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    DIODE D3 Search Results

    DIODE D3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE D3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d4515

    Abstract: d209l transistor D208L
    Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


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    PDF O-126 D1148D D1151 D1160 D1173A BUT11A D4515 2SC3320 BUS13 d4515 d209l transistor D208L

    D1151

    Abstract: D207L
    Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


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    PDF O-126 2SC3679 2SC3680 BU508AS BU508A 2SC4747 2SC4430 2SC3996 2SC3997 2SC3998 D1151 D207L

    R22A

    Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
    Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener


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    PDF 110VAC ZPS60-3 R22A transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E

    transistor R1d

    Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
    Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener


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    PDF 110VAC ZPS40-3 transistor R1d transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F

    Untitled

    Abstract: No abstract text available
    Text: ID101 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil ID101 The ID101 is a low leakage Monolithic Dual Pico-Amp Diode The ID101 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology


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    PDF ID101 ID101

    ID101 diode

    Abstract: No abstract text available
    Text: ID101 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil ID101 The ID101 is a low leakage Monolithic Dual Pico-Amp Diode The ID101 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology


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    PDF ID101 ID101 ID101 diode

    diode reverse voltage protection

    Abstract: ID100 ID-100
    Text: ID100 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil ID100 The ID100 is a low leakage Monolithic Dual Pico-Amp Diode The ID100 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology


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    PDF ID100 ID100 diode reverse voltage protection ID-100

    Diode Motorola 711 2N2905A

    Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


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    PDF MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MV2103 Diode Motorola 711 2N2905A pin configuration transistor BC547 2N2222 BC237 2N555

    1N4448

    Abstract: 1N4448W IMBD4448 LL4448
    Text: 1N4448W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type


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    PDF 1N4448W DO-35 1N4448, LL4448, OT-23 IMBD4448. OD-123 D3/10 D-74025 10-Sep-03 1N4448 1N4448W IMBD4448 LL4448

    Untitled

    Abstract: No abstract text available
    Text: 1N4448W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type


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    PDF 1N4448W DO-35 1N4448, LL4448, OT-23 IMBD4448. OD-123 D3/10 D-74025 12-May-03

    Untitled

    Abstract: No abstract text available
    Text: LSID100 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil LSID100 The LSID100 is a low leakage Monolithic Dual Pico-Amp Diode The LSID100 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current leakage must be


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    PDF LSID100 LSID100

    BAS70-07S

    Abstract: BAS70-08S
    Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF


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    PDF BAS70-07S BAS70-08S OT323-6L BAS70-08S

    marking D33

    Abstract: BAS70-07S BAS70-08S
    Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF


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    PDF BAS70-07S BAS70-08S OT323-6L BAS70-08S marking D33

    Untitled

    Abstract: No abstract text available
    Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF


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    PDF BAS70-07S BAS70-08S OT323-6L BAS70-08S

    D3012B5

    Abstract: No abstract text available
    Text: Silicon Carbide Schottky Diode IDW30G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW30G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1


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    PDF IDW30G120C5B D3012B5

    scr 300 amps

    Abstract: T30P600S scr 250 amps 2000 Volt D77P4400 D52P1800S T52P800S 5000 volt scr D30P400S T30P700S D38P1000S
    Text: DIODE CAPSULES & SCR CAPSULES Diode Capsules CKE Number D30P400S D30P1200S D38P750S D38P1000S D38P1000S1 D38P1000S3 D38P1200S D38P1500S D52P1800S D52P2400S D77P2900S D77P3900S D77P4400S Vrrm volts 500-1500 500-1500 1500-3000 1000-2000 1500-2600 3500-4500


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    PDF D30P400S D30P1200S D38P750S D38P1000S D38P1000S1 D38P1000S3 D38P1200S D38P1500S D52P1800S D52P2400S scr 300 amps T30P600S scr 250 amps 2000 Volt D77P4400 D52P1800S T52P800S 5000 volt scr D30P400S T30P700S D38P1000S

    Untitled

    Abstract: No abstract text available
    Text: 1000V 75A APT75DQ100B APT75DQ100S APT75DQ100BG* APT75DQ100SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE B PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode


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    PDF APT75DQ100B APT75DQ100S APT75DQ100BG* APT75DQ100SG* O-247

    217F

    Abstract: resistor film transistor MTBF L2 diode 725
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    PDF ZPSA40-5 217F resistor film transistor MTBF L2 diode 725

    ZPSA60-15

    Abstract: FR 306 Diode 217F
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-15 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    PDF ZPSA60-15 ZPSA60-15 FR 306 Diode 217F

    DIODE 4008

    Abstract: "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-12 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    PDF ZPSA40-12 DIODE 4008 "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor

    217F

    Abstract: ZPSA60-12 capacitor variable ceramic zd1 1014 105 capacitor
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-12 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    PDF ZPSA60-12 217F ZPSA60-12 capacitor variable ceramic zd1 1014 105 capacitor

    DIODE D2

    Abstract: diode bandfilter Diode d3 schema foto diode DE diode
    Text: I * DRIEVOU DIGE DIODE De EÀB 1 is een drievoudige diode, voor gebruik in de bekende drie-dioden schakeling, die een ideale weergaye bevordert. Zij bestaat uit een gem eenschappelijke kathode, w aarom heen drie diodeplaatjes zijn aangebracht. Diode d3 w ordt gebruikt voor de detectie, diode d1 zorgt voor de regelspanning


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    diode G21

    Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
    Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith


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    PDF FMMD914 BAV70 BAV74 BAV99 BAW56 100mA diode G21 marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84

    diode Lz 66

    Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
    Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith


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    PDF FMMD914 BAV70 BAV74 BAV99 BAW56 100mA BZX84 FMMD3102 BZX84-C3V0 BZX84-C3V3 diode Lz 66 diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 diode marking x6 BZX84-C15