DIODE D188 Search Results

NNCD18ST

Abstract: NNCD18ST-T1-AT
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8ST to NNCD36ST ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR CAN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION These products are the ESD (Electrostatic Discharge) Noise 0.3 +0.1 −0 Clipping Diode that is designed to protect from both positive and

d1887

Abstract: nec 2114 NNCD27DA-T1-AT NNCD5.1DA NNCD2 SC-76 NNCD6.8D-A
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD4.7DA to NNCD39DA ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD DESCRIPTION PACKAGE DRAWING Unit: mm Discharge) noise protection. Based on the IEC61000-4-2 test on 2.5±0.15 electromagnetic interference (EMI), the diode assures an endurance,

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD2.0DA to NNCD39DA ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD DESCRIPTION PACKAGE DRAWING Unit: mm Discharge) noise protection. Based on the IEC61000-4-2 test on 2.5±0.15 electromagnetic interference (EMI), the diode assures an endurance,

d1887

Abstract: NNCD3.9DA diode 6da ac 4DA NNCD36DA NNCD5.1DA
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD2.0DA to NNCD39DA ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD DESCRIPTION PACKAGE DRAWING Unit: mm Discharge) noise protection. Based on the IEC61000-4-2 test on 2.5±0.15 electromagnetic interference (EMI), the diode assures an endurance,

NNCD18ST

Abstract: NNCD18ST-T1-AT NNCD27ST-T1-AT NNCD36ST
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8ST to NNCD36ST ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR CAN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION These products are the ESD (Electrostatic Discharge) Noise 0.3 +0.1 −0 Clipping Diode that is designed to protect from both positive and

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8ST to NNCD36ST ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR CAN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION These products are the ESD (Electrostatic Discharge) Noise 0.3 +0.1 −0 Clipping Diode that is designed to protect from both positive and

D1887

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD2.0DA to NNCD39DA ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD DESCRIPTION PACKAGE DRAWING Unit: mm Discharge) noise protection. Based on the IEC61000-4-2 test on 2.5±0.15 electromagnetic interference (EMI), the diode assures an endurance,

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD7.5MDT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION This product is the ESD (Electrostatic Discharge) Noise Clipping 0.3±0.05 1.25±0.1 2.5±0.15 Diode that is designed to protect from both positive and negative noise.

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD7.5MDT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION This product is the ESD (Electrostatic Discharge) Noise Clipping 0.3±0.05 1.25±0.1 2.5±0.15 Diode that is designed to protect from both positive and negative noise.

nec 1251

Abstract: SC-76 D1888 nec p 65 PF30r
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD7.5MDT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION This product is the ESD (Electrostatic Discharge) Noise Clipping 0.3±0.05 1.25±0.1 2.5±0.15 Diode that is designed to protect from both positive and negative noise.

NNCD20DT-T1-AT

Abstract: NNCD36DT NNCD18DT nec 1251 NNCD27DT NNCD36DT-T1-AT lin bus application NNCD20DT d18880 SC-76
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD18DT to NNCD36DT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION 2.5±0.15 NNCD18DT and NNCD36DT are suitable for ESD protection of LIN 1.7±0.1 0.3±0.05 1.25±0.1

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD18DT to NNCD36DT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION 2.5±0.15 NNCD18DT and NNCD36DT are suitable for ESD protection of LIN 1.7±0.1 0.3±0.05 1.25±0.1

NNCD18DT-T1-AT

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD18DT to NNCD36DT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION 2.5±0.15 NNCD18DT and NNCD36DT are suitable for ESD protection of LIN 1.7±0.1 0.3±0.05 1.25±0.1

d1889

Abstract: 2SK3653C marking EE
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3653C contains a diode and high resistivity 0.2 time during power-on. In addition, because of its compact

d1889

Abstract: 2SK3230C SC-89 marking EE
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230C contains a diode and high resistivity 3 0.8 ±0.1 phones. 1.6 ±0.1 for compact ECMs for audio or mobile devices such as cell-

CHSD6-60C

Abstract: CHSD6 a26544 C0805C473K5RAC CMPZ524B 1808JA250102MCTPY2 LM5072 PJ-102A LM5073 LM5576
Contextual Info: National Semiconductor Application Note 1574 Youhao Xi March 2007 Introduction Precautions The LM5073 evaluation board is designed as a low cost solution for both IEEE802.3af fully compliant and non-compliant Power over Ethernet PoE PD applications. The board also

180N04

Abstract: d1889 NP180N04TUG TO-263-7pin NP180 NP180N04TUG-E2-AY MP-25ZT NP180N04TUG-E1-AY NP180N04TUG-E1-AY in date code marking NEC
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP180N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP180N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP180N04TUG-E1-AY

K4078

Abstract: C277C nec 277c nec marking code 277 C 277 C 2SK4078-ZK-E1-AY 2SK4078-ZK-E2-AY 2SK4078 D18885EJ1V0DS
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4078 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4078-ZK-E1-AY Note 2SK4078-ZK-E2-AY

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

CRCW12068R20J

Abstract: cc7343 Resistor 820 Ohm SI2301 equivalent resistor 0.47 ohm rj45 connector with built in transformer schematic LTM673-R1S2-35 resistor 220 ohm si2301 SOT23-3 10 pin monitor flyback transformer schematics
Contextual Info: National Semiconductor Application Note 1521 Youhao Xi Bradley Kennedy April 4, 2008 Introduction 3.3V. Contact National on support to modify the latter version to other output voltage. In the following, descriptions apply to both versions of the circuit boards unless specifically indicated.

100N055

Abstract: NP100N055MDH NP100N055PDH 100n05 NP100N055NDH NP100N055PDH-E1-AY MP-25ZP NP100N055PDH-E1 NP100N055NDH-S18-AY D1880
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N055MDH, NP100N055NDH, NP100N055PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N055MDH, NP100N055NDH, NP100N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.

D1881

Abstract: NP90N055PUH NP90N055MUH MP-25ZP NP90N055NUH TRANSISTOR MARKING YB NP90N055NUH-S18
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N055MUH, NP90N055NUH, NP90N055PUH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N055MUH, NP90N055NUH, NP90N055PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.

nec 7800

Abstract: D1880 NP90N055PDH NP90N055NDH NP90N055MDH 90N055 MP-25ZP
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N055MDH, NP90N055NDH, NP90N055PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N055MDH, NP90N055NDH, NP90N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.

13000 transistor TO-220

Abstract: 100N04 np100n04mdh NP100N04PDH MP-25ZP NP100N04NDH S100BR
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N04MDH, NP100N04NDH, NP100N04PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N04MDH, NP100N04NDH, NP100N04PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.