DIODE D9 Search Results

diode G21

Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

diode Lz 66

Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3/3A/3C/3S SOT—23 SCHOTTKY DIODE FEATURES CMPSH-3 Marking: D95 CMPSH-3A Marking: DB1 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage

Contextual Info: BYT 30P-1000 FAST RECOVERY RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPABILITY ■ VERY LOW REVERSE RECOVERY TIME Cathode connected to case ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING SO D93 Plastic SUITABLE APPLICATIONS ■ FREE WHEELING DIODE IN CONVERTERS

SMD diode D95

Abstract: transistor smd marking BA sot-23 BAT64
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SMALL SIGNAL SCHOTTKY DIODE BAT64 SOT-23 3 Pin Configuration MARKING:- D95 1 = ANODE 2 = NC 3 = CATHODE 1 2 DESCRIPTION General Purpose Schottky Diode Featuring Very Low Turn-on Voltage And Fast Switching.

Contextual Info: Technische Information / technical information Schnelle beschaltungslose Diode D931SH Fast Hard Drive Diode Key Parameters enndaten VRRM 6500 V IFAVM 940 A TC=85 °C IFSM VT0 16000 A 3570A (TC=55°C) 1,99 V rT 1,44 mΩ RthJC 10 K/kW Clamping Force 27 … 47 kN

Contextual Info: Technische Information / technical information Schnelle beschaltungslose Diode D911SH Fast Hard Drive Diode Key Parameters enndaten VRRM 4500 V IFAVM 890 A TC=85 °C IFSM VT0 17000 A 3570A (TC=55°C) 2,02 V rT 1,592 mΩ RthJC 10 K/kW Clamping Force 27 … 45 kN

14GT8

Abstract: I-TD92-3 ET-T1554 Scans-0017297 general electric 14gt8 tube
Contextual Info: 14GT8 14GT8 ET-T1554 Page 1 DUPLEX-DiODE TRIODE TUBES 10-59 FOR DETECTOR AND AF VOLTAGE-AMPLIFIER APPLICATIONS DESCRIPTION AND RATING =— The 14GT8 is a duplex-diode, high-mu triode with separate cathodes for each of the diode sections and the triode section. The tube is primarily

ultrafast igbt

Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching

diode 1334

Abstract: 1334 diode power diode with piv of 30v CA3141E CA3141 high voltage diodes MS-001-BB VF10 e16 diode 533 1334 diode
Contextual Info: CA3141 S E M I C O N D U C T O R High-Voltage Diode Array For Commercial, Industrial and Military Applications July 1996 Features Description • Matched Monolithic Construction - VF Match Each Diode Pair . . . . 0.55mV At IF = 1mA The CA3141E High Voltage Diode Array Consists of ten general purpose high reverse breakdown diodes. Six diodes are

CA3141E

Abstract: ca3141 VF10
Contextual Info: CA3141 S E M I C O N D U C T O R High-Voltage Diode Array For Commercial, Industrial & Military Applications March 1993 Features Description • Matched Monolithic Construction - VF for Each Diode Pair Matched to Within 0.55mV Typ at lF = 1mA The CA3141E High Voltage Diode Array Consists of ten general purpose high reverse breakdown diodes. Six diodes are

sin 4145

Abstract: DD90F 120J125
Contextual Info: SANSHA ELECTRIC MFG CO 37E D DOGüO'ia T Ö S E M J f - 2,3-0? / DIODE MODULE SanRex Power Diode Module DD 90F series are designed for various rectifier circuits. DD90F has two diode chips connected in series in 25 mm 1 inch width package and the .mounting base is electrically isolated from elements for simple heatsink construction.

BA159

Abstract: ba159 diode diode BA159 10A DIODE 1000C 500C
Contextual Info: BA159 Naina Semiconductor emiconductor Ltd. Fast Recovery Diode Diode, 1.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic

fdfs6n303

Abstract: F011 F63TNR F852 L86Z SOIC-16
Contextual Info: January 2000 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.

Contextual Info: SKN 3F20 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 3F20 SKR 3F20 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5677 8 (),)(9) ,+'1&/) # :)(%)1;* %)1&' *&9) <;1. /'&99 # # ;=9>'&1+( ?.()&-)- 91>- @$A BC +( 57DE6 3FG

BY397

Abstract: ba159 diode 500C 550C BA159 diode BA159
Contextual Info: BY397 Naina Semiconductor emiconductor Ltd. Fast Recovery Diode Diode, 3.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic

a7840

Abstract: fdfs6n303
Contextual Info: FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor’s FETKEY technology combines high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and

BT 69D

Abstract: FBC 320
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data

SO8 package fairchild

Abstract: fd303 f852
Contextual Info: August 1999 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology combines a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The

2P102

Abstract: F011 F63TNR F852 FDFS2P102 L86Z
Contextual Info: August 1999 FDFS2P102 FETKEY P-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology combines a high cell density MOSFET and low forward drop 0.47V Schottky diode into a single surface mount power package. The

Q65110A8642

Abstract: Wavelength 450nm TO38 Laser
Contextual Info: Blaue Laser Diode in TO38 ICut Bauform Blue Laser Diode in TO38 ICut Package PL T4 NSB Besondere Merkmale Features • Typ. Emissionswellenlänge 450nm • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Transversal Monomode Halbleiterlaser

TO38 Laser

Abstract: PL 450B blue Laser-Diode 450B
Contextual Info: Blaue Laser Diode in TO38 ICut Bauform Blue Laser Diode in TO38 ICut Package PL 450B PRELIMINARY Besondere Merkmale Features • Typ. Emissionswellenlänge 450nm • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • Transversal Monomode Halbleiterlaser

DIODE T4 symbol

Abstract: NS-B
Contextual Info: Blaue Laser Diode in TO38 ICut Bauform Blue Laser Diode in TO38 ICut Package PL T4 NSB VORLÄUFIGES Datenblatt PRELIMINARY Datasheet Besondere Merkmale Features • Typ. Emissionswellenlänge 450nm • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus

Contextual Info: BZT52C2V0K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A ­Wide zener voltage range selection : 2.0V to 75V ­Surface device type mounting ­Moisture sensitivity level 1 ­Matte Tin Sn lead finish with Nickel(Ni) underplate