DIODE B12 60 Search Results

DIODE B12 51

Abstract: TSG60N100CE IGBT 1000V .200A tsg60n100 B12 68 diode IGBT 1000V 60A
Contextual Info: TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1000 ±20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers

DIODE B12 51

Abstract: DIODE B12 B12 DIODE ultra low igss pA mosfet DIODE B12 60 p-CHANNEL MOSFET P-Channel MOSFET code 1A P-Channel mosfet 25v sop8 mosfet marking B12 diode marking code B12
Contextual Info: TSM9434 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V RDS(on)(mΩ) ID (A) 40 @ VGS = -4.5V -6.4 60 @ VGS = -2.5V -5.1 -20 Features Block Diagram ● Advance Trench Process Technology

mosfet to92

Abstract: mosfet to92 high current marking B12 diode TSM2N7000KCT-A3 low vgs mosfet to-92 TSM2N7000KCT
Contextual Info: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS V 60 Features RDS(on)(Ω) ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ●

DIODE B12 41

Abstract: TSG25N120CN B12 DIODE
Contextual Info: TSG25N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 25 General Description The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers

DIODE B12

Abstract: B12 DIODE TSG15N120CN
Contextual Info: TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers

TSG40N120CE

Abstract: to264 B12 DIODE IGBT 40A TSG40N DIODE b12 28 DIODE B12 88 DIODE B12
Contextual Info: TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers

DIODE B12

Abstract: B12 diode CCD77-00 DIODE B12 45 21-B12 Scientific Imaging Technologies essex 8027 e2v ccd ccd 512 x 512
Contextual Info: CCD77-00 Front Illuminated High Performance IMO Device FEATURES * 512 by 512 Image Format * Image Area 12.3 x 12.3 mm * Full-Frame Operation * 24 mm Square Pixels * Low Noise Output Amplifiers * 100% Active Area * Inverted Mode Operation APPLICATIONS * Spectroscopy

Contextual Info: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cG R lc IcM = 20 T oase = 25 /80 °C R ge T oase = 25 /80 °C; tp = 1 ms V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate V V A A V W °C V 1200 1200

Contextual Info: 600 volts class pow er transistor modules for DC chopper • P o w e r transistors and free w h e e ls are built into o ne package. • Suited fo r m o to r control ap plications using a ch o pp er co n verter Devic« ly p 'j Veso i V geo VcEO Volts Volts

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-6000-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-247AB (TO-3PAB) PACKAGE Low switching noise A C A2 Low forward voltage drop

gardena 6030

Abstract: 6060C SK6030C SK6060C SK6070C
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-6000-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-247AB (TO-3PAB) PACKAGE Low switching noise A C A2 Low forward voltage drop

Contextual Info: TESDC24V Bi-directional ESD Protection Diode Small Signal Diode SOD-323 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —Protects one birectional I/O line —Working Voltage : 24V —Pb free version, RoHS compliant, and Halogen free

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-6000-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 60 AMP SCHOTTKY BARRIER RECTIFIERS MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-247AB (TO-3PAB) PACKAGE

transistor package SOT-723

Abstract: SOT-723 723 ic
Contextual Info: 2SA2029-Q/R/S PNP bipolar Transistor Small Signal Diode SOT-723 A F B E Features Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on

Contextual Info: DIOTEC ELECTRONICS CORP DIG SflE ]> SflMTlD? D D 0 D D3 S 547 « D I X Data Sheet No.: SBDT-6000-A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 60 AMP SCHOTTKY BARRIER RECTIFIERS TQ-24I.ffîfc3Pi

VRM 12.5

Abstract: 60 AMP SCHOTTKY BARRIER RECTIFIERS SK6030C SK6040C SK6050C SK6060C SK6070C 0102-AA
Contextual Info: 204^107 □□□□□35 547 m j > I X DIOTEC ELECTRONICS CORP SÖE ]> DIOTEC ELECTRONICS CORP. D lC Data Sheet No.: SBDT-6000-A 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 ^T- O V Z l Fax: (310)767-7958 60 AMP SCHOTTKY BARRIER RECTIFIERS

26MT120

Abstract: 420 Diode 36MT160 T536 RECTIFIER T40
Contextual Info: NTC?NAT; y. ¡», HfCT ‘ H International IQ R Rectifier 5 Bridges yg ; -—. a h Port Number VRRM >0 @TC V (A) (C) >FSM FM @FM SO Hz (V) (A) (A) . . F 6OH1 R0iC(DC)'RM (A) (°C/W) (pA) Notes r a (e Deoiand Outlln« £ Key Three-Phase 26M T60 600 25

B160A

Abstract: JB16 B05A 36MB160A rkm 17 RKM 40 35MB120A 35MB20A
Contextual Info: International I ö R Rectifier Bridges V rkm V Part Number l0 @ Tc (A) (C) u VF M @ 'F M (V) (A) so H i Fax on Case Demand Outline Number Key fSM (A) 60Hz RG»CÎDC) 'RM (A) (“C/W) (m A) Notes Single Phase 2 5 0 JB 1 2 L 26M B120A 1200 25 65 1.1 40 335

diode b129

Abstract: MAX1820ZEUB
Contextual Info: 19-2011; Rev 3; 4/05 KIT ATION EVALU E L B A IL AVA WCDMA Cellular Phone 600mA Buck Regulators Features The MAX1820/MAX1821 low-dropout, pulse-width-modulated PWM DC-DC buck regulators are optimized to provide power to the power amplifier (PA) in WCDMA cell phones; however, they may be applied in many

Contextual Info: 3bE D S E M I K R O N INC V rsm • 0l3L>b71 G 0 0 2 2 4 b SEMIKRON ^.n .0-7 60 A SEMIPACK 0 Rectifier Diode Modules 38 A SKKD15 SKKE15 Ifrms m aximum values fo r continuous operation V rrm 24 A21; 28 A31 I 2 4 A 2);2 8 A 3) I I fav ( sin. 180; Tease ~ 7 1°C )

marking B12 diode SCHOTTKY

Abstract: MBRS120T3 marking b12 rectifier diode B12
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

marking B12 diode SCHOTTKY

Abstract: MBRS120T3 diode marking code B12
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

DIODE B12

Abstract: B12 diode ERB12-02 Diode Mark B12 DIODE 1.0A 1000V ERB12-10 rectifier diode B12 b12 marking erb12 general purpose diode marking code -06
Contextual Info: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1

Diode Mark B12

Abstract: B12 diode DIODE B12 marking B12 diode ERB12-02 ERB12-06 ERB12 B12 mark diode marking code B12 DIODE ERB12
Contextual Info: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1