DIODE DR 25 Search Results

Contextual Info: SKiiP 12NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper K<DR .< .<1Y K/DR -* P HG Q<M 45%7* 2&97'8:*7 *B7?: :76 -* P HG UVSW Q< -[ Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +

cree Sic

Abstract: schottky diode FIT 155C CSD04060 CSD06060 CSD10060
Contextual Info: SiC Power Diode Reliability SiC Schottky Diode Reliability October 2008 September 2007 SiC Power Diode Reliability October 2008 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers four years ago

CSD06060A

Abstract: cree Sic reliability cree 155C CSD10060A schottky diode FIT powerdio
Contextual Info: SiC Power Diode Reliability SiC Schottky Diode Reliability September 2006 March 2006 SiC Power Diode Reliability September 2006 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers three years ago

BAR66

Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
Contextual Info: Application Note No. 058 Silicon Discretes Dr. Reinhard Gabl Predicting Distortion in Pin-Diode Switches This note describes the origin of distortion in pin-diode switches. Distortion is related to physical parameters of the diode and operating conditions and thus can be minimized by an appropriate diode

powerex cd51

Contextual Info: fVWBZEX CD511225 CD511625 Powerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Diode POW-R-BLOK Modules 250 Amperes/1200-1600 Volts Description: ou’ i:ne dr««ino A: to ~ SP K1 •:> ifi? CD511225, CD511625 Dual Diode

dr25 diode specifications

Abstract: DR25 Diode OP 741 L6690 free download led wiring guide LLD1002E01
Contextual Info: INFRARED PULSED LASER DIODE L6690 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE Ta=25℃ (Ta=25℃) 100 RELATIVE RADIANT POWER (%) 2.5 ep 2.0 1.5 1.0 0.5 1.0 1.5 2.0 2.5 40 20 830 3.0 ●High duty ratio (DR≦2.5%)

453gb12e4s

Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Contextual Info: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1

Laser Diode for cutting

Contextual Info: INFRARED PULSED LASER DIODE L6690 PRELIMINARY DATA FEATURES High duty ratio DR 2.5 % High speed rise time (tr=0.5 ns typ.) APPLICATIONS Laser rader Range finder Excitation light source Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)

lateral junction semiconductor OLED

Abstract: oled flexible screen Indium tin oxide Indium tin oxide index oleds
Contextual Info: OLED Application Engineering Contact: Dr. Christoph Gärditz christoph.gaerditz@osram-os.com OLED Technology Introduction An organic light emitting diode (OLED) consists of several semiconducting organic layers sandwiched between two electrodes at least one of them being transparent. A simplified

DR1300

Abstract: FTD1300
Contextual Info: DIODE TRIO LUCAS TYPE Data Sheet Mechanical Dimensions Description DR-1300 Dimensions in inches and millimeters Features Mechanical Data ¬ Low forward voltage drop ¬ Case: OFC Heat Sink ¬ High current capability ¬ Encap: Epoxy Sealed Rated ¬ High reliability

DR-5V

Abstract: fld3c2pj Fujitsu FLD5F6CX FLD5F6CX fld3f fujitsu fld3f8lk FLD148G3NL FLD5F8 FLD3F6CX FLD5F*cx
Contextual Info: LIGHTWAVE COMPONENTS & MODULES LASER DIODE MODULES OPTICAL AND ELECTRICAL CHARACTERISTICS TL = 25°C or Tc = 25°C Part Number Ith (mA) Vf (V) CW CW (typ.) lF= Pf Pth (mW) (mW) CW (min.) CF=lth) CW at Pf V DR=5V - 0.2 - (•F=lop Vm=0) CW 'op(Pf) FLD148G3NL-B

mss60.341

Abstract: n10 diode N092 SCHOTTKY DIODE BRIDGE mss60 Diode DR 25 PCR46 dr 25 diode MSS25 MSS40
Contextual Info: Spice Models for Metelics Schottky Diodes 1 of 6 The standard diode model found in Spice Ver 2 does not correctly model the reverse bias characteristics of Metelics’ Schottky diodes. To correct this problem, use the macromodel shown below. DR Anode Cathode

Contextual Info: INFRARED PULSED LASER DIODE L6690-53 PRELIMINARY DATA FEATURES High speed rise time tr 2 ns typ. Output Power : 10 W (at DR=0.05 %) MTTF 20000hrs Compact APPLICATIONS Laser rader Range finder Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)

Contextual Info: INFRARED PULSED LASER DIODE L6690-53 PRELIMINARY DATA FEATURES High speed rise time tr 2 ns typ. Output Power : 10 W (at DR=0.05 %) MTTF 20000hrs Compact APPLICATIONS Laser rader Range finder Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)

zener spice model

Contextual Info: DE3S062D Spice Parameter Reference Total pages page 1 1 Device symbol Product name: DE3S062D Product type: Zener Diode 3 1 2 Parameters * cathode1 * | anode1, anode2 * | | cathode2 * | *$ .SUBCKT DE3S062D 1 3 2 D11 3 2 DF D12 2 p DR V1 p 3 0.002 D21 3 1 DF

Hitachi DSA002759

Contextual Info: 2SK3082 L ,2SK3082(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 10 A 40 A 10 A 10 A 8.5 mJ 30 W Drain peak current I D(pulse) Note1 Body-drain diode reverse drain current I DR

DS0352

Contextual Info: witches 40E D DAICO I N DU ST RIE S INC SbOH TS G 00015^7 & TOT IDAI T - s i - Volume 2 Issue 2 SP2TPin Diode Switch Model No. DS0352 OPERATING CHARACTERISTICS CU RR EN T DR AI N 15 25 TYPICAL PERFORMANCE mA A T +5 VDC SUPPLY INTE RC EP T POINT, 2ND +72 d 8m

DZ2J100

Contextual Info: DZ2J100 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DZ2J100 Product type: Zener Diode Parameters *DEVICE=DZ2J100,D * DZ2J100 D model *$ .SUBCKT DZ2J100 A K D1 A K DF DZ K 1 DR V1 1 A 0.01 .MODEL DF D + IS=1.1985E-15 + N=1.025

DZ2S068

Abstract: DZ2S Diode DR 25
Contextual Info: DZ2S068 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DZ2S068 Product type: Zener Diode Parameters *DEVICE=DZ2S068,D * DZ2S068 D model *$ .SUBCKT DZ2S068 A K D1 A K DF DZ K 1 DR V1 1 A 0.002 .MODEL DF D + IS=1.3073E-15 + N=1.0628

Contextual Info: FEATURES • 0.5 dB Insertion Loss ■ TTL Driver DPDT MODEL NO. dr ■ 2 0 - 7 0 0 MHz DS0519 PIN Diode DPDT ■ Small TO-8 Package ■ Low Cost ■ Cascadable Building Block For Attenuators And Phase Shifters TEST CONFIGURATION Y EXTERNAL BLOCKING CAPACITORS REQUIRED

Contextual Info: STV7617D STV7617U PLASMA D SPLAY PANEL SCAN DR VER PRELIM IN ARY DATA • 64/65 SELECTABLE OUTPUT PLASMA DIS­ PLAYDRIVER ■ 100V ABSOLUTE MAXIMUM SUPPLY ■ 5V SUPPLY FOR LOGIC ■ 100/700mASOURCE/SINK OUTPUT ■ 700mASOURCE/SINK OUTPUT DIODE ■ 65-BIT BIDIRECTIONAL SHIFT REGISTER

DZ2J082

Abstract: N1055 DZ2J RS01 n159
Contextual Info: DZ2J082 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DZ2J082 Product type: Zener Diode Parameters *DEVICE=DZ2J082,D * DZ2J082 D model *$ .SUBCKT DZ2J082 A K D1 A K DF DZ K 1 DR V1 1 A 0.002 .MODEL DF D + IS=2.2005E-15 + N=1.0557

DZ2J030

Abstract: dr 25 diode
Contextual Info: DZ2J030 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DZ2J030 Product type: Zener Diode Parameters *DEVICE=DZ2J030,D * DZ2J030 D model *$ .SUBCKT DZ2J030 A K D1 A K DF DZ K 1 DR V1 1 A 0.002 .MODEL DF D + IS=1.2641E-15 + N=1.0575

Contextual Info: y a .y h dr/s: lj K Surface Mounting^Deviœ Schottky Barrier Diode Twin Diode •W fêvhÆ E ] DF30PC3M OUTLINE DIMENSIONS Case : STO-220 30V 30A •S M D • ¡B ffiV F = 0 .4 V m ffl i î • A '> x U - i ï S K ± • D C tÜ ^ O R ffl • D C / D C n v A — 5>