Dual P-Channel MOSFET Product Summary VDS The AO4803A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V)

AO4803A

Contextual Info: AO4803A 30V Dual P-Channel MOSFET General Description Product Summary The AO4803A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V

AO4830

Contextual Info: AO4830 80V Dual N-Channel MOSFET General Description Product Summary The AO4830 uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A

Contextual Info: AO4803 30V Dual P-Channel MOSFET General Description Product Summary The AO4803 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V

ao4830

Abstract: AO4830L
Contextual Info: AO4830L Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4830L uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications.

AO6802

Abstract: Qg (nC)
Contextual Info: AO6802 30V Dual N-Channel MOSFET General Description Product Summary The AO6802 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V

Qg (nC)

Abstract: 70°C AO6810 diode AR S1 77 diode AR S1 70
Contextual Info: AO6810 30V Dual N-Channel MOSFET General Description Product Summary The AO6810 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V

AOD609

Abstract: aod609 datasheet
Contextual Info: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Contextual Info: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

M8402

Abstract: 041 DIODE
Contextual Info: S T M8402 S amHop Microelectronics C orp. P reliminary May.26 2004 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 6.2A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V

M8306

Abstract: HR ONS diode ar s1
Contextual Info: S T M8306 Green Product S amHop Microelectronics C orp. Mar.06, 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m Ω ) Max V DS S

mar-06

Abstract: STM8306 m8306 diode AR s1 52
Contextual Info: S T M8306 S amHop Microelectronics C orp. Mar.06, 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -6A

Contextual Info: S T M8500A S amHop Microelectronics C orp. J une,08 2006 ver1.2 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 55V 4.5A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V

C1C14

Abstract: Motorola AR 164
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

AON7826

Contextual Info: AON7826 20V General Description Dual N-Channel MOSFET Product Summary The AON7826 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two low RDS ON MOSFETs in a dual DFN3x3 package. The AON7826 is