Diode BAY 21
Abstract: Diode BAY 46 ir 0588
Contextual Info: A E G 17 E CORP D aaa'mab 3 q q qt t s s BAY 135 TTIILIIMllfillKiKl electronic Creative Technologies 1 01 0 Silicon Planar Diode " - - ? Applications: Protection circuits, delay circuits Features: • Very low reverse current Dimensions in mm 9i io e Cathode
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diode bay 21diode bay 46ir 0588 |
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Diode BAY 46
Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Contextual Info: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j
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1n456baw21abax12cb-102+11cb-104diode bay 46diode bay 45diode bay 21diode bay 80diode bay 19bay 73 diodediode bay 41diode bay 72diode bay 42bav 21 diode
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Diode BAY 46
Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j
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1n456baw21acb-26cb-127+13tamb100tamb125tamb60diode bay 461n 4000 diode1n3069ba224-220bav45bay41diode bay 41diode bay 80bax12sfd49
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Diode BAY 46
Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a
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1n456baw21asfd79cb-26+12baw55cb-127diode bay 46diode bay 80diode bay 74diode bay 45diode bay 19diode baw55bay 73 diode1n3595diode bay 21diode bay 41
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Diode BAY 71
Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a
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1n456baw21abaw75baw76+14bax84sfd43cb-10434/cb-104cb-127diode bay 71diode bay 45diode bay 46diode bay 88baw21esm 30701n 4009 diodebay67sfd49
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50N03
Abstract: Diode BAY 32 50N035 50N035T Bay Linear 50N035S 52A32
Contextual Info: Bay Linear Linear Excellence 50N035 N-Channel Field Effect Transistor Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications
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50n035o-22050n03diode bay 32+450n035tbay linear50n035s52a32
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60N03
Abstract: 60N035 60N035S Bay Linear 60N035T
Contextual Info: Bay Linear Linear Excellence 60N035 N-Channel Field Effect Transistor Advance Information Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications
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60n035o-22060n0360n035s+2bay linear60n035t
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MOSFET 400V TO-220
Abstract: IRF820 IRL820S IRL820T
Contextual Info: Bay Linear Linear Excellence IRF820 POWER MOSFET Advance Information Description Features • • • • • The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness.
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irf820o-220mosfet 400v to-220irl820s+1irl820t
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12N035
Abstract: 12N035T Bay Linear 12N035S
Contextual Info: Bay Linear Inspire the Linear Power 12N035 N-Channel Field Effect Transistor Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications
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12n035o-22012n035tbay linear+112n035s
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Diode BAY 19
Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
Contextual Info: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V
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baw21diode bay 19diode bay 21diode bay 80+7ir 10d diodediode bay 18diode bay 45diode bay 42bay 21bay18bay 17 diode
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Diode BAY 55
Abstract: Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86
Contextual Info: BAY 86 * BAY 87 • BAY 88 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm g 2,6 Absolute Grenzdaten Absolute maximum ratings Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7
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u-26-diode bay 55diode bay 88diode bay 21+7diode bay 45bay 88 diodebay 87 diodeu264 bu26474345bav86
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Diode BAY 21
Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Contextual Info: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j
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1n456baw21acb-26diode bay 21+9diode bay 18diode bay 32diode bay 19diode bay 12diode bay 45bay46baw32bbay18baw32d
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MI31T
Abstract: MI31TA MIB31TA Diode BAY 45
Contextual Info: MI31T MI31TA CRO INFRARED EMITTING DIODE DESCRIPTION ML31T & MIB31TA are GaAlAs infrared emitting diode molded in 3.2mm diameter clear transparent lens. 03.15 0.124 r 5.3 ( . ) 0 21 1.0(0 % ,04)-f -N\ 0.75(0.03) max. • • • A ll dim ension .in mm(inch)
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mi31tmi31taml31tmib31ta+2150mwdiode bay 45
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BAV99W A7
Abstract: BAV99VV BAS16VV BAS16W BAV70W BAV99W BAW56W BAV99W peak temperature
Contextual Info: BAS16W / BAV70W BA W 56W / BAV99W Surface M o u n t Sw itchin g Diode SW ITCHING DIODE 200-215m AMPF.RRES 70-75 VOLTS Featui-es: T o w Current Leakage *Low Forward Voltage “ Reverse Recover Time T rr*6 n s *Sm all Outline Surface Mount SOT-323 Package •
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bas16wbav70wbaw56wbav99w+8200-215mot-323t-323sc-70bav99w a7bav99vvbas16vvbav99w peak temperature
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Contextual Info: Bay Linear Inspire the Linear Power LM4041 Precision Micro power Voltage Reference Description Features The LM4041 is a two-terminal, temperature compensated, band-gap voltage reference, which provides a fixed 1.25V output for input currents between 500 µA to 5mA. The bandgap voltage 1.225V is
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lm4041ot-23 |
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B4041B
Abstract: B4041 LM4041 B4041A-2 Diode BAY 74
Contextual Info: Bay Linear Inspire the Linear Power B4041 Precision Micro power Voltage Reference Description Features The B4041 is a two-terminal, temperature compensated, band-gap voltage reference, which provides a fixed 1.25V output for input currents between 500 µA to
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b4041ot-23b4041blm4041+2b4041a-2diode bay 74
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h569-445
Abstract: H569445 ED83127-30 G-D ED83127-30 H569 T-83150-30 Diode FAJ ED83019-50 schematic symbol circuit breaker panel ED83127
Contextual Info: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 5 May 2000 2000 Lucent Technologies Product Manual Select Code 157-005-104 Comcode 108405283 Issue 5 May 2000 Lucent Technologies Secondary DC Power Distribution Bay
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h569-445h569-455h569445ed83127-30 g-d+7ed83127-30h569t-83150-30diode fajed83019-50schematic symbol circuit breaker paneled83127
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Linear Thermometer icl 7107
Abstract: ICL 7107 Application Notes ICL-7107 ICL 7107 7107 7107 display driver icl7107 applications 7107 applications 7107 Application Notes ICL7107 7106
Contextual Info: Bay Linear Inspire the Linear Power 3-1/2 Digit LCD/LED Display, A/D Converter Description Features The ICL7106 and ICL 7107 are high performance, low power 3-1/2 digit A/D converters. Included are seven segment decoders, Display drivers, a reference and a clock. The ICL
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icl7106linear thermometer icl 7107icl 7107 application notesicl-7107+7icl 710771077107 display drivericl7107 applications7107 applications7107 application notesicl7107 7106
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rxmb1
Abstract: RELAY RZ2 SUMMATION current transformer ABB rxtp 18 rxmd 2 current transformer ABB transformers of power station relay rd3 BUSBAR calculation datasheet relay 6 volt
Contextual Info: Bus differential relay using auxiliary summation CT’s REB 101 1-phase 1MRK 505 006-BEN Page 1 Issued: September 2006 Revision: C Data subject to change without notice SE970178 Features • Percentage restrained differential relay for phase-to-phase and phase-to-earth faults
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006-bense970178004-ben001-ben+13015-ben016-bense-721rxmb1relay rz2summation current transformerabb rxtp 18rxmd 2current transformer abbtransformers of power stationrelay rd3busbar calculation datasheetrelay 6 volt
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BAY99
Abstract: BAW56 Diode BAV99 SOT23 BAV70 BAY70 3PIR BAS16 BAV99 MJ marking sot23 LFL 2.25
Contextual Info: Surface M o u n t S w itching Diode SW ITCH IN G DIODE 200-215m AM PERRES 70-75 VOLTS F eatu res: *Low C urrent Leakage *Low Forward Voltage "Reverse Recover Tim e T r r* 6 n s *S m all O utline Surface M ount SOT-23 Package SOT-23 O u tlin e Dimensions unit:mm
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ot-23bav70baw56200-215m+9b\w54bay99diode bav99 sot23bay703pirbas16bav99mj marking sot23lfl 2.25
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relay rd3
Abstract: RELAY RZ2 ABB transformer rxmb1 ABB rxtp 18 abb rxmb1 BUSBAR calculation datasheet REB103 RELAY RZ2 5 ABB RXTUG 22H
Contextual Info: Bus differential relay REB 103 3-phase 1MRK 505 007-BEN SE970146 Page 1 Issued: September 2006 Revision: C Data subject to change without notice Features • Percentage restrained differential relay for phase-to-phase and phase-to-earth faults. • Very high E/F-sensitivity of the differential
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007-bense970146003-ben001-ben+15007-uen015-ben016-ben004-bense-721relay rd3relay rz2abb transformerrxmb1abb rxtp 18abb rxmb1busbar calculation datasheetreb103relay rz2 5abb rxtug 22h
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h569-445
Abstract: H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A
Contextual Info: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Secondary DC Power Distribution Bay H569-445 Notice:
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h569-445h569-445 g1faj 38ed83127-30+6ed83127-30 g-dt-83150-30848258679bdfbed83127g61a
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LM7827
Abstract: LM7805 TO263 LM7805 TO252 LM7812 to-263 LM7805 TO 263 LM7818 TO263 LM7809 application notes LM7815 d2478 LM7809
Contextual Info: Bay Linear Inspire the Linear Power LM78XX 1.5A Positive Voltage Regulator Description Features The Bay Linear LM78XX is integrated linear positive regulator with three terminals. The LM78XX offer several fixed output voltages making them useful in wide range of
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lm78xxo-252o-220o-263+10lm7827lm7805 to263lm7805 to252lm7812 to-263lm7805 to 263lm7818 to263lm7809 application noteslm7815d2478lm7809
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LM78M10
Abstract: LM78M08 LM78M15 LM78M09 Diode BAY 55 LM78M12 LM78MXX LM78M05 LM78M06 Diode BAY 96
Contextual Info: Bay Linear Inspire the Linear Power LM78MXX 500mA Positive Voltage Regulator Description Features The Bay Linear LM78MXX is integrated linear positive regulator with three terminals. The LM78MXX offer several fixed output voltages making them useful in wide range of
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lm78mxx500mao-220o-263+10o-252lm78m10lm78m08lm78m15lm78m09diode bay 55lm78m12lm78m05lm78m06diode bay 96
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