DIODE B80 Search Results

B80C

Abstract: bare diode bookham diode
Contextual Info: Data sheet 80W 9xx nm High Power Bare Laser Diode Bar Features • Bare 10mm x 1.2mm laser diode bar • 80W operating power B80C-9xx-01 • Highly reliable single quantum well MBE structure The Bookham Technology B80C-9xx-01 bare laser diode bar series has been designed to provide the

SANYO DC 303

Abstract: 2SD1623 FP303 SB05-05CP MARKING 303
Contextual Info: Ordering number:EN4657 FP303 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting.

Contextual Info: Ordering number:EN4658 FC601 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composed of a Shottky barrier diode and a PNP transistor with built-in resistors, and contained in one

FC601

Abstract: RA104C marking 601 SB007-03CP sanyo fc601
Contextual Info: Ordering number:EN4658 FC601 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composed of a Shottky barrier diode and a PNP transistor with built-in resistors, and contained in one

Contextual Info: Ordering number: EN 4657 _FP303 TR : NPN Epitaxial Planar Silicon Transistor No.4657 SBD : Schottky Barrier Diode I DC-DC Converter Applications F eatures • Composite type with NPN transistor and Schottky barrier diode facilitates high-density mounting.

FC601

Contextual Info: Ordering num ber:EN4658 FC601 No.4658 TR : PN P E pitaxial P lanar Silicon T ransistor SBD : Schottky B arrier Diode 1 SAÊÊYO DC/CD Converter Applications F e a tu r e s • Composed of a Schottky b a rrier diode and a PN P transistor with built-in resistors, and contained in

Contextual Info: O rd e rin g num ber: EN 4657 FP303 No.4657 s a TR : N PN E pitaxial P lan ar Silicon T ransisto r SBD : Schottky B arrier Diode t Y O DC-DC Converter Applications F e a tu re s • Com posite type w ith N PN tran sisto r and Schottky b a rrier diode facilitates high-density m ounting.

835 431

Contextual Info: SIEMENS Silicon Tuning Diode BB 835 Preliminary data Features • Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units • High capacitance ratio Type Marking Ordering Code tape and reel BB 835 yellow X Q62702-B802 Pin Configuration

Q62702-B802

Abstract: BB835
Contextual Info: BB 835 Silicon Tuning Diode Preliminary data Features ● Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units ● High capacitance ratio Type BB 835 Marking yellow X Ordering Code tape and reel Q62702-B802 Pin Configuration

Contextual Info: SIEMENS Silicon Tuning Diode BB 835 Preliminary data Features • Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units • High capacitance ratio Type BB 835 Marking yellow X Ordering Code tape and reel Q62702-B802 Pin Configuration

Contextual Info: SIEMENS BB 835 Silicon Tuning Diode Preliminary data Features Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units High capacitance ratio 2 5:1 Type BB 835 Marking yellow X Ordering Code tape and reel 1 Q62702-B802 C Pin Configuration

BA 204-115

Abstract: BA 204115 B80C bf 204 115 110BHZ B20C 500 B80C 300 b80c 400 B250C1500B B80C-3200/2200
Contextual Info: o single phase moulded bridges ponts monophasés moulés THOMSON-CSF VRRM Type* Vrms recom­ mended V 1#5 A B 40C B80C B 125C B2 5 0 C B 380C / BY BA BB BD BF BH / B20C B40C B80C B 125C B 250C B 380C (A) 1,6 tam b = 70 °C * * 25 50 80 150 250 380 Ir per diode

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

DECT transmitter siemens

Abstract: pindiode switch L234N A03 SMD microwave transistor siemens BAR63 BAR63-03W BAR80 SIMID02 ms32 equivalent
Contextual Info: Application Note No. 007 Discrete & RF Semiconductors DECT 1.9 GHz Transmit - Receive PIN-Diode Switch DECT cordless telephones operate at frequencies between 1880 MHz and 1900 MHz. The TDMA system employed requires a non mechanical transmit-receive switch to connect the

D400 transistor

Abstract: sod343 transistor D400 microwave antenna 1500 MHz Schaffer transistors D400 AN025 D400R TR400
Contextual Info: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state

sod343

Abstract: diode V6 96 Lambda Semiconductors D400 transistor BAR63 BAR63-03W BAR80 BCR400 BCR400W D400
Contextual Info: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state

1KAB60E

Abstract: 1KAB80E B125C1000 B250C1000 B40C1000 B80C1000 1KAB100E 1KAB10E 1KAB20E 1KAB40E
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new

2SD1623

Abstract: FP303 ITR11096 SB05-05CP
Contextual Info: Ordering number:ENN4657 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode FP303 DC-DC Converter Applications Package Dimensions unit:mm 2099A [FP303] 4.5 3.4 2.8 0.5 1.8 0.5 7 6 1.0 1.5 0.5 1.57 2.5 1.0 4.25max 0.5 • Composite type with NPN transistor and Schottoky

B500C1000

Abstract: 1KAB20 B80C1000 1kab60e 1KAB60 1kab40
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new

1KAB60

Abstract: 1kab20e
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

e62320

Abstract: E 62320 26MT120A 36MB80B E.62320 26MB10B 36MB60B 36MB40B 6m 950 36MB100B
Contextual Info: Power Modules International iö r !R e c tifie r Single Phase Diode Bridges 10-35 Amps Part Number U.S. Series 'O TC VFM @ If 4 Vr r m 00 100JB05L 100JB1L 100JB2L 100JB4L 100JB6L 100JB8L 100JB10L 100JB12L 50 100 200 400 600 800 1000 1200 2 6 M B 05A 26M B10A

b20c1500

Abstract: E2733 2KBB20R B250C1500 1000 b380c1500 B250C1500 2kbb10r B80C1500 2KBB20 2KBB100R
Contextual Info: Bulletin E2733 rev. D 2KBB SERIES 1.9A single phase rectifier bridge Maximum Ratings and Characteristics 2KBB. Units 1.9 A 50Hz 50 A 60Hz 52 A 50Hz 17.7 A2s 60Hz 16.1 A2s 100 to 1000 V - 40 to 150 °C IO IFSM I2t VRRM TJ Description/Features A 1.9A single phase diode brodge rectifier assembly consisting of four

E2733

Abstract: B80C1500 b250c1500 B250C1500 1000 b380c1500 B40C1500 1000 B80C1500/1000 bridge B250c1500 2KBB40 2KBB100
Contextual Info: Bulletin E2733 rev.C 2KBB SERIES 1.9A single phase rectifier bridge Maximum Ratings and Characteristics 2KBB. Units 1.9 A 50Hz 50 A 60Hz 52 A 50Hz 17.7 A2s 60Hz 16.1 As 100 to 1000 V - 40 to 150 °C IO IFSM I2t VRRM TJ 2 Description/Features A 1.9A single phase diode brodge rectifier assembly consisting of four