DIODE CATHODE INDICATED BY YELLOW BAND Search Results

Contextual Info: FDLL4151 FDLL4151 General Description Cathode Band A general purpose diode that couples high forward conductance fast switching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the

Contextual Info: FDLL3595 General Description: A General Purpose diode that couples high forward conductance fast switching speed and high blocking voltages in a glass leadless LL-34 Surface Mount package. Cathode Band ORANGE YELLOW Placement of the Expansion Gap has no relationship to

Contextual Info: BB619 _ / V VHF VARIABLE CAPACITANCE DIODE The B B 61 9 is a V H F variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band B up to 460 M H z in all-band tuners. The diode is encapsulated in a hermetically sealed S O D 1 2 3 plastic envelope suitable for surface mounting.

MAR 747

Abstract: diode Cathode indicated by yellow band BZV87-1V4 smd diode marking 325 glass diode yellow band BZV87 BZV87-2V0 BZV87-2V6 BZV87-3V2
Contextual Info: Product specification Philips Semiconductors Low-voltage stabistors BZV87 series FEATURES DESCRIPTION • Low-voltage stabilization Low-voltage stabilization diode in a small glass SOD 8 O SMD package. • Forward voltage range: 1.4 to 3.2 V The series consists of four types: BZV87-1V4 to BZV87-3V2.

glass diode yellow band

Abstract: bb809 yellow band glass diode DIODE WITH SOD CASE diode Cathode indicated by yellow band
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D m L L S 3^31 D02b 4E 4 42S BB809 SILICON PLANAR VARIABLE CAPACITANCE DIODE The BB809 is a variable capacitance diode in a miniature glass envelope intended for electronic tuning in v.h.f. television tuners with extended band I FCC and OIRT-norm .

stabistor

Abstract: glass diode yellow band BZV87-2V6 BZV87 BZV87-1V4 BZV87-2V0 BZV87-3V2 M3D121 PHILIPS DIODE SOD80
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D121 BZV87 series Low-voltage stabistors Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Mar 21 Philips Semiconductors Product specification Low-voltage stabistors

BZV87

Abstract: BZV87-1V4 BZV87-2V0 BZV87-2V6 BZV87-3V2 M3D121 smd diode marking 325 MAM061 glass diode yellow band
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BZV87 series Low-voltage stabistors Product specification Supersedes data of April 1992 1996 Mar 21 Philips Semiconductors Product specification Low-voltage stabistors BZV87 series FEATURES DESCRIPTION

Contextual Info: 1N4148 1N4446 1N4448 J V HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. These diodes are primarily intended for fast logic applications. QUICK REFERENCE DATA Continuous reverse voltage VR max. Repetitive peak reverse voltage

BB148

Abstract: smd diode p8 BB158 SMD MARKING CODE M 4 Diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB148 VHF variable capacitance diode Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification VHF variable capacitance diode

transistor marking P8

Abstract: smd diode p8 BB148 BB158
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D049 BB148 VHF variable capacitance diode Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification VHF variable capacitance diode

BB133

Abstract: BB150
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB133 VHF variable capacitance diode Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification VHF variable capacitance diode

125OC

Abstract: FDLL3595 FDLL4148 semiconductor band color code
Contextual Info: FDLL3595 General Description: A General Purpose diode that couples high forward conductance fast switching speed and high blocking voltages in a glass leadless LL-34 Surface Mount package. Cathode Band ORANGE YELLOW Placement of the Expansion Gap has no relationship to

BB133

Abstract: BB150
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D049 BB133 VHF variable capacitance diode Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification VHF variable capacitance diode

BB133

Abstract: BB150 marking code P0
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB150 VHF variable capacitance diode Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification VHF variable capacitance diode

diode Cathode indicated by yellow band

Abstract: 1N4148 derating 1N4446 Cathode indicated by blue band DIODE LN4148 J 1N4446 J.1N4446 LN4148 diode 1N4148 1N4448
Contextual Info: 1N4148 1N4446 1N4448 HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. These diodes are primarily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. Repetitive peak reverse voltage

eht of monitor

Abstract: monitor EHT BY620 eht rectifier BY619 diode Cathode indicated by yellow band glass diode yellow band
Contextual Info: ^33^24 b3E D napc/philips DD74323 147 « S I C 3 semicond A BY619 BY620 FOR D E T A ILE D IN FO R M ATIO N SEE THE LATEST ISSUE OF HANDBO OK SC01 OR DATASHEET E.H.T. AVALANCHE VERY FAST SOFT-RECOVERY DIODES * E.H.T. rectifier diodes in hermetically-sealed, axially-leaded glass envelope and designed fo r c.t.v. and

y718

Abstract: Cathode indicated by blue band diode Cathode indicated by blue band BY717 BY718 BY719
Contextual Info: SbE D BY717 BY718 BY719 711002b 0040525 3T7 M P H I N r-os- 7 SILICON VERY FAST EHT SO FT-R ECO VER Y RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended for use in high-voltage applications e.g. the high-voltage supply of television receivers and monitors, at frequencies in excess of 30 kHz. The devices feature

Contextual Info: bTE D • bbSB'lBl OOBbSBB Bib N AMER PHILIPS/DISCRETE APX BY717 BY718 BY719 SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended for use in high-voltage applications e.g. the high-voltage supply o f television receivers and monitors, at frequencies in excess of 30 kHz. The devices feature

Contextual Info: I N AUER PHILIPS/DISCRETE I b b S S ^ l QQEbSQT QT7 b'lE » APX BYOiy B Y 620 E.H.T. AVALANCHE VERY FAST SOFT-RECOVERY DIODES E.H.T. rectifier diodes in hermetically-sealed, axially-leaded glass envelope and designed for c.t.v. and monitor applications with frequencies up to 128 kHz. They are suitable for use in high-voltage

Contextual Info: N AMER PHILIPS/DISCRETE b b S B ^ l DDEbHTfi b^E » A IAPX BY609 BY610 SILICON E.H.T, AVALANCHE RECTIFIER DIODES * E .H .T . rectifier diodes in glass envelopes. For use in high-voltage applications such as multipliers, especially in diode-split transformers. The devices feature non-snap-off characteristics and are capable

Y619

Abstract: monitor EHT picture tube ctv BY619 BY620
Contextual Info: N AUER PH ILIPS /DISC RE TE b'ìE » • bbSB^l OQSbStn QT7 B A P X JL B Y O iy BY620 E.H.T. AVALANCHE VERY FAST SOFT-RECOVERY DIODES* E .H .T . rectifier diodes in hermetically-sealed, axially-leaded glass envelope and designed for c.t.v. and monitor applications w ith frequencies up to 128 kHz. They are suitable for use in high-voltage

BY610

Abstract: PICTURE TUBE BY609 avalanche rectifier sod61 orange
Contextual Info: N AMER PHILIPS/DISCRETE b'ìE D • ^53^31 □□Eb4‘ìfi 4T1 H A P X Jl BY609 BY610 SILICON E.H.T, AVALANCHE RECTIFIER DIODES * E .H .T . rectifier diodes in glass envelopes. For use in high-voltage applications such as multipliers, especially in diode-split transformers. The devices feature non-snap-off characteristics and are capable

PICTURE TUBE

Abstract: BY609 BY610 diode Cathode indicated by yellow band
Contextual Info: N AUER PHIL IPS/DISCR ETE b^E » • bbS3T31 DGEbHTfi 4T1 H A P X BY609 BY610 X SILICON E.H.T, AVALANCHE RECTIFIER DIODES * E.H.T. rectifier diodes in glass envelopes. For use in high-voltage applications such as m ultipliers, especially in diode-split transformers. The devices feature non-snap-off characteristics and are capable

BY619

Abstract: BY620
Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bb53T31 OGSbStn QT7 H A P X Jl DYDiy BY620 E.H.T. AVALANCHE VERY FAST SOFT-RECOVERY DIODES * E .H .T . rectifier diodes in hermetically-sealed, axially-leaded glass envelope and designed for c.t.v. and m onitor applications w ith frequencies up to 128 kHz. They are suitable for use in high-voltage