DIODE BAY 74 Search Results

Diode BAY 96

Abstract: Diode BAY 55 BAY67 RF-45 IR diodes TFK 4 TFK diode TFK diodes DIODE R 67
Contextual Info: BAY 67 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: HF-Schaltdicide Applications: Switching RF signals Abmessungen in mm Dimensions in mm g 2 ,6 . II— 11 0 0 ,5 5 — |l- — - H I — •— —-2 6 -► m -7 .2 -— —- 2 6 - -

Diode BAY 54

Contextual Info: Te m ic BAY 135 TELEFUNKEN Semiconductors Silicon Planar Diode Features • Very lo w reverse current Applications P rotection circu its, d e la y circu its Absolute Maximum Ratings Tj = 2 5 °C Param eter Test C onditions Peak reverse voltage, non repetitive

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

power supply IRF830 APPLICATION

Abstract: IRL830T IRL830 BAY 45 BAY 61 MOSFET 400V TO-220 IRF830 IRL830S Diode BAY 18 Diode BAY 45
Contextual Info: Bay Linear Linear Excellence IRF830 POWER MOSFET Advance Information Description Features The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness. The TO-220 is offered in a 3-pin is universally preferred for all

Diode BAY 55

Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
Contextual Info: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications

Diode BAY 54

Abstract: tfk 341 Diode BAY 74 TFK 68 diode Diode BAY 45 TFK 341 T 74340 TFK 101 bay 68 diode Diode BAY 68
Contextual Info: BAY 68 - BAY 69 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Sehr schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions in mm 01.9 KATHODE CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight

Diode BAY 74

Abstract: BAY74 BAV74 74 MARKING
Contextual Info: SIEM EN S Silicon Switching Diode Array BAV 74 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel BAV 74 JAs Q62702-A693 Pin Configuration Package1) 3 SOT-23 IK o CHAO7004 Maximum Ratings per Diode Parameter Symbol Values

Contextual Info: Bay Linear Inspire the Linear Power LM4041 Precision Micro power Voltage Reference Description Features The LM4041 is a two-terminal, temperature compensated, band-gap voltage reference, which provides a fixed 1.25V output for input currents between 500 µA to 5mA. The bandgap voltage 1.225V is

B4041B

Abstract: B4041 LM4041 B4041A-2 Diode BAY 74
Contextual Info: Bay Linear Inspire the Linear Power B4041 Precision Micro power Voltage Reference Description Features The B4041 is a two-terminal, temperature compensated, band-gap voltage reference, which provides a fixed 1.25V output for input currents between 500 µA to

relay rd3

Abstract: RELAY RZ2 ABB transformer rxmb1 ABB rxtp 18 abb rxmb1 BUSBAR calculation datasheet REB103 RELAY RZ2 5 ABB RXTUG 22H
Contextual Info: Bus differential relay REB 103 3-phase 1MRK 505 007-BEN SE970146 Page 1 Issued: September 2006 Revision: C Data subject to change without notice Features • Percentage restrained differential relay for phase-to-phase and phase-to-earth faults. • Very high E/F-sensitivity of the differential

WATKINS JOHNSON mixer

Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Contextual Info: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

cafs-220

Abstract: Thermotron WP-499-THCM2-705 FD-235HF CAFS-220-5M TEAC FLOPPY ST39140A testo anemometer thermalcote ST39140
Contextual Info: Thermal Airflow Considerations SECC2 OLGA HEAT SINK COOLING IN AN ATX CHASSIS February 1999 Order Number: 245139-001 Thermal Airflow Considerations Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

schematic diagram inverter 12v to 24v 30a

Abstract: inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336
Contextual Info: Allen-Bradley Parallel DC Bus Supply Configurations Using Bulletin 2364E NRUs and Bulletin 2364F RGUs Bulletin 2364P User Manual Important User Information Solid-State equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the

WP91147L8BSR

Abstract: FLUKE 8060A Fluke 8060A service manual Fluke 8060A Multimeter calibration manual SHARP KS F102 TAG C7 Thyristor TRIACS EQUIVALENT LIST FLUKE 8060a manual FLUKE Clamp meter diagram J87132B-2
Contextual Info: Product Manual J87132B-2 Select Code 169-792-100 Comcode 107940108 Issue 3 March 1998 Lucent Technologies 140-Volt, 140-Ampere, 60-Hertz Ferroresonant Rectifier Notice: Every effort was made to ensure that the information in this document was complete and accurate at the time of printing.

ASCOM 48V 150A

Abstract: KS-20472-L1S ASCOM rectifier ED83119 ed83119-30 ED83246-30 KS-22089 KS-20472 h569-429 welding rectifier schematic
Contextual Info: Product Manual H569-429 Select Code 167-792-120 Comcode 107966541 Issue 2 June 1998 Lucent Technologies 600-Ampere, 140-Volt Galaxy Control and Distribution Bay for New and Retrofit 4ESS Applications Notice: Every effort was made to ensure that the information in this

scsi cable adapter

Abstract: ibm RS/6000 software offline UPS optical disk drive SA38-0569-01 EIA-232 SA38-0569
Contextual Info: RS/6000 Enterprise Server Model F80 IBM Installation Guide SA38-0569-01 Second Edition June 2000 Before using this information and the product it supports, read the information in “Safety Notices” on page vii, Appendix B, “Environmental Notices” on page 101, and Appendix C,

ADE-208-747B

Abstract: 2SK3151 2SK3151-E PRSS0004ZE-A SC-65
Contextual Info: 2SK3151 Silicon N Channel MOS FET High Speed Power Switching REJ03G1076-0400 Previous: ADE-208-747B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

2SK3148

Abstract: 2SK3148-E PRSS0003AD-A
Contextual Info: 2SK3148 Silicon N Channel MOS FET High Speed Power Switching REJ03G1073-0200 Previous: ADE-208-748 Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline

2SK3177

Abstract: 2SK3177-E PRSS0003AD-A 2SK317
Contextual Info: 2SK3177 Silicon N Channel MOS FET High Speed Power Switching REJ03G1089-0300 Previous: ADE-208-745A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =90mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline

Contextual Info: UM10478 High-efficiency UBA3070 4-channel DC-to-DC LED driver demo board Rev. 2 — 24 May 2012 User manual Document information Info Content Keywords UBA3070, street, high bay lighting Abstract This document explains the operation and application of the UBA3070

diode rj

Abstract: RJ 22 diode
Contextual Info: SK35DGDL12T4 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper OJ:9 <J <JZ; OH:9 =' P BQ RJA -%2&'' ,.8& */'& '5& /E/&1 =' P BQ UVSW RJ <JZ;P C F <J%,+A .5 P @ +' =¥ Diode - Inverter,Chopper SEMITOP 4 3-phase bridge rectifier +

je 3055

Abstract: RAYTHEON RMWM38001 RMWP38001
Contextual Info: RMWM38001 38 GHz Mixer MMIC PRODUCT INFORMATION Description Features The RMWM38001 is a 38 GHz Mixer designed to be used in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers,