DIODE BYQ28 Search Results

Contextual Info: BYQ28X-200 Dual ultrafast rugged rectifier diode Rev. 02 — 5 February 2009 Product data sheet 1. Product profile 1.1 General description Dual ultrafast epitaxial rectifier diodes in a SOT186A TO-220F isolated plastic package. 1.2 Features and benefits

BYQ28X-200

Abstract: BYQ28X200 BYQ28X TH92 BYQ28X-200,127
Contextual Info: BYQ28X-200 Dual ultrafast rugged rectifier diode Rev. 02 — 5 February 2009 Product data sheet 1. Product profile 1.1 General description Dual ultrafast epitaxial rectifier diodes in a SOT186A TO-220F isolated plastic package. 1.2 Features and benefits

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

Contextual Info: PREFACE NEW PRODUCTS Philips Semiconductors are working intensively on bringing new Power Diode products to the market. The products listed below appear for the first time in this data handbook. 25 V SCHOTTKY DIODES A range of low voltage schottky diodes with a reverse

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

PBYR1525CT

Abstract: "Power Semiconductor Applications" Philips "transmission Line Protection" LOW FORWARD VOLTAGE DROP DIODE RECTIFIER pbyr1525 power diode package BY479X-1700 BY559-1500 BYV116 BYV118X
Contextual Info: Philips Semiconductors Power Diodes NEW PRODUCTS Philips Semiconductors are working intensively on bringing new Power Diode products to the market. The products listed below appear for the first time in this data handbook. 25 V SCHOTTKY DIODES A range of low voltage schottky diodes with a reverse

Contextual Info: Philips Semiconductors Product specification Rectifier diodes BYQ28EB series ultrafast, rugged_ _ GENERAL DESCRIPTION Glass passivated dual epitaxial rectifier diodes in a plastic envelope suitable for surface mounting,

BYQ28

Abstract: BYQ28E Series BYQ28E diode 119
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ28E series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency rugged dual rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast

BYQ28

Abstract: BYQ28F
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast BYQ28F series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, ultra-fast recovery

BYQ28E

Abstract: BYQ28EF UG10 UGF10 BYQ28EB-200HE3
Contextual Info: BYQ28E F,B -100 thru BYQ28E(F,B)-200, UG(F,B)10BCT thru UG(F,B)10DCT Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES ITO-220AB TO-220AB • Glass passivated chip junction • Ultrafast recovery times • Soft recovery characteristics

diode BYq28

Contextual Info: SbE D • 711005b DG412DD 171 ■ P H I N BYQ28 SERIES •h i l i p s T-03'17 SbE ] international ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forw ard voltage drop, u ltra fast reverse recovery times and soft recovery characteristic. They are intended fo r

BYQ28E

Abstract: JESD22-B102 J-STD-002 ug10dct
Contextual Info: BYQ28E F,B -100 thru BYQ28E(F,B)-200, UG(F,B)10BCT Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AB TO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency

Contextual Info: BYQ28E F,B -100 thru BYQ28E(F,B)-200, UG(F,B)10BCT Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES ITO-220AB TO-220AB • Glass passivated chip junction • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency

Contextual Info: BYQ28E F,B -100 thru BYQ28E(F,B)-200, UG(F,B)10BCT Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AB TO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency

BYQ28

Abstract: BYQ28X diode BYq28
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast BYQ28X series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated dual epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, ultra-fast recovery

BYQ28E

Abstract: BYQ28EF UG10 UGF10 ug DIODE ON
Contextual Info: BYQ28E F,B -100 thru BYQ28E(F,B)-200, UG(F,B)10BCT thru UG(F,B)10DCT Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES ITO-220AB TO-220AB • Glass passivated chip junction • Ultrafast recovery times • Soft recovery characteristics

Contextual Info: N AMER PHILIPS/DISCRETE 25E D •I bh53T31 0022405 4 ■ BYQ28F SERIES T - O'S-J'7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery

Contextual Info: BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES TO-220AB ITO-220AB 2 3 1 1 BYQ28E, UG10 2 3 BYQ28EF, UGF10 PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 PIN 2

Contextual Info: BYQ28E F,B -100 thru BYQ28E(F,B)-200, UG(F,B)10BCT Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AB TO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency