DIODE D08 Search Results

d08s60

Abstract: diode 8a 600v
Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery

Schottky diode TO220

Abstract: Q67040S4647 SDT08S60 D08S60
Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery

Schottky diode TO220

Abstract: SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647
Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery

Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery

D0865C5

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the

D0865C5

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK08G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SiC Silicon Carbide Diode 5 t h Ge ner ation thin Q! T M 650V SiC Schottky Diode IDL08G65C5 Final Da ta Sh eet Rev. 2.0, 2013-12-05 Po wer Ma nage m ent & M ulti m ark et 5th Generation thinQ! SiC Schottky Diode 1 IDL08G65C5 ThinPAK 8x8 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SCHOTTKY DIODE ARRAY ISSU E 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise The device helps suppress transients caused

Contextual Info: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parailei data lines. • Reduced reflection noise • Repetitive peak forw ard current • 200mA

Contextual Info: SV10 M ITEL Rectifier Diode SEMICONDUCTOR DS4084 - 2.3 Supersedes Septem ber 1995 version, DS4064 - 2.2 KEY PARAMETERS V RRM 2500V 180A Jf AV 2200A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998

LIC AGENTS DATA

Contextual Info: SV20 M ITEL Rectifier Diode SEMICONDUCTOR DS4085 - 2.3 Supersedes Septem ber 1995 version, DS4085 - 2.2 KEY PARAMETERS V RRM 2000V 220A Jf AV 4000A FSM APPLICATIONS • R ectification. ■ Freewheel Diode. ■ DC M otor C ontrol. ■ Pow er Supplies.

Contextual Info: SV20 M ITEL Rectifier Diode SEMICONDUCTOR DS4085 - 2.3 Supersedes Septem ber 1995 version, DS4085 - 2.2 KEY PARAMETERS VR R M 2000V 220A J A V 4000A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998

25FMR

Contextual Info: MITEL SV05.F Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4144 - 3.3 DS4144 - 3.4 March 1998 KEY PARAMETERS V RRM 2500V 145A Jf AV 2500A FSM 150(lC Q, APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ S nubber Diode.

Contextual Info: MITEL SV15.F Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4209 - 2.1 DS4209 - 2.2 APPLICATIONS March 1998 KEY PARAMETERS v RRM 1600V 205A Jf AV 3000A FSM 35|lC Q r • Induction Heating. ■ A.C. M otor Drives. ■ S nubber Diode.

dil16

Abstract: DIL16-package diode d07 49 schematic with a schottky diode SDA24 SDA24D16 SDA24N16 DSA003653
Contextual Info: SCHOTTKY DIODE ARRAY SDA24 ISSUE 3 – JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA24 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • • The device helps suppress transients caused by transmission line reflections, cross talk and

SDA32N20

Abstract: DIL-20 DIL20 SDA32 SDA32D20 SO20 DSA003654
Contextual Info: SCHOTTKY DIODE ARRAY SDA32 ISSUE 2 – JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • • The device helps suppress transients caused by transmission line reflections, cross talk and

Contextual Info: SV15.F MITEL Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4209 - 2.1 DS4209 - 2.2 APPLICATIONS • KEY PARAMETERS V RRM 1600V 205A Jf AV 3000A FSM 35|iC Q r 3.2|is t rr Induction Heating. ■ A.C. Motor Drives. ■ Snubber Diode.

Contextual Info: SV05.F M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4144 - 3.3 DS4144 - 3.4 KEY PARAMETERS V RRM 2500V 145A Jf AV 2500A FSM 150(lC Q, 2.2|is APPLICATIONS • March 1998 Induction Heating. ■ A.C. Motor Drives. ■ Snubber Diode.

DIODE N20

Abstract: SD Series
Contextual Info: Section 9: Integrated Circuits S ch o ttky Diode A rra y Series SD A S e rie s The SDA Schottky Barrier Diode Array series is designed to reduce reflection noise on high speed parallel data lines. This helps suppress transients caused by transm ission line

TSC5304D

Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

Contextual Info: GEC P L E S S E Y 'SÊt JANUARY1996 SEMI CO NDUC TOR S DS4209-2.1 SV15.F FAST RECOVERY DIODE KEY PARAMETERS v RRM 1600V 205A | f AV 3000A FSM 35|iC Q r 3.2|is *n APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Snubber Diode. ■ Welding.

kp50a

Abstract: kp20a ZP200A KP300A KP200A ZP300A kp5a ZP20A zp5a KP100a
Contextual Info: Ü t t S M M W M I# Stud Version Semiconductor STANDARD RECOVERY DIODE Stud Version FAST RECOVERY DIODE (Stud Version) M ' °r & É (« IÊ 3 £ ) PHASE CONTROL THYRISTOR (Stud Version) TRIAC THYRISTOR (Stud Version) t i& R T & ä H K K A ) FAST THYRISTOR (Stud Version)