DIODE B71 Search Results

nec laser diode

Abstract: 1992E NDL7130D1 NDL7130D 1480 nm diode laser laser diode chip NEC diode
Contextual Info: N E C ELECTRONICS INC bgE » • b427525 00380b! b71 M N E C E PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL7130D, NDL7130D1 ELECTRON DEVICE 1 4 8 0 nm OPTICAL FIBER COMM UNICATIONS InGaAsP M Q W -DC-PBH LASER DIODE DESCRIPTION NDL7130D and NDL7130D1 are 1 480 nm pumping laser diode, that has a newly developed Multi-Quantum Well MQW

1g3gt

Abstract: 1g3-gt general electric DIODE RECTIFIER P2T2 B-660 Scans-0017340 general electric
Contextual Info: iiMiAA K "m 1G3-GT <SmElBCTROñUCS r vT302° 1G3-GT diode Pa912-61 e1 DESCRIPTION A N D R A T I N G = = FOR TV HIGH-VOLTAGE-RECTIFIER APPLICATIONS The 1G3-GT is a filam entary diode designed for use in high-voltage low-current rectifier applications. It is especially

Semikron skiip 22 nab 12

Abstract: semikron skiip 31 nab 12 T 18 SKiiP 33 NEC 125 To SEMIKRON SKIIP 20 NAB 12 T 45 semikron skiip 20 nab 12 I T 38 semikron skiip 83 ec Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 Semikron skiip 30 nab 12 semikron skiip 33 NEC 125
Contextual Info: fil3bt,71 D 0 0 b 74 D B MiniSKiiP o CO motor power |kW| Designation Ä MiniSKiiP ratings for basic AC/AC circuits rectifier brake chopper l-|A| VfcES., current temp Cal M /„ sWmts sensor diode P lf 25“C inverter Rth|h* [K/W] IGBT/ CAL diode size 5,0/4,0

BY428

Abstract: ScansUX40
Contextual Info: T - O I - 1 7 Very fast parallel efficiency diode PHI LI P S I N T E R N A T I O N A L DESCRIPTION BY428 SbE D QUICK REFERENCE DATA Double-diffused glass passivated rectifier diode in a hermetically sealed, axial-leaded glass SOD64 envelope, intended for use as an

RB715F

Abstract: RB715W
Contextual Info: R B715F/R B715W Diodes_ Schottky Barrier Diode RB715FI RB715W •Applications General purpose detection High speed switching • External dimensions Units: mm R B715F R B715W •Features 1) Designed for mounting on small surface areas

SKiiP 613 GB

Contextual Info: s e m ik r d n SKiiP 312 GD 120 - 302 WT Absolute Maximum Ratings | Conditions 11 Values IGBT & Inve rse Diode V ces Operating DC link voltage Vc c 10 Theatsink ~ 25 °C lc Theatsink = 25 °C; tp < 1 ms ICM IGBT & Diode T | 3> AC, 1 min. ViSoi4) Theatsink = 25 °C

Contextual Info: s e MIKROn SKiiP 102 GD 120 - 304 WT Absolute Maximum Ratings |Conditions 1> V a lu e s Units IGBT & Inverse Diode V ces Operating DC link voltage Vcc 10 T heatsink = 25 °C lc T heatsin k = 25 °C, tp < 1 ms ICM IGBT & Diode Ti 3’ , AC, 1 min. Visol41

skiip gb 120

Contextual Info: s e M IK R D n SKiiP 402 GB 120 - 201 WT Absolute Maximum Ratings | Conditions IGBT & Inve rse Diode Vces Operating DC link voltage Vcc 11* Theatsink = 25 °C lc Theatsink = 25 °C; tp < 1 ms Icm IGBT & Diode T j3 V is o ,4» AC, 1 min. Theatsink = 25 °C

Contextual Info: SEMIKRON SKiiP 962 GB 060 - 350 W T/FT Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 600 V IGBT & Inverse Diode VcES V c c 10 O perating DC link voltage 400 V lc Theatsink —25 °C 900 A ICM Theatsink —25 °C, tp < 1 ITIS 1800 A IGBT & Diode

Contextual Info: s e MIKROn SKiiP 362 G PL 060 - 453 WT 12> Absolute Maximum Ratings S ym b o l |C o n d itio n s 1 IGBT & Inverse Diode VcES Operating D C link voltage V c c 10) Theatsink —25 °C lc Theatsink —25 °C, tp 1 ms Ic M IGBT & Diode Ti 3 ) A C, 1 min. Viso!

SDF2000H

Abstract: SANSHA SDF2000H100 SDF2000H120 SDF2000H80
Contextual Info: SANSHA E L E C T R I C MFG CO sbE » • T w an a ban dgdomss m s e h j DISC TYPE DIODE SDF2000H r - 'ù j- z z SD F2000H is a Flat Pack Diode designed for high power rectifi­ cation. • If av = 2000A, VRRM= 1200V • High Reliability by pressure mount construction.

senju m705 solder wire

Abstract: Solder bar of Senju M705 senju M705 solder paste senju 533 solder paste spec Senju M705 solder bar GM4BW53340A PL80 senju solder bar C0806 senju m705 silver less solder wire 0.5 mm
Contextual Info: - _ _ • SPEC. No. S H A R P ISSU E May- ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODEL No. GM4BW53340A CUSTOMERS' APPROVAL PRESENTED Date _ Date M rt, y m :_ f j ; 2&d~7

Contextual Info: 3bE D S E M I K R O N INC V rsm • 0l3L>b71 G 0 0 2 2 4 b SEMIKRON ^.n .0-7 60 A SEMIPACK 0 Rectifier Diode Modules 38 A SKKD15 SKKE15 Ifrms m aximum values fo r continuous operation V rrm 24 A21; 28 A31 I 2 4 A 2);2 8 A 3) I I fav ( sin. 180; Tease ~ 7 1°C )

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

SKiiP 613 GB

Contextual Info: •I filBbib?! GGD5D51 SKiiP 192 G D L170 - 471 WT Absolute Maximum Ratings Symbol | Conditions11 Values Units 1700 1200 150 300 - 5 5 . . . + 150 3500 150 300 1450 10,5 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|is °C IGBT & Inve rse Diode

Contextual Info: 5EMIKR0N SKiîP 462 GB 060 - 250 WT Absolute Maximum Ratings Symbol | Conditions 1> Values Units Operating DC link voltage Theatsink = 25 °C Theatsink = 25 'C, tp < 1 ms I G B T & Diode AC, 1 min. Theatsink = 25 °C Theatsink = 25 °Cj tp < 1 ms tp = 10 ms; sin.; T j = 150 °C

M109

Abstract: 5M470
Contextual Info: 1DI4O O M -O 5O 400 a POWER TRANSISTOR MODULE Features • hFE*'“ ^ High DC Current Gain • High speed sw itching ing Free W heeling Diode • Insulated Type •Applications • ^ 1 8 'hT A 'vT 'sV Power S w itching • A C i— AC M o to r Controls

Contextual Info: Ô13bb71 SKiiP 102 GDL 120 - 403 WT E/U Absolute Maximum Ratings Symbol Values Units 1200 900 150 300 - 5 5 . . . + 150 3000 5) 150 300 1450 10,5 V V A A °C V A A A kA2s | Conditions IGBT & Inve rse Diode V ces Operating DC link voltage Vcc 10) Theatsink —25 °C

Contextual Info: s e M IK R D n SKiiP 192 GD 170 - 371 WT Absolute Maximum Ratings Symbol | Conditions 1> Values Units 1700 1200 150 300 - 5 5 . . . + 150 4000 150 300 1450 10,5 ICM T j 3 Visoi4> If I fm Ifsm l2t Diode) Driver Vsi VS291 dv/dt Stabilized power supply Nonstabilized power supply

b711

Contextual Info: SEMIKRON SKiiP 462 GB 060 - 250 W T Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 600 V IGBT & Inverse Diode VcES V c c 10 O perating DC link voltage lc T h ea tsink ICM T h ea tsink SKiiPPACK SK integrated intelligent Power PACK halfbridge

skiip gb 120

Contextual Info: s e m ik r o n SKiiP 802 GB 120 - 401 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 800 1600 - 5 5 . . . + 150 3000 51 800 1600 8600 374 V V A A A kA2s 18 30 75 - 2 5 0 . . . + 85(70) V V kV/jiS <C | Conditions1> IGBT & Inve rse Diode V ces

SKIIP 602 GB 120 301 FT

Contextual Info: s e m ik r d n SKiiP 602 GB 120 - 301 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5 600 1200 6480 210 V V A A °C A A A kA2s 18 30 75 - 25 0 ) . . . + 85(70) V V kV/[is °C | Conditions1> IGBT & Inve rse Diode

semikron skd

Contextual Info: SEMIKRON SKiiP 1262 GB 060 - 451 W T/FT Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 600 V IGBT & Inverse Diode VcES V c c 10 O perating DC link voltage 400 V lc Theatsink —25 °C 1200 A ICM Theatsink —25 °C, tp < 1 ITIS 2400 A