DIODE B12 51
Abstract: TSG60N100CE IGBT 1000V .200A tsg60n100 B12 68 diode IGBT 1000V 60A
Text: TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1000 ±20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers
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TSG60N100CE
O-264
TSG60N100CE
25pcs
DIODE B12 51
IGBT 1000V .200A
tsg60n100
B12 68 diode
IGBT 1000V 60A
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DIODE B12 51
Abstract: DIODE B12 B12 DIODE ultra low igss pA mosfet DIODE B12 60 p-CHANNEL MOSFET P-Channel MOSFET code 1A P-Channel mosfet 25v sop8 mosfet marking B12 diode marking code B12
Text: TSM9434 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V RDS(on)(mΩ) ID (A) 40 @ VGS = -4.5V -6.4 60 @ VGS = -2.5V -5.1 -20 Features Block Diagram ● Advance Trench Process Technology
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TSM9434
TSM9434CS
DIODE B12 51
DIODE B12
B12 DIODE
ultra low igss pA mosfet
DIODE B12 60
p-CHANNEL MOSFET
P-Channel MOSFET code 1A
P-Channel mosfet 25v sop8
mosfet marking B12
diode marking code B12
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mosfet to92
Abstract: mosfet to92 high current marking B12 diode TSM2N7000KCT-A3 low vgs mosfet to-92 TSM2N7000KCT
Text: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS V 60 Features RDS(on)(Ω) ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ●
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TSM2N7000K
TSM2N7000KCT
mosfet to92
mosfet to92 high current
marking B12 diode
TSM2N7000KCT-A3
low vgs mosfet to-92
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DIODE B12 41
Abstract: TSG25N120CN B12 DIODE
Text: TSG25N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 25 General Description The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
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TSG25N120CN
TSG25N120CN
30pcs
DIODE B12 41
B12 DIODE
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DIODE B12
Abstract: B12 DIODE TSG15N120CN
Text: TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
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TSG15N120CN
TSG15N120CN
30pcs
DIODE B12
B12 DIODE
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TSG40N120CE
Abstract: to264 B12 DIODE IGBT 40A TSG40N DIODE b12 28 DIODE B12 88 DIODE B12
Text: TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
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TSG40N120CE
O-264
TSG40N120CE
25pcs
to264
B12 DIODE
IGBT 40A
TSG40N
DIODE b12 28
DIODE B12 88
DIODE B12
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DIODE B12
Abstract: B12 diode CCD77-00 DIODE B12 45 21-B12 Scientific Imaging Technologies essex 8027 e2v ccd ccd 512 x 512
Text: CCD77-00 Front Illuminated High Performance IMO Device FEATURES * 512 by 512 Image Format * Image Area 12.3 x 12.3 mm * Full-Frame Operation * 24 mm Square Pixels * Low Noise Output Amplifiers * 100% Active Area * Inverted Mode Operation APPLICATIONS * Spectroscopy
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CCD77-00
CCD77
DIODE B12
B12 diode
DIODE B12 45
21-B12
Scientific Imaging Technologies
essex 8027
e2v ccd
ccd 512 x 512
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-6000-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-247AB (TO-3PAB) PACKAGE Low switching noise A C A2 Low forward voltage drop
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SBDT-6000-1B
O-247AB
SK6060C
O-247
SK6030C
SK6050C
SK6060C
SK6070C
97bsbdt60
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gardena 6030
Abstract: 6060C SK6030C SK6060C SK6070C
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-6000-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-247AB (TO-3PAB) PACKAGE Low switching noise A C A2 Low forward voltage drop
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SBDT-6000-1B
O-247AB
SK6060C
O-247
SK6030C
SK6050C
SK6060C
SK6070C
97bsbdt60
gardena 6030
6060C
SK6070C
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Untitled
Abstract: No abstract text available
Text: TESDC24V Bi-directional ESD Protection Diode Small Signal Diode SOD-323 Features Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) Protects one birectional I/O line Working Voltage : 24V Pb free version, RoHS compliant, and Halogen free
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TESDC24V
OD-323
IEC61000-4-2
IEC61000-4-4
OD-323
MIL-STD-202,
C/10s
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-6000-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 60 AMP SCHOTTKY BARRIER RECTIFIERS MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-247AB (TO-3PAB) PACKAGE
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SBDT-6000-1B
O-247AB
SK6060C
O-247
SK6060C
SK6070C
97bsbdt60
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transistor package SOT-723
Abstract: SOT-723 723 ic
Text: 2SA2029-Q/R/S PNP bipolar Transistor Small Signal Diode SOT-723 A F B E Features Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on
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2SA2029-Q/R/S
OT-723
MIL-STD-202,
C/10s
31TYP
-50mA
transistor package SOT-723
SOT-723
723 ic
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DIODE B12 51
Abstract: heat exchanger power led heat sink ASM01C020 ASM14 australia heat sink ASM02C040 ASM05C060 44In42Sn14Cd
Text: Industrial Microphotonics Company CW Laser Diode Array Submodules SILVER BULLET TM • Packaged 1, 2, 3 Bar Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm PRODUCT CHARACTERISTICS The Silver BulletTM is a fundamental building block for constructing high-power diode
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785-1064nm)
laser2000
B-12/99
DIODE B12 51
heat exchanger
power led heat sink
ASM01C020
ASM14
australia heat sink
ASM02C040
ASM05C060
44In42Sn14Cd
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diode b129
Abstract: MAX1820ZEUB
Text: 19-2011; Rev 3; 4/05 KIT ATION EVALU E L B A IL AVA WCDMA Cellular Phone 600mA Buck Regulators Features The MAX1820/MAX1821 low-dropout, pulse-width-modulated PWM DC-DC buck regulators are optimized to provide power to the power amplifier (PA) in WCDMA cell phones; however, they may be applied in many
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600mA
MAX1820)
MAX1821)
13MHz
MAX1820X)
MAX1820Y)
MAX1820Z)
150mV
diode b129
MAX1820ZEUB
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marking B12 diode SCHOTTKY
Abstract: MBRS120T3 diode marking code B12
Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS120T3
marking B12 diode SCHOTTKY
MBRS120T3
diode marking code B12
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DIODE B12
Abstract: B12 diode ERB12-02 Diode Mark B12 DIODE 1.0A 1000V ERB12-10 rectifier diode B12 b12 marking erb12 general purpose diode marking code -06
Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1
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ERB12
ERB12-01
ERB12-02
ERB12-04
ERB12-06
ERB12-10
ERB12
DIODE B12
B12 diode
ERB12-02
Diode Mark B12
DIODE 1.0A 1000V
ERB12-10
rectifier diode B12
b12 marking
general purpose diode marking code -06
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Diode Mark B12
Abstract: B12 diode DIODE B12 marking B12 diode ERB12-02 ERB12-06 ERB12 B12 mark diode marking code B12 DIODE ERB12
Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1
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ERB12
ERB12-01
ERB12-02
ERB12-04
ERB12-06
ERB12-10
ERB12
Diode Mark B12
B12 diode
DIODE B12
marking B12 diode
ERB12-02
ERB12-06
B12 mark
diode marking code B12
DIODE ERB12
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Untitled
Abstract: No abstract text available
Text: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cG R lc IcM = 20 T oase = 25 /80 °C R ge T oase = 25 /80 °C; tp = 1 ms V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate V V A A V W °C V 1200 1200
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Untitled
Abstract: No abstract text available
Text: 600 volts class pow er transistor modules for DC chopper • P o w e r transistors and free w h e e ls are built into o ne package. • Suited fo r m o to r control ap plications using a ch o pp er co n verter Devic« ly p 'j Veso i V geo VcEO Volts Volts
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1DI50H-055
1DI50K-055
1DI75E-055
1DI50F
1DI50H-120
1DI75F
1I3I75H
0Q0372L,
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP DIG SflE ]> SflMTlD? D D 0 D D3 S 547 « D I X Data Sheet No.: SBDT-6000-A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 60 AMP SCHOTTKY BARRIER RECTIFIERS TQ-24I.ffîfc3Pi
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SBDT-6000-A
TQ-24I
UL94V-0
MIL-STD-202E,
000003b
SBDT-6000-B
SK6030C-6070C)
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VRM 12.5
Abstract: 60 AMP SCHOTTKY BARRIER RECTIFIERS SK6030C SK6040C SK6050C SK6060C SK6070C 0102-AA
Text: 204^107 □□□□□35 547 m j > I X DIOTEC ELECTRONICS CORP SÖE ]> DIOTEC ELECTRONICS CORP. D lC Data Sheet No.: SBDT-6000-A 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 ^T- O V Z l Fax: (310)767-7958 60 AMP SCHOTTKY BARRIER RECTIFIERS
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SBDT-6000-A
O-247
UL94V-0
MIL-STD-202E,
VRM 12.5
60 AMP SCHOTTKY BARRIER RECTIFIERS
SK6030C
SK6040C
SK6050C
SK6060C
SK6070C
0102-AA
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26MT120
Abstract: 420 Diode 36MT160 T536 RECTIFIER T40
Text: NTC?NAT; y. ¡», HfCT ‘ H International IQ R Rectifier 5 Bridges yg ; -—. a h Port Number VRRM >0 @TC V (A) (C) >FSM FM @FM SO Hz (V) (A) (A) . . F 6OH1 R0iC(DC)'RM (A) (°C/W) (pA) Notes r a (e Deoiand Outlln« £ Key Three-Phase 26M T60 600 25
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80T7I
T80KB
1KAB10EL3
26MT120
420 Diode
36MT160
T536
RECTIFIER T40
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B160A
Abstract: JB16 B05A 36MB160A rkm 17 RKM 40 35MB120A 35MB20A
Text: International I ö R Rectifier Bridges V rkm V Part Number l0 @ Tc (A) (C) u VF M @ 'F M (V) (A) so H i Fax on Case Demand Outline Number Key fSM (A) 60Hz RG»CÎDC) 'RM (A) (“C/W) (m A) Notes Single Phase 2 5 0 JB 1 2 L 26M B120A 1200 25 65 1.1 40 335
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B120A
B160A
-150C
L31for
1KAB10EL3.
D-34A
JB16
B05A
36MB160A
rkm 17
RKM 40
35MB120A
35MB20A
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Untitled
Abstract: No abstract text available
Text: 3bE D S E M I K R O N INC V rsm • 0l3L>b71 G 0 0 2 2 4 b SEMIKRON ^.n .0-7 60 A SEMIPACK 0 Rectifier Diode Modules 38 A SKKD15 SKKE15 Ifrms m aximum values fo r continuous operation V rrm 24 A21; 28 A31 I 2 4 A 2);2 8 A 3) I I fav ( sin. 180; Tease ~ 7 1°C )
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SKKD15
SKKE15
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