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    DIODE DATASHEET Search Results

    DIODE DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ8V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE DATASHEET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 30-F2166BA150RW-L267G09 target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Brake Switch Copyright Vincotech 1 12 Mar. 2015 / Revision 1 30-F2166BA150RW-L267G09 target datasheet Brake Diode Brake Protection Diode Rectifier Diode Rectifier Diode


    Original     		30-F2166BA150RW-L267G09 PDF

    Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604 PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC6H065 O-220AC STPSC6H065D STPSC6H065G-TR DocID023247 PDF

    Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC10H065 O-220AC STPSC10H065D STPSC10H065G-TR DocID023604 PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247 PDF

    Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598 PDF

    Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603 PDF

    Contextual Info: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC10H065-Y DocID026618 PDF

    Contextual Info: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		RJS6005TDPN-EJ R07DS0899EJ0101 PRSS0003AN-A O-220AB-2L) PDF

    Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		RJS6004WDPK R07DS0897EJ0200 PRSS0004ZE-A PDF

    Contextual Info: 30-F2166BA150RW01-L267G19 target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Brake Switch Copyright Vincotech 1 12 Mar. 2015 / Revision 1 30-F2166BA150RW01-L267G19 target datasheet Brake Diode Brake Protection Diode Rectifier Diode Copyright Vincotech


    Original     		30-F2166BA150RW01-L267G19 PDF

    Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		RJS6004WDPK R07DS0897EJ0100 PRSS0004ZE-A PDF

    Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		RJS6005WDPK R07DS0901EJ0200 PRSS0004ZE-A PDF

    Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		RJS6005WDPK R07DS0901EJ0201 PRSS0004ZE-A PDF

    Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		RJS6005WDPK R07DS0901EJ0100 PRSS0004ZE-A PDF

    Contextual Info: 10-0B166BA028SC-M989G09 target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Rectifier Diode Copyright Vincotech 1 23 Mar. 2015 / Revision 1 10-0B166BA028SC-M989G09 target datasheet Brake Switch Brake Diode Brake Protection Diode Copyright Vincotech


    Original     		10-0B166BA028SC-M989G09 PDF

    Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		RJS6004WDPK R07DS0897EJ0300 PRSS0004ZE-A PDF

    Vincotech

    Contextual Info: 10-0B06PPA006RC-L023A09 datasheet Maximum Ratings Inverter Switch Copyright Vincotech 1 16 October 2014 / Revision 1 10-0B06PPA006RC-L023A09 datasheet PFC Switch PFC Diode PFC Switch Protection Diode Rectifier Diode Copyright Vincotech 2 16 October 2014 / Revision 1


    Original     		10-0B06PPA006RC-L023A09 Vincotech PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		RJS6004TDPP-EJ R07DS0896EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		RJS6004TDPP-EJ R07DS0896EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ PDF

    Contextual Info: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		RJS6004TDPN-EJ R07DS0895EJ0100 PRSS0003AN-A O-220AB-2L) PDF

    Vincotech

    Contextual Info: 10-0B06PPA010RC01-L025A19 datasheet Maximum Ratings Inverter Switch Copyright Vincotech 1 16 October 2014 / Revision 1 10-0B06PPA010RC01-L025A19 datasheet PFC Switch PFC Diode PFC Switch Protection Diode Rectifier Diode Copyright Vincotech 2 16 October 2014 / Revision 1


    Original     		10-0B06PPA010RC01-L025A19 Vincotech PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		RJS6004TDPP-EJ R07DS0896EJ0102 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ PDF

    PRSS0003ZE-A

    Contextual Info: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


    Original     		RJS6004WDPQ-E0 R07DS0898EJ0101 PRSS0003ZE-A O-247) PRSS0003ZE-A PDF