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    DIODE C30 Search Results

    DIODE C30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE C30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5D 215

    Abstract: smd diode 5d smd diode marking 5d smd transistor 5d sot-23 smd transistor marking 5D CMBD914N3 N3 smd
    Text: Spec. No. : C303N3 Issued Date : 2003.04.12 Revised Date : 2006.07.05 Page No. : 1/5 CYStech Electronics Corp. High –speed switching diode CMBD914N3 Description The CMBD914N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in


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    PDF C303N3 CMBD914N3 CMBD914N3 OT-23 OT-23 500mA. UL94V-0 5D 215 smd diode 5d smd diode marking 5d smd transistor 5d sot-23 smd transistor marking 5D N3 smd

    smd diode 5H

    Abstract: SMD diode MARKING 5h smd diode sod-323 marking code 500 smd code marking 5h marking code 5H diode smd schottky diode s2 5h SMD DIODE marking JV SOD323 package CODE S2 Diode smd 5H
    Text: CYStech Electronics Corp. Spec. No. : C302S Issued Date : 2004.11.26 Revised Date : Page No. : 1/4 Small Signal Schottky diode BAT54S2 Description Planar silicon Schottky barrier diode encapsulated in a SOD-323 very small plastic SMD package. Features •Guard ring protected


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    PDF C302S BAT54S2 OD-323 OD-323 UL94V-0 smd diode 5H SMD diode MARKING 5h smd diode sod-323 marking code 500 smd code marking 5h marking code 5H diode smd schottky diode s2 5h SMD DIODE marking JV SOD323 package CODE S2 Diode smd 5H

    diode SMD code 10t

    Abstract: smd diode schottky code marking 1A N3 SOT-23 3 B S 2 C300N3 CYStech Electronics RB491DN3 Alloy 42 N3 smd Schottky Diode Marking sot-23
    Text: Spec. No. : C300N3 Issued Date : 2004.10.15 Revised Date : Page No. : 1/3 CYStech Electronics Corp. Schottky barrier diode RB491DN3 Description Planar silicon Schottky barrier diode encapsulated in a SOT-23 plastic SMD package. Features •Small surface mounting type SOT-23


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    PDF C300N3 RB491DN3 OT-23 OT-23 UL94V-0 diode SMD code 10t smd diode schottky code marking 1A N3 SOT-23 3 B S 2 C300N3 CYStech Electronics RB491DN3 Alloy 42 N3 smd Schottky Diode Marking sot-23

    IR 30S2

    Abstract: smd code marking 5h diode 30S2 30S2 RB551V-30S2 package CODE S2 SMD diode MARKING 5h smd diode 5H Diode smd 5H smd diode sod-323 marking code 03
    Text: CYStech Electronics Corp. Spec. No. : C301S2 Issued Date : 2004.02.18 Revised Date Page No. : 1/4 Small Signal Schottky Barrier diode RB551V-30S2 Description The RB551V-30S2 is a silicon Schottky barrier diode fabricated in planar technology, and encapsulated in a


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    PDF C301S2 RB551V-30S2 RB551V-30S2 OD-323 OD-323 UL94V-0 IR 30S2 smd code marking 5h diode 30S2 30S2 package CODE S2 SMD diode MARKING 5h smd diode 5H Diode smd 5H smd diode sod-323 marking code 03

    Untitled

    Abstract: No abstract text available
    Text: MV104 Silicon Tuning Diode Dual Voltage Variable Capacitance Diode This device is designed for FM tuning, general frequency control and tuning, or any top- of- the- line application requiring back-to-back diode configurations for minimum signal distortion and


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    PDF MV104 MV104/D

    MV104G

    Abstract: MV104 "back diode"
    Text: MV104 Silicon Tuning Diode Dual Voltage Variable Capacitance Diode This device is designed for FM tuning, general frequency control and tuning, or any top- of- the- line application requiring back-to-back diode configurations for minimum signal distortion and


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    PDF MV104 MV104/D MV104G MV104 "back diode"

    SMD diode MARKING 5h

    Abstract: Diode smd 5H smd code marking 5h smd diode 5H "SMD Code" 15 smd 5H transistor CMBD914N3 N3 smd
    Text: Spec. No. : C303N3 Issued Date : 2003.04.12 Revised Date Page No. : 1/4 CYStech Electronics Corp. High –speed switching diode CMBD914N3 Description The CMBD914N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package.


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    PDF C303N3 CMBD914N3 CMBD914N3 OT-23 OT-23 500mA. UL94V-0 SMD diode MARKING 5h Diode smd 5H smd code marking 5h smd diode 5H "SMD Code" 15 smd 5H transistor N3 smd

    smd diode 5d SOD-323

    Abstract: smd diode marking 5d SOD-323 smd diode code a8 smd diode marking 5d smd diode 5d DIODE SMD A8 smd transistor marking 5D MDL914S2 smd code marking A8 diode package CODE S2
    Text: CYStech Electronics Corp. Spec. No. : C303S2 Issued Date : 2003.12.11 Revised Date Page No. : 1/4 High –speed switching diode MDL914S2 Description The MDL914S2 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOD-323 plastic SMD package.


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    PDF C303S2 MDL914S2 MDL914S2 OD-323 OD-323 500mA. UL94V-0 smd diode 5d SOD-323 smd diode marking 5d SOD-323 smd diode code a8 smd diode marking 5d smd diode 5d DIODE SMD A8 smd transistor marking 5D smd code marking A8 diode package CODE S2

    diode SMD MARKING CODE A6

    Abstract: smd diode marking code a6 DIODE SMD A6 S3 marking DIODE BAS16S3 diode marking code A6 SMD MARKING CODE LP SOT-323 SMD CODE PACKAGE SOT323
    Text: Spec. No. : C303S3 Issued Date : 2004.04.07 Revised Date Page No. : 1/4 CYStech Electronics Corp. High –speed switching diode BAS16S3 Description The BAS16S3 is a high-speed switching diode fabricated in planar technology, and encapsulated in a small SOT-323 plastic SMD package.


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    PDF C303S3 BAS16S3 BAS16S3 OT-323 OT-323 500mA. UL94V-0 diode SMD MARKING CODE A6 smd diode marking code a6 DIODE SMD A6 S3 marking DIODE diode marking code A6 SMD MARKING CODE LP SOT-323 SMD CODE PACKAGE SOT323

    smd transistor 5d sot-23

    Abstract: smd diode marking 5d smd transistor marking 5D diode 5d smd smd diode 5d DAN212N3 5d smd sot-23
    Text: Spec. No. : C303N3R Issued Date : 2003.04.12 Revised Date Page No. : 1/4 CYStech Electronics Corp. High –speed switching diode DAN212N3 Description The DAN212N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package.


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    PDF C303N3R DAN212N3 DAN212N3 OT-23 OT-23 500mA. UL94V-0 smd transistor 5d sot-23 smd diode marking 5d smd transistor marking 5D diode 5d smd smd diode 5d 5d smd sot-23

    PDM5001

    Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
    Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH


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    PDF C3557 PH1503 PH150 PDM5001 PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16

    RB521S-30C2

    Abstract: MARKING C2 SOD523 30C2
    Text: CYStech Electronics Corp. Spec. No. : C302C2 Issued Date : 2003.12.05 Revised Date : Page No. : 1/3 Small Signal Schottky diode RB521S-30C2 Description Planar silicon Schottky barrier diode encapsulated in a SOD-523 plastic SMD package. Features •Extremely small surface mounting type. SC-79/SOD523


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    PDF C302C2 RB521S-30C2 OD-523 SC-79/SOD523) 200mA 200mA) UL94V-0 RB521S-30C2 MARKING C2 SOD523 30C2

    FCH20U10

    Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
    Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode


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    PDF OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 FCH20U10 niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045

    schottky barrier diode b22

    Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
    Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode


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    PDF OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 schottky barrier diode b22 FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08

    thyristor control arc welding rectifier circuit

    Abstract: 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY
    Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing solid state relays, thyristor modules, diode modules, thyristor diode modules, fast recovery diode, single phase & three phase bridge rectifier and press fit diodes etc. along with about 150


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    PDF ISO9001 DXC-614Heatsink thyristor control arc welding rectifier circuit 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY

    NTE617

    Abstract: TCC 025
    Text: NTE617 Varactor Diode Description: The NTE617 is a dual voltage–variable capacitance diode designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning. This device is supplied in the popular TO92 type plastic


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    PDF NTE617 NTE617 100MHz 250MHz, 100MHz, C3/C30, TCC 025

    NTE617

    Abstract: c30 diode
    Text: NTE617 Varactor Diode Description: The NTE617 is a dual voltage-variable capacitance diode designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configurations for minimum signal distortion and detuning. This device is supplied in the popular TO92 type plastic


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    PDF NTE617 NTE617 100MHz 250MHz, 100MHz, C3/C30, c30 diode

    MV104 "direct replacement"

    Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.


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    PDF MV104) MV104 226AA) Curren218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV104 "direct replacement" 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION

    transistor c114

    Abstract: c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR
    Text: Intel740 Graphics Accelerator Reference Card BOM 3/30/98 QTY 5 3 6 48 Component Type Diode Pack Diode Pack Capacitor Capacitor Value N/A N/A 1UF .1UF Manufacturer Motorola Motorola TDK KEMET Part Number BAV99LT1 BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC


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    PDF Intel740TM BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC C0805C103K5RAC 330PF T491D106K016AS C0805C331J5GAC T491D226K016AS transistor c114 c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR

    MV104

    Abstract: MV104 Motorola "back diode" diode characteristics
    Text: MOTOROLA Order this document by MV104/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum


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    PDF MV104/D MV104 MV104) 226AA) MV104 MV104 Motorola "back diode" diode characteristics

    MV104

    Abstract: 150L max3742 semiconductor mv104
    Text: MOTOROLA SEMICONDUCTOR o TECHNICAL Silicon ~ning Order this document bv MV104~ DATA F Diode — This device is designed for FM tuning, general frequency control and tuning, or any top–of–theline application requiring back–to–back diode configurations for minimum


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    PDF MV104~ 140W1 602-2H609 MV1041D MV104 150L max3742 semiconductor mv104

    laser diode 905nm

    Abstract: C30724 EXCELITAS LIDAR pgew1s09 3S09 PGEW 2S09 PGEW 1S09 2S09 PGEW2S09
    Text: PGEW Series 905nm Plastic Pulsed Laser Diode Description Applications The PGEW series employs an advanced multiple quantum well laser diode chip design producing high peak output power at low drive current. Peak wavelength is centered near the maximum responsivity of


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    PDF 905nm C30724 lO-0812/03 laser diode 905nm EXCELITAS LIDAR pgew1s09 3S09 PGEW 2S09 PGEW 1S09 2S09 PGEW2S09

    4n4b

    Abstract: C30122 RCA Solid State power devices
    Text: i C A INC/ ELECTRO OPTICS I D E D 74B4fc75 DOODOQT 5 | T - V I - " C30122 Infrared-Emitting Diode Developmental Type Galiium-Arsenide Type for Pulsed or Continuous DC Operation RCA C30122 is a gallium arsenide solid state diode which emits, when forward


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    PDF 74flMb7S C30122 C30122 4n4b RCA Solid State power devices

    moc3020 triac driver

    Abstract: MOC302I M0c3020-M0c3023 OPTOISOLATOR TRIAC DRIVER
    Text: Optoisolator Specifications M 0c3020-M 0c3023 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e M O C3020-M CC3023 series consists o f a gallium arsenide, in fra re d em itting diode coupled with a light activated silicon bilateral switch,


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    PDF 0c3020-M 0c3023 C3020-M CC3023 MOC3020 MOC302I MOC3022 MOC3023 moc3020 triac driver M0c3020-M0c3023 OPTOISOLATOR TRIAC DRIVER