DIODE DETECTOR X BAND Search Results

Contextual Info: P ^pi GEC PLESSEY DC1331 GaAs SCHOTTKY X-BAND WAVEGUIDE INTEGRAL LIMITER MIXER DIODE This diode is used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as a sensitive broadband detector at high microwave

Contextual Info: HSCH6312 SCHOTTKY MIXER/DETECTOR DIODE DESCRIPTION: The HSCH6312 is a Hermatically Sealed , Silicon Medium Barrier Schottky Mixer/Detector Diode Designed for X-Band Operation. PACKAGE STYLE 860 MAXIMUM RATINGS I 20 mA V 4.0 V PDISS 150 mW @ TC = 25 OC TJ -65 OC to +175 OC

s276

Abstract: ODS-276 23/AF30Z-30-00-20
Contextual Info: Preliminary Specification High Reliability Semiconductor Schottky Detector Diodes ML40215-S-120 ML40215-S-276 V1.00 ODS 120 Outline Features x x x Low I/F Noise High Sensitivity Space Qualified Description The ML40215-S is a low barrier N type Silicon detector diode in the ODS

BAV46

Abstract: BAS46 cl8960 X-band doppler radar module Gunn Diode at power supply circuit doppler radar module Gunn Diode x-band BAV46 diode gunn diode radar module DO-23
Contextual Info: 7'¿fl OC X BAS46 X-BAND MIXER/DETECTOR DIODE Silicon S chottky barrier diode in DO-23 outline specially designed fo r use in Doppler radar systems and intruder alarms where low 1 /f noise and high sensitivity are required. May be used fo r both mixer and detector applications. This device is a direct replacement fo r the BAV46 and has an all-bonded

Contextual Info: • 37bô5E2 D016455 TOS « P L S B Si GEC PLE S S EY SEMICONDUCTORS DC1331 GaAs SCHOTTKY X-BAND WAVEGUIDE INTEGRAL LIMITER MIXER DIODE This diode is used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as a sensitive broadband detector at high microwave

Contextual Info: LTC5505-1/LTC5505-2 RF Power Detector with Buffered Output and >40dB Dynamic Range U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ The LTC 5505-X is an RF power detector for RF applications operating in the 300MHz to 3.5GHz range. A temperature compensated Schottky diode peak detector and

6v dc to dc mobile charger circuit

Abstract: ms10 diode wireless mobile charger block diagram 6v dc to dc mobile charger circuit with 500mA metal detector diagram PI LTRW DIODE RF DETECTOR LT 543 IC pin diagram schematic diagram of mobile phone charger audio envelope detector diode
Contextual Info: LTC5505-1/LTC5505-2 RF Power Detector with Buffered Output and >40dB Dynamic Range U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ The LTC 5505-X is an RF power detector for RF applications operating in the 300MHz to 3.5GHz range. A temperature compensated Schottky diode peak detector and

LTRW

Abstract: RF AMPLIFIER marking S5 RF 900MHz TO 1800MHz MARKING bw SOT23 LTC DWG 05-08-1633 dual directional coupler LTC5505-1 LTC5505-1ES5 LTC5505-2 LTC5505-2ES5
Contextual Info: Final Electrical Specifications LTC5505-1/LTC5505-2 RF Power Detector with Buffered Output and >40dB Dynamic Range October 2001 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ The LTC 5505-X is an RF power detector for RF applications operating in the 300MHz to 3GHz range. A temperature compensated Schottky diode peak detector and buffer

tangential

Abstract: AEY17 germanium rectifier diode K1007
Contextual Info: AEYI7 MICROWAVE DETECTOR DIODE Sub-m iniature germ anium bonded backward diode p rim arily intended for broadband low lev el d etecto r applications at X -ban d. QUICK R E FE R E N C E DATA Frequency range 1 to 18 GHz Typ. zero bias tangential sen sitivity at X-band

tba 450

Abstract: dc46a GUNN DIODE plessey
Contextual Info: GEC PLESSEY SENICONDS PACKAGED DETECTOR MODULES 43E D • 3?t.asaa oaisabi m ■ plsb 'X -o'i-o 'j DB3031 Germanium Backward Diode Detector Modules • • • • • • 0-1-18 GHz frequency range High sensitivity at zero bias High dynamic range > 4 5 d B

sbx201c

Contextual Info: SBX201C Ordering number : ENA0628B SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ Less parastic components Small forward voltage

Contextual Info: SBX201C Ordering number : ENA0628 SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ . Less parastic components. Small forward voltage.

Contextual Info: SBX201C Ordering number : ENA0628A SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ . Less parastic components. Small forward voltage.

Contextual Info: P^piG EC PLESSEY DC1501/12/44 SILICON SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES FOR INTRUDER ALARM APPLICATIONS DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance

Contextual Info: SBX201C Ordering number : ENA0628B SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ Less parastic components Small forward voltage

Contextual Info: SBX201C Ordering number : ENA0628A SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ . Less parastic components. Small forward voltage.

LG diode 831

Abstract: MA4E2054-287T
Contextual Info: Surface Mount Low Barrier X-Band Schottky Diode MA4E2054 Series MA4E2054 Series Surface Mount Low Barrier X-Band Schottky Diodes Package Outlines Features • • • • • • • • • Low IR <100nA @ 1V, <500nA @ 3V Designed for High Volume, Low Cost Detector and Mixer

S11 SCHOTTKY diode

Abstract: MA4E2054B-287T MA4E2054-1141T MA4E2054 MA4E2054A-1146T MA4E2054A-287T MA4E2054B MA4E2054E-1068T MA4E2054D-287 Surface Mount RF Schottky Barrier Diodes
Contextual Info: MA4E2054 Series Surface Mount Low Barrier X-Band Schottky Diode Features • • • • • • • • • Package Outlines Low IR <100nA @ 1V, <500nA @ 3V Designed for High Volume, Low Cost Detector and Mixer Applications Low Noise Figure: 5.7 dB (SSB) at X-Band

Contextual Info: 5082-2759 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-X Test Freq10G Frequency Min. (Hz)1.0G Frequency Max. (Hz)15G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit

Contextual Info: 37bfl522 0013472 0^4 « P L S B Sü GEC PLESSEY SEMICONDUCTORS DC1553/57 SILICON SCHOTTKY X-BAND ZERO BIAS MICROSTRIP LID DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance

Contextual Info: P^piGEC PLESSEY DC1551/54/58 SILICON SCHOTTKY X-BAND ZERO BIAS WAVEGUIDE DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable lor applications requiring high performance detectors. These diodes can be supplied in matched pairs by the

Contextual Info: 37bô5 22 QQlfl4êO lfc>G « P L S B M GEC PIESSEY SEMICONDUCTORS DC1514/21/26 SILICON SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance

Contextual Info: 1N1610 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-X Test Freq7.7G Frequency Min. (Hz)3.0G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit15

Contextual Info: P B tiG E C plessey DC1514/21/26 SILICON SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance detectors. These diodes can be supplied in matched pairs by the