DIODE DMG3 Search Results

Contextual Info: DMG301NU 25V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features This new generation MOSFET is designed to minimize the on-state resistance RDS(ON and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Contextual Info: DMG301NU 25V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 25V 4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V ID TA = +25°C 0.26A 0.23A • Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed

Contextual Info: Product specification DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -30V 50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V • • • • • • ID TA = 25°C -3.7A -3.3A -2.7A Low Input Capacitance

Contextual Info: Product specification DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 50mΩ @ VGS = -10V -4.0A 72mΩ @ VGS = -4.5V -3.3A V(BR)DSS • • • • • • • -30V Low On-Resistance Low Input Capacitance Fast Switching Speed

Contextual Info: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A NEW PRODUCT -20V Low On-Resistance Low Input Capacitance

Contextual Info: DMG302PU 25V P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features ID TA = +25°C -0.17A -0.15A • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed Description • Small Surfaced Mount Package

g34 mosfet

Abstract: DMG3401LSN-7 marking G34
Contextual Info: DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -30V 50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V • • • • • • ID TA = 25°C -3.7A -3.3A -2.7A Low Input Capacitance Low On-Resistance Low Input/Output Leakage

Contextual Info: DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 50mΩ @ VGS = -10V -4.0A 72mΩ @ VGS = -4.5V -3.3A V(BR)DSS • • • • • • • -30V Description and Applications • • • Low On-Resistance Low Input Capacitance

Contextual Info: DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 50mΩ @ VGS = -10V -4.0A 72mΩ @ VGS = -4.5V -3.3A V(BR)DSS • • • • • • • -30V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

marking g33

Abstract: DMG3413L g33 sot23
Contextual Info: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 50mΩ @ VGS = -10V -4.0A 72mΩ @ VGS = -4.5V -3.3A V(BR)DSS • • • • • • • -30V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

marking G33

Contextual Info: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance  Low Input Capacitance 95mΩ @ VGS = -4.5V 3.0A  Fast Switching Speed 130mΩ @ VGS = -2.5V 2.5A  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

DMG3415U-13

Abstract: "marking code" 34P sot23 marking code YW DIODE marking 34P sot23
Contextual Info: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

marking 34P sot 23

Abstract: DMG3415U "marking code" 34P sot23 dmg3415u-7 J-STD-020D marking code 34P
Contextual Info: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 42.5mΩ @ VGS = -4.5V • 53mΩ @ VGS = -2.5V • 71mΩ @ VGS = -1.8V

Contextual Info: DMG3402L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features ID TA = +25°C 4A 3A 2A RDS ON V(BR)DSS 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V 30V • Low On-Resistance:  Low Gate Threshold Voltage  Low Input Capacitance

Contextual Info: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMG3420U N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)

marking 34P sot23

Contextual Info: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

DMG3420

Abstract: marking device g31 DMG3420U-7 DMG3420U g31 sot 23 SOT23 component marking code 5a N-CHANNEL MOSFET 30V 2A SOT-23 marking g31 sot23
Contextual Info: DMG3420U NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)

DMG3415UQ-7

Abstract: DMG3415U-7 DS31735 marking 34P sot23
Contextual Info: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

DMG3415U

Abstract: marking 34P sot 23 dmg3415u-7 YM 294 J-STD-020D
Contextual Info: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 39mΩ @ VGS = -4.5V • 52mΩ @ VGS = -2.5V • 65mΩ @ VGS = -1.8V

"marking code" 34P sot23

Abstract: marking 34P sot23
Contextual Info: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V Features • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching