DIODE D B 3 Search Results

Contextual Info: DIODE MODULE DD30HB/KD30HB UL!E76102 M Power Diode Module D D 30 H B series are designed for various rectifier circuits. D D 30 H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V is

Contextual Info: DIODE MODULE DD60HB/KD60HB UL;E76102 M Power Diode Module D D 60H B series are designed for various rectifier circuits. D D 60H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V is

Contextual Info: N AUER PHILIPS/DISCRETE b lE b b S B ^ l OOSblSD fl71 BA314 D IAPX A LOW VOLTAGE STABISTOR W Z Silicon planar epitaxial diode in DO-35 envelope. This diode is intended for low voltage stabilizing e.g. bias stabilizer in class-B output stages, clipping, clamping and meter protection.

Contextual Info: D IO D E M O D U L E DD200HB Power Diode Module D D 200H B series are designed for various rectifier circuits. D D 200H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V

Contextual Info: Gleichrichterdioden-Brücken Rectifier diode bridges Ponts redresseurs Typ V rrm V rms I fsm Type V B 40.C, 800 SI, „ Ä ä P D - '' B 80 Ç 800 Si, .D, .SD ^ V B f » C £00 Si, .D, .SD * B 380 C 800 Si, .D. .SD : 40 B 380 C 1000 Si 80 125 R /C

Contextual Info: b2E D • b457S25 0037551 34T H N E C E LASER DIODE N E C ELECTRONICS INC / NDL5600D 1 310 nm O PTICA L FIBER C O M M U N IC A T IO N S InG aAsP P H A SE -SH IF T E D D F B D C P B H LA SER D IO D E D E S C R IP T IO N N D L 5 6 0 0 D is a 1 310 nm D F B Distributed Feed-back laser diode chip on carrier with ribbon lead.

bandfilter

Abstract: diods detector diode bandfilter VP
Contextual Info: KAB 1 EABi T r ip le J io d e T h e trip le diode E A B I max32 consists o f th re e diodes 6V^ a rra n g e d a b o u t a com m on, h o rizo n tally m o u n te d , c a ­ th o d e , h a v in g b e en especi­ a lly develo p ed fo r 3-diode circu its. T he o b je c t o f th is

Contextual Info: bEE D b4E7S2S DÜ37SM7 111 « N E C E N E C ELECTRONICS INC LASER DIODE N D L 5 6 0 0 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB DC PBH LASER DIODE DESCRIPTION N D L 5 6 0 0 is a 1 310 nm D F B D istributed Feed-back laser diode especially designed fo r long distance high capacity transm is­

Contextual Info: j- i j- I- “1 Surface Mounting Device p Rectifier Diode Shingle Diode v f iill O U T LIN E D IM EN SIO N S Unit : mm D 1 F D Weight : 0.06g 600V 1A ffl Ü >K Standard soldering pad 5.0 ±0-3 •S B . •¡as. OA. a s. 1 fa i 1.2*°3 M fc te m b -2^ '3

Contextual Info: 3QE D • b.42?52S 002el22b 4 ■ N E «^ELECTRONICS INC T~m - 0 7 LASER DIODE N D L5 0 0 3 D 1 _J 1 300 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE DESCRIPTIO N NDL5003D 1 is a 1 300 nm laser diode especially designed for long distance high capacity transmission systems. The DC-PBH

aml 10 series

Abstract: Scans-001779
Contextual Info: DAF 40 DAF 4 0 Diode-R.F. pentode battery valve The D A F 40 is a diode-pentode for b a tte ry operation; th e p entode section is designed for R .F . an d I.F . am plification, th e diode section for d etectio n a n d A.G.C. A b a tte ry w ith a nom inal voltage of 1.4 V can be used for th e

Contextual Info: Schottky Barrier Diode Twin Diode mwm DF30JC4 o u t lin e 40V 30A Feature • SM D ' SM D • filR=0.7mA 1 Low lR=0 .7mA • i» # î ê « b c u : < U 1 Resistance for thermal run-away • /J v 3 ü * * 3 i B 1 High lo R ating-Sm all-PK G Main Use • ^ -S P C -L C D ^ -^ ^

Contextual Info: Schottky Barrier Diode Twin Diode mwm DF20JC10 o u t lin e 100V 20A Feature • SM D ' SM D • filR=0.7mA 1 Low lR=0.7mA • i» # î ê « b c u : < U 1 Resistance for thermal run-away • /J v 3 ü * * 3 i B 1 High lo R ating-Sm all-PK G Main Use • ^ -S P C -L C D ^ -^ ^

Contextual Info: N AflER PHILIPS/DISCRETE b^E D m bb53^31 DDSb4b5 53b IAPX BY328 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television

Contextual Info: DIODE MODULE f .r .d . FRN300BA F R N 3 0 0 B A is a high speed isolated diode module designed for high power switching application. F R N 3 0 0 B A is suitable for high frequency application requiring low loss and high speed control. • High Speed trrS 100ns

Contextual Info: niCROPAC I N D U S T R I E S IN C 42 E D b l l 2 b 40 OOOQTQti 1 B B H PI GaAs LIGHT-EMITTING DIODE “ PIGTAIL” 62017 TYPE GS 3040 \ •H IG H INTENSITY GaAIAs VERSION AVAILABLE MINIATURE HIGH EFFICIENCY LED WITH NARROW BEAM ANGLE GLASS/METAL WELDED PACKAGE

Contextual Info: î / a v b * - J a i l s ' m Schottky Barrier Diode Single Diode Surface Mount O U TLIN E D IM E N S IO N S M1FM3 30V 3A > /J\§kS M D > Tjl5 0 °C MS V f = 0.46 V > f f ilR = 0.05 m A > D C /D C ‘ " B IS s JKV3 y RATINGS • lÊ ÎÎIi^ / Ë f ê a Absolute Maxim um Ratings ÎBÊ &^i|rêa

DS16BN

Abstract: DS16B LOW FORWARD VOLTAGE DROP DIODE RECTIFIER 350 v 30 a diode rectifier DS-16B high voltage rectifier diode DIODE y 12 mitsubishi bridge rectifier
Contextual Info: MITSUBISHI RECTIFIER DIODE STACK ASSEMBLY DS16BN MEDIUM POWER RECTIFIER USE D E S C R IP T IO N O U T L IN E D R A W IN G Dim ension : mm Mitsubishi type D S1 6 B N series are Medium power rectifier diode stack assemblies using high reliability rectifier diode. These stack assemblies are

diode 429 IK

Contextual Info: □ - □ 3 . V 'C X - Y Super Fast Recovery Diode Twin Diode mn?â Surface Mount OUTLINE DIMENSIONS DF20LC20U Unit • mm Package I STO-220 10 9 ± -9- 200V 20A >SMD m s 'i'x > trr35n s >SRSÜ > D C /D C ® > 7 5 ^ * -f-J b 2 @ (D >^BsOAw0,^ K H s . FA

BB620

Contextual Info: 7iiQô2b ooböaai 4 ^ IPHIN BB620 VHF VARIABLE CAPACITANCE DIODE The B B 6 2 0 is a V H F .¿ole capacitance d iod e in planar te ch n o lo g y w ith a very high capacitance ratio intended fo r V H F -b a n d A up to 160 M H z in all-band tuners. T he diode is encapsulated in a he rm etically sealed S O D 1 2 3 envelope suitable fo r surface m ounting.

marking A7

Contextual Info: M f| b 3 b 7 5 S 5 0030245 6367255 MOTOROLA J ” SC 34C <DIODES/OPTO> 38245 D T - O U - II SOT23 continued DEVICE NO. BAV99 SMALL-SIGNAL DUAL SER IES SWITCHING DIODE TOP n AK • Dual diode designed for high-speed switching. □ nr K A Device MAXIMUM RATINGS

Contextual Info: RB520CS-30 Schottky Barrier Diode Preliminary Small Signal Diode SOD-923 B Features C A Low power loss, high current capability, low VF Surface device type mounting Moisture sensitivity level 1 D Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: • b b S B ' m 002432b S3T ■ APX P h ilip ^ e m ic o n d u c to re N AMER PHILIPS/DISCRETE b?E T> Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching

Contextual Info: N AMER PHILIPS/DISCRETE bTE b b S a ^ l 00Eb433 435 BB909A BB909B D APX l SILICON PLANAR VARIABLE CAPACITANCE DIODE The BB909 is a variable capacitance diode in a glass envelope intended for electronic tuning in v.h.f. television tuners for C.A.T.V. applications.