DIODE B2515L Search Results

B2515L

Abstract: diode B2515L
Contextual Info: MBRB2515L Preferred Device SWITCHMODE Power Rectifier OR’ing Function Diode D2PAK Surface Mount Power Package http://onsemi.com The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art

Contextual Info: MBRB2515L Preferred Device SWITCHMODE Power Rectifier OR’ing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

B2515L

Abstract: MBRB2515L MBRB2515LT4 SMD310
Contextual Info: MBRB2515L Preferred Device SWITCHMODE Power Rectifier OR'ing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

Contextual Info: MBRB2515L Preferred Device SWITCHMODE Power Rectifier OR’ing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

B2515L

Abstract: MBRB2515L MBRB2515LT4 SMD310
Contextual Info: MBRB2515L Preferred Device SWITCHMODE Power Rectifier OR’ing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

B2515LG

Contextual Info: MBRB2515L Preferred Device SWITCHMODEt Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

B2515LG

Abstract: B2515L B2515L AKA B2515 MBRB2515L MBRB2515LG MBRB2515LT4 MBRB2515LT4G
Contextual Info: MBRB2515L Preferred Device SWITCHMODEt Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBRB2515L Designer’s Data Sheet SWITCHMODE™ Power Rectifier OR’ing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial

B2515L

Abstract: MBR2515L
Contextual Info: MOTOROLA Order this document by MBR2515L/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Power Rectifier MBR2515L . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide

B2515L

Abstract: dmbr2515l diode B2515L
Contextual Info: MBR2515L SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

delta rectifier heat dissipation

Abstract: B2515L MBRB2515L SMD310 make delta rectifier B25-15 B2515
Contextual Info: MOTOROLA Order this document by MBRB2515L/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE Power Designer's MBRB2515L Rectifier OR'ing Function Diode Motorola Preferred Device D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by M BR2515L/D MBR2515L Advance Information SWITCHMODE Pow er R ectifiers . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide

B2515L

Contextual Info: MBR2515L SWITCHMODEt Power Rectifier The MBR2515L employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

B2515L

Abstract: MBR2515L B2515
Contextual Info: MBR2515L SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

MBR2515L

Abstract: MBR2515LG B2515L diode B2515L
Contextual Info: MBR2515L SWITCHMODEt Power Rectifier The MBR2515L employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

b2515l

Contextual Info: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*

Contextual Info: MOTOROLA Order this document by MBRB2515L/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet SW ITCH MODE™ Power R ectifier OR’ing Function Diode M B R B 2515L Motorola Preferred Device D2PAK Surface Mount Power Package The D2 PAK Power Rectifier employs the Schottky Barrier principle in a large

b2515

Abstract: 2515L diode B2515L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information SW ITCHMODE P o w e r R e c tifie rs M B R 2515L . . em ploying the Schottky Barrier principle in a large m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with oxide

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

B2515L

Abstract: MBR2515LG MBR2515L
Contextual Info: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* SCHOTTKY BARRIER RECTIFIER

Contextual Info: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER

B2515

Abstract: B2515L MBR2515L MBR2515LG 100-C1210
Contextual Info: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER

B2515L

Abstract: Single Schottky diode TO-220 1.0 ampere schottky power rectifier diode RECTIFIER DIODES ON Semiconductor DATA BOOK 81 210 W 20 marking CODE 91 MBR2515LG Rectifier 6 amp 200 volt rectifier diode 20 amp 800 volt MBR2515L
Contextual Info: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER

hall marking code A04

Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
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