DIODE BY 399 ITT Search Results

CQP410L

Abstract: COP420L COP452 200-SK COP400 COP399N COP420 COPS
Contextual Info: COP498/COP398/COP499/COP399 National Æ jA Semiconductor COP498/COP398 Low Power CMOS RAM and Timer RAT ' COP499/COP399 Low Power CMOS Memory General Description Features The COP498/398 Low Power CMOS RAM and Timer (RAT) and the COP499/399 Memory are peripheral members of

HA 3089

Abstract: ic 7500 "Photo Interrupter" dual transistor 3045 PT photon coupled interrupter nte 3100 npn zero crossing triac FT DARLINGTON TRANSISTOR npn transistor photon coupled interrupter 3101 PT 1300 phototransistor
Contextual Info: ì mm NI T E E L E C T R O N I C S NTE TYPE WX OESCNPTtON 3039 Lite/Dark Switch -v INC 1 ?E ^ HAX SUPPLY VOUAGE DIAS NO. * K : • baiasi G O O l T b ö =1 ■ V MAX OUTPUT VOLTAGE ’ (V) HAX OUTPUT CURRENT (mA) . vcc v0UT 15 15 176 . UGHT THRESHOLD LEVEL

2SC3054

Abstract: BY 399 DIODE diode BY 399
Contextual Info: Power T ransistors 2SC3054 2SC3054 Silicon NPN Triple-Diffused Junction Mesa Darlington Type High Breakdown Voltage, High Speed Switching • Features ■ Package Dimensions • High breakdow n voltage and high reliability by glass passivation • High DC cu rren t gain hFE

Contextual Info: • 7 0 2 0 ^ DGDÖ251 IMS ■ R H H iz > ^/Sensors RPI-241 RPI-241 Photointerrupter -b > • i^ ffi^äH /D im en sio n s U nit: mm RPI-241 t h I■ 2 9 K, I ' Z 7 > i ' Z $ K5T -r ? - ^ > $ 7 ^ * V t o -f > * RPI-241 Is compact size photointerrup­ ter which adopted insert mold. IR diode

pj 809

Abstract: PJ 969 diode PJ 986 diode 047 pj 986 diode EM- 534 motor PJ 969 GE 639
Contextual Info: fffi HARRIS C iI s E M , co N D u cToB HGTH12N40C1D, HGTH12N40E1D HGTH12N50C 1D , HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features • JEDEC TO-218AC TOP VIEW 12 Amp, 400 and 500 Volt • V ce ON ‘ 2.5V Max.

Contextual Info: DUAL FVLL-BRIDGE M OTOR DRIVER As an interface between low-level logic and solenoids, brushless dc motors, or stepper motors, the UDN2998W dual full-bridge driver will operate inductive loads up to 50 V with continuous output currents of up to 2 A per bridge or peak start-up currents to 3 A. The control

Contextual Info: 2961 HIGH-C ZJBRENT HALF-BRIDGE PRINTHEAD/MOTOR DRIVER— W ITH INTERNAL CURRENT SENSING AND CONTROL The UDN2961B and UDN2961W are 3.4 A half bridges designed specifically for driving solenoid printheads, stepper motors, and dc motors. The UDN2961B/W consists of a power source driver output,

HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Contextual Info: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED

h1208

Abstract: equivalent transistor c 495 92CS-223S5 TA8340 radiosonde NYTRONICS choke Allen-Bradley carbon resistor H-1208 92CM-22389 Nytronics relay
Contextual Info: File No. 679 RF Pow er T ra n s is to rs Solid State o 8*0" 41038 750-mW, 1.68-GHz Oscillator Transistor Features: • Emitter-ballasting resistors ■ 750-rnW oscillator power at 1.68 GHz 20 V ■ Collector connected to case ■ For coaxial, stripline, and

74ls399

Abstract: 74LS398
Contextual Info: g MOTOROLA SN54LS/74LS398 SN54LS/74LS399 D E S C R IP T IO N — The S N 54 L S /7 4 L S 39 8 and S N 54 L S /7 4 L S 39 9 are Quad 2-Port Registers. They are th e logical equivalent of a quad 2-in p ut m ultiplexer follow ed by a quad 4 -bit edge-triggered register. A Common

Contextual Info: TOSHIBA MG150J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 5 0 J 1 Z S 5 0 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm 2 -/6 .4 ± 0 .3 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One

Contextual Info: 'V Latch-Up H EÏO N IJ PERFO RM A N CE LATCH-UP CIRCUIT Latch-up is cau sed by an SCR S ilico n C o n trolled R ectifier circuit. F ab rication o f CMOS integrated circuits w ith bulk silicon p ro cessin g crea tes a parasitic SCR structure. T h e b eh a v io r o f

Contextual Info: as * * DUAL 4-BIT ADDRESSABLE LACTH DESCRIPTION The T54LS256/T74LS256 is a Dual 4-Bit Addres­ sable Latch with common control inputs; these in­ clude two Address inputs Ao, A t , an active LOW Enable input (E) and an active LOW Clear input (C). Each latch has a Data input (D) and four outputs

Q609

Abstract: 2sc1844e sfp450h BBV 47 transistors AM radio q606 2SC1844-E SFP-450H UPC1322CA upd1713
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT /¿PC I 3 2 2 C A ELECTRONIC TUNING AM RADIO RECEIVER D E S C R IP T IO N T h e /¿P C 132 2C A is a silico n m o no lith ic integrated c irc u it designed fo r autom otive A M radio receivers. The ¿iP C 1 3 2 2 C A consists of 1st m ix e r, 1st o scilla to r, oscillato r buffer a m p lifie r, 2nd m ix e r, 2nd o scilla to r, IF a m p lifier,

Contextual Info: FSYE23A0D, FSYE23A0R M ay 1999 D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s File N u m b er

str-f6654 PIN CONFIGURATION

Abstract: STR-F6654 STR-f6656 diagram STRF6653 strf6676 STRF6654 str SMPS CIRCUIT DIAGRAM STRF6656 str-f6676 STR-F6600
Contextual Info: STR-F6600 Series MicroSystems Europe Ltd. SMPS PRIMARY IC. X n n K i£ 0 Features ♦ Greatly R educed Parts Count ♦ Rugged Avalanche Rated MOSFET ♦ Choice of MOSFET Voltage and Rds on ♦ Flyback Operation with Quasi-Resonant Soft Switching for Low D issipation & EM I

sem 2105 16 pin

Abstract: DQ02-1 7885M
Contextual Info: T02bfl72 DDD2173 flS2 • TH 7885M FULL FIELD CCD IMAGE SENSOR 1024x256 PIXELS MULTI-PINNED PHASE MODE MPP ■ Designed for spectroscopy. ■ Very low dark signal: 0.3 e~/pixel.sat -4 0 °C . VDD1 ^ P 4 ■ Optimized for high detectivity: output noise = 4 electrons.

81c176

Contextual Info: a Preliminary Am81C176 Advanced Micro Devices CMOS Color Palette DISTINCTIVE CHARACTERISTICS • Plug-In Replacement for Inmos G171 and G176 a Triple 6-blt Dlgital-to-Analog Converters DACs ■ RS-170A compatible RGB outputs ■ VGA hardware and software compatible

Contextual Info: MP7690 CMOS Programmable Input Range 8-Bit High Speed Analog-to-Digital Converter ¡T E X A R FEATURES BENEFITS • • • • • • • • • Reduced Board Space small package Sampling Rates from 1 kHz to 15 MHz (MSPS) DNL better than 1/2 LSB from 1 kHz to 10 MHz

diode BY 399 itt

Abstract: Q20P010 M/Q20P025
Contextual Info: DEVICE SPECIFICATION ECL/TTL “TURBO ” LOGIC ARRAYS WITH PHASE-LOCKED LOOP Q20P010/Q20P025 FEATURES On-chip high frequency phase-locked loop Up to 1.25 GHz capability Edge jitter as low as 50 ps pk-pk 900 and 3000 gates of customizable digital logic Utilizes proven Q20000* Series macro library

Contextual Info: w GEC PLESSEY OCTOBER 1996 ADVANCE INFORMATION S E M I C O N D U C T O R S KESRX01 290 - 460MHz ASK RECEIVER Supersedes Septem ber 1995 version, D S 3968 -1 .5 The KESRX01 is a single chip ASK (Amplitude Shift Key) Receiver IC. It is designed to operate in a variety of low power

Contextual Info: FSF055D, FSF055R 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 25A, 60V, ros ON = 0-020S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: MAGNUS 12 x 1.25 Gbps Parallel Optical Transmitter/Receiver PL-TCP-00-S93 Transmitter PL-RCP-00-S93 Receiver The MAGNUS parallel optical interconnect is a transmitter/ receiver pair operating with 12 channels at 1.25 Gbps for an aggregate bandwidth of 15 Gbps. The parallel modules

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors