DIODE CMC F 4 Search Results

Contextual Info: CMT55N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION FEATURES ‹ Vds=25V ‹ Advanced trench process technology ‹ RDS ON =6 mΩ (Max.) , VGS @10V, Ids@30A ‹ High Density Cell Design For Ultra Low On-Resistance ‹ RDS(ON)=9 mΩ (Max.), VGS @4.5V, Ids@30A

CMT35N03G

Abstract: TO-252 N-channel MOSFET Ultra Low voltage rds mosfet
Contextual Info: CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION FEATURES ‹ Vds=25V ‹ Advanced trench process technology ‹ RDS ON =8.5 mΩ (Max.) , VGS @10V, Ids@30A ‹ High Density Cell Design For Ultra Low On-Resistance ‹ RDS(ON)=13 mΩ (Max.), VGS @4.5V, Ids@30A

CMC lcd

Abstract: CMT9435G
Contextual Info: CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES ‹ VDS=-30V , ID=-5.3A ‹ Advanced trench process technology ‹ RDS ON , VGS@-10V , IDS@ -5.3A = 60mΩ ‹ High Density Cell Design For Ultra Low On-Resistance ‹ RDS(ON) , VGS@-4.5V , IDS@ -4.2A = 90mΩ

CMD1210

Contextual Info: ALPHA IND/ CTL MICROüJAVE □565303 OQQQGMO □ r OSE D T-Ô7 - / CMD SERIES GUNN DIODES Features • Available from 4 GHz through 110 GHz • High Efficiency • Low Noise • Maximum Output Power/Frequency Levels • Pulsed Devices with Several Watts

Contextual Info: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V

CMC lcd

Abstract: p-channel mosfet sot-23 P-Channel MOSFET 20V P-Channel Power MOSFET CMT2301 CMT2301GM233 CMT2301M233
Contextual Info: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V

CMC lcd

Abstract: sot-23 P-Channel MOSFET CMT2301 CMT2301GM233 CMT2301M233
Contextual Info: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode ‹ -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell ‹ -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V

CM494CP

Abstract: UC494 CM494 CM494CS UC494A UC494AC UC495A UC495AC UC495
Contextual Info: CM494 ADVANCED REGULATING PULSE WIDTH MODULATOR GENERAL DESCRIPTION FEATURES This of PWM modulator provides a complete pulse width ! Dual uncommitted 40V, 200mA output transistors. modulation system in a single monolithic integrated circuit. ! 1% accurate 5V reference.

tr/2088 RGB-5

Abstract: 2088 RGB-5
Contextual Info: REV ISIO NS . RIGHTS RESERVED LTR DESCRIPTION DATE LOGO CHANGE DWN 08MAÏ20I3 TY APVD KZ ~ ïï= 5: Q O', MAT E R I A L S : -HOUSING: HI GH T E MP E R A T U R E NYLON, BLACK, UL 9 4 V - 0 -SHIELD: 0.20mm T H I C K , BRASS P R E P L A T E D WI T H 1 . 2 7 / j m MI N S E M I - B R I G H T

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/9S/EÇ, BI-PDLAR LED PDLARITY PIN 11 PIN 12 CQLDR + □RANGE + GREEN —

diode 8a 600v

Abstract: CMPFCD86 3 phase pfc diode cmc F 4
Contextual Info: CMPFCD86 PFC Diode 8A/600V FEATURES ‹ Fast switching for high efficiency ‹ Low noise ‹ Trr = 20ns ‹ Low reverse leakage current ‹ High voltage super FRD ‹ PFC application MECHANICAL DATA ‹ Case : Molded plastic TO-220AC / TO-220FP / SMC ‹ Epoxy : UL94V-0 rate flame retardant

diode 8a 600v

Abstract: CMPFCD86 CMPFCD86XN220
Contextual Info: CMPFCD86 PFC Diode 8A/600V FEATURES ‹ Fast switching for high efficiency ‹ Low noise ‹ Trr = 20ns ‹ Low reverse leakage current ‹ High voltage super FRD ‹ PFC application MECHANICAL DATA ‹ Case : Molded plastic TO-220AC / TO-220FP / SMC ‹ Epoxy : UL94V-0 rate flame retardant

diode 8a 600v

Abstract: CMPFCD86XN220
Contextual Info: CMPFCD86 PFC Diode 8A/600V FEATURES ‹ Fast switching for high efficiency ‹ Low noise ‹ Trr = 20ns ‹ Low reverse leakage current ‹ High voltage super FRD ‹ PFC application MECHANICAL DATA ‹ Case : Molded plastic TO-220AC / TO-220FP / SMC ‹ Epoxy : UL94V-0 rate flame retardant

CMPFCD86GN220

Contextual Info: CMPFCD86 PFC Diode 8A/600V FEATURES ‹ Fast switching for high efficiency ‹ Low noise ‹ Trr = 20ns ‹ Low reverse leakage current ‹ High voltage super FRD ‹ PFC application MECHANICAL DATA ‹ Case : Molded plastic TO-220AC / TO-220FP / SMC ‹ Epoxy : UL94V-0 rate flame retardant

CMT10N40

Abstract: CMT10N40N220
Contextual Info: CMT10N40 POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this

CMT04N20N220

Contextual Info: CMT04N20 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced MOSFET is designed to withstand high ! Robust High Voltage Termination energy in avalanche and commutation modes. The new ! Avalanche Energy Specified energy efficient design also offers a drain-to-source diode

CMT07N20N220

Contextual Info: CMT07N20 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced MOSFET is designed to withstand high ! Avalanche Energy Specified energy in avalanche and commutation modes. The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode

CMT20N15

Abstract: CMT20N15N220
Contextual Info: CMT20N15 POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed to withstand high energy ! Robust High Voltage Termination in avalanche and commutation modes. The new energy ! Avalanche Energy Specified efficient design also offers a drain-to-source diode with a

CMT16N25N220

Contextual Info: CMT16N25 POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed to withstand high energy ! Avalanche Energy Specified in avalanche and commutation modes. The new energy ! Source-to-Drain Diode Recovery Time Comparable to a efficient design also offers a drain-to-source diode with a

CMT10N10

Abstract: CMT10N10N220
Contextual Info: CMT10N10 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced MOSFET is designed to withstand high ! Avalanche Energy Specified energy in avalanche and commutation modes. The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode

Contextual Info: CMT20N15 POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed to withstand high energy ! Robust High Voltage Termination in avalanche and commutation modes. The new energy ! Avalanche Energy Specified efficient design also offers a drain-to-source diode with a

CMT20N20N220

Contextual Info: CMT20N20 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced MOSFET is designed to withstand high ! Avalanche Energy Specified energy in avalanche and commutation modes. The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode

CMT10N10

Abstract: CMT10N10N220
Contextual Info: CMT10N10 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced MOSFET is designed to withstand high ! Avalanche Energy Specified energy in avalanche and commutation modes. The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode

CMT4410

Abstract: 2 CHANNEL N-CHANNEL MOSFET static characteristics of mosfet
Contextual Info: CMT4410 N-CHANNEL 30V MOSFET STRUCTURE ! FEATURES Silicon N-channel MOSFET ! ! ! PIN CONFIGURATION Low Qg Low on-resistance Excellent resistance to damage from static electricity SYMBOL 8-PIN SOP S08 D R AIN Top View 1 SOURCE DRAIN 8 2 SOURCE DRAIN 7 3 SOURCE